| Structure and transport in high pressure oxygen sputter-deposited BaSnO3− δ K Ganguly, P Ambwani, P Xu, JS Jeong, KA Mkhoyan, C Leighton, ... APL materials 3 (6), 2015 | 98 | 2015 |
| Stabilization of intrinsic defects at high temperatures in ZnO nanoparticles by Ag modification RK Sahu, K Ganguly, T Mishra, M Mishra, RS Ningthoujam, SK Roy, ... Journal of colloid and interface science, 2011 | 91 | 2011 |
| Mobility-electron density relation probed via controlled oxygen vacancy doping in epitaxial BaSnO3 K Ganguly, A Prakash, B Jalan, C Leighton APL Materials 5 (5), 2017 | 69 | 2017 |
| Critical thickness and strain relaxation in molecular beam epitaxy-grown SrTiO3 films T Wang, K Ganguly, P Marshall, P Xu, B Jalan Applied Physics Letters 103 (21), 2013 | 63 | 2013 |
| Wide-voltage-window reversible control of electronic transport in electrolyte-gated epitaxial H Wang, J Walter, K Ganguly, B Yu, G Yu, Z Zhang, H Zhou, H Fu, ... Physical Review Materials 3 (7), 075001, 2019 | 31 | 2019 |
| Microstructure characterization of BaSnO3 thin films on LaAlO3 and PrScO3 substrates from transmission electron microscopy H Yun, K Ganguly, W Postiglione, B Jalan, C Leighton, KA Mkhoyan, ... Scientific reports 8 (1), 10245, 2018 | 24 | 2018 |
| Electronic structure of BaSnO3 investigated by high-energy-resolution electron energy-loss spectroscopy and ab initio calculations H Yun, M Topsakal, A Prakash, K Ganguly, C Leighton, B Jalan, ... Journal of Vacuum Science & Technology A 36 (3), 2018 | 20 | 2018 |
| Scattering mechanisms and mobility enhancement in epitaxial BaSnO3 thin films probed via electrolyte gating H Wang, A Prakash, K Reich, K Ganguly, B Jalan, C Leighton APL Materials 8 (7), 2020 | 17 | 2020 |
| Opportunities in 3-D stacked CMOS transistors M Radosavljević, CY Huang, W Rachmady, SH Seung, NK Thomas, ... 2021 IEEE International Electron Devices Meeting (IEDM), 34.1. 1-34.1. 4, 2021 | 13 | 2021 |
| Contact resistance reduction in transistor devices with metallization on both sides K Ganguly, R Keech, S Rafique, GA Glass, AS Murthy, E Mannebach, ... US Patent App. 16/911,771, 2021 | 12 | 2021 |
| Structure-property relationships and mobility optimization in sputtered La-doped films: Toward mobility WM Postiglione, K Ganguly, H Yun, JS Jeong, A Jacobson, L Borgeson, ... Physical Review Materials 5 (4), 044604, 2021 | 12 | 2021 |
| Rubrene Single-Crystal Transistors with Perfluoropolyether Liquid Dielectric: Exploiting Free Dipoles to Induce Charge Carriers at Organic Surfaces X Ren, E Schmidt, J Walter, K Ganguly, C Leighton, CD Frisbie The Journal of Physical Chemistry C 121 (12), 6540-6545, 2017 | 9 | 2017 |
| Three-dimensional integrated circuits (3DICs) including bottom gate MOS transistors with monocrystalline channel material CY Huang, G Dewey, A Agrawal, K Jun, W Rachmady, Z Geiger, ... US Patent 11,244,943, 2022 | 2 | 2022 |
| Gate-all-around integrated circuit structures having strained dual nanoribbon channel structures A Agrawal, B Mueller, JT Kavalieros, J Torres, K Jun, S Chouksey, ... US Patent App. 16/913,333, 2021 | 2 | 2021 |
| Gate-all-around integrated circuit structures having strained source or drain structures on insulator A Agrawal, AS Murthy, C Bomberger, JT Kavalieros, K Ganguly, R Keech, ... US Patent App. 16/912,127, 2021 | 2 | 2021 |
| Uncovering the microstructure of BaSnCb thin films deposited on different substrates using TEM H Yun, K Ganguly, W Postiglione, B Jalan, C Leighton, KA Mkhoyan, ... Microscopy and Microanalysis 24 (S1), 2198-2199, 2018 | 2 | 2018 |
| Gate-all-around integrated circuit structures having strained source or drain structures on gate dielectric layer A Agrawal, AS Murthy, JT Kavalieros, K Ganguly, R Keech, S Chouksey, ... US Patent App. 16/912,136, 2021 | 1 | 2021 |
| Structure and transport in epitaxial BaSnO3: doping, mobility and the insulator-metal transition K Ganguly University of Minnesota, 2018 | 1 | 2018 |
| Study of Strain and Intermixing at the BaSnO3/SrTiO3and BaSnO3/LaAlO3Interfaces Using STEM and EELS H Yun, K Ganguly, A Prakash, C Leighton, B Jalan, KA Mkhoyan, ... Microscopy and Microanalysis 22 (S3), 320-321, 2016 | 1 | 2016 |
| Three-dimensional integrated circuits (3DICs) including bottom gate MOS transistors with monocrystalline channel material CY Huang, G Dewey, A Agrawal, K Jun, W Rachmady, Z Geiger, ... US Patent 11,996,404, 2024 | | 2024 |
Jong Seok JeongLG Chem Ltd在 lgchem.com 的电子邮件经过验证
