| Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing BH Lee, L Kang, R Nieh, WJ Qi, JC Lee Applied Physics Letters 76 (14), 1926-1928, 2000 | 782 | 2000 |
| Atomristor: nonvolatile resistance switching in atomic sheets of transition metal dichalcogenides R Ge, X Wu, M Kim, J Shi, S Sonde, L Tao, Y Zhang, JC Lee, ... Nano letters 18 (1), 434-441, 2018 | 508 | 2018 |
| Modeling and characterization of gate oxide reliability JC Lee, C Ih-Chin, H Chenming IEEE Transactions on Electron Devices 35 (12), 2268-2278, 1988 | 421 | 1988 |
| A silicon-based photocathode for water reduction with an epitaxial SrTiO3 protection layer and a nanostructured catalyst L Ji, MD McDaniel, S Wang, AB Posadas, X Li, H Huang, JC Lee, ... Nature nanotechnology 10 (1), 84-90, 2015 | 419 | 2015 |
| Ultrathin hafnium oxide with low leakage and excellent reliability for alternative gate dielectric application BH Lee, L Kang, WJ Qi, R Nieh, Y Jeon, K Onishi, JC Lee International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999 | 403 | 1999 |
| Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric L Kang, BH Lee, WJ Qi, Y Jeon, R Nieh, S Gopalan, K Onishi, JC Lee IEEE Electron Device Letters 21 (4), 181-183, 2000 | 341 | 2000 |
| Electrical and spectroscopic comparison of HfO2/Si interfaces on nitrided and un-nitrided Si (100) PD Kirsch, CS Kang, J Lozano, JC Lee, JG Ekerdt Journal of applied Physics 91 (7), 4353-4363, 2002 | 316 | 2002 |
| Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2O H Hwang, W Ting, B Maiti, DL Kwong, J Lee Applied physics letters 57 (10), 1010-1011, 1990 | 271 | 1990 |
| MOSCAP and MOSFET characteristics using ZrO/sub 2/gate dielectric deposited directly on Si WJ Qi, R Nieh, BH Lee, L Kang, Y Jeon, K Onishi, T Ngai, S Banerjee, ... International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999 | 259 | 1999 |
| Electrical and reliability characteristics of ZrO2 deposited directly on Si for gate dielectric application WJ Qi, R Nieh, BH Lee, L Kang, Y Jeon, JC Lee Applied Physics Letters 77 (20), 3269-3271, 2000 | 241 | 2000 |
| Thinnest nonvolatile memory based on monolayer h‐BN X Wu, R Ge, PA Chen, H Chou, Z Zhang, Y Zhang, S Banerjee, ... Advanced Materials 31 (15), 1806790, 2019 | 240 | 2019 |
| Bonding states and electrical properties of ultrathin gate dielectrics CS Kang, HJ Cho, K Onishi, R Nieh, R Choi, S Gopalan, S Krishnan, ... Applied Physics Letters 81 (14), 2593-2595, 2002 | 207 | 2002 |
| Spectroscopic ellipsometry characterization of high-k dielectric thin films and the high-temperature annealing effects on their optical properties YJ Cho, NV Nguyen, CA Richter, JR Ehrstein, BH Lee, JC Lee Applied physics letters 80 (7), 1249-1251, 2002 | 202 | 2002 |
| Effects of interfacial layer growth on the electrical characteristics of thin titanium oxide films on silicon BH Lee, Y Jeon, K Zawadzki, WJ Qi, J Lee Applied physics letters 74 (21), 3143-3145, 1999 | 193 | 1999 |
| Zero-static power radio-frequency switches based on MoS2 atomristors M Kim, R Ge, X Wu, X Lan, J Tice, JC Lee, D Akinwande Nature communications 9 (1), 2524, 2018 | 187 | 2018 |
| Temperature acceleration of time-dependent dielectric breakdown R Moazzami, JC Lee, C Hu IEEE Transactions on Electron Devices 36 (11), 2462-2465, 1989 | 174 | 1989 |
| Bias-temperature instabilities of polysilicon gate HfO/sub 2/MOSFETs K Onishi, R Choi, CS Kang, HJ Cho, YH Kim, RE Nieh, J Han, ... IEEE Transactions on Electron Devices 50 (6), 1517-1524, 2003 | 168 | 2003 |
| A model for electrical conduction in metal‐ferroelectric‐metal thin‐film capacitors C Sudhama, AC Campbell, PD Maniar, RE Jones, R Moazzami, ... Journal of applied physics 75 (2), 1014-1022, 1994 | 163 | 1994 |
| Ultrathin zirconium silicate film with good thermal stability for alternative gate dielectric application WJ Qi, R Nieh, E Dharmarajan, BH Lee, Y Jeon, L Kang, K Onishi, JC Lee Applied Physics Letters 77 (11), 1704-1706, 2000 | 156 | 2000 |
| MOSFET devices with polysilicon on single-layer HfO/sub 2/high-K dielectrics L Kang, K Onishi, Y Jeon, BH Lee, C Kang, WJ Qi, R Nieh, S Gopalan, ... International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000 | 153 | 2000 |
Deji AkinwandeThe University of Texas at Austin, IEEE, MRS, APS, AAS Fellow在 ece.utexas.edu 的电子邮件经过验证
