| Recent advances in GaN‐based power HEMT devices J He, WC Cheng, Q Wang, K Cheng, H Yu, Y Chai Advanced electronic materials 7 (4), 2001045, 2021 | 118 | 2021 |
| High Internal Quantum Efficiency of Nonpolar a-Plane AlGaN-Based Multiple Quantum Wells Grown on r-Plane Sapphire Substrate J Zhao, X Zhang, J He, S Chen, Z Wu, A Fan, Q Dai, ZC Feng, Y Cui ACS Photonics 5 (5), 1903-1906, 2018 | 36 | 2018 |
| Normally-OFF AlGaN/GaN MIS-HEMTs With Low RON and Vth Hysteresis by Functioning In-situ SiNx in Regrowth Process J He, Q Wang, G Zhou, W Li, Y Jiang, Z Qiao, C Tang, G Li, H Yu IEEE Electron Device Letters 43 (4), 529-532, 2022 | 22 | 2022 |
| Reduction in crystalline quality anisotropy and strain for non-polar a-plane GaN epi-layers with nano-scale island-like SiNx interlayer J Zhao, X Zhang, Z Wu, Q Dai, N Wang, J He, S Chen, ZC Feng, Y Cui Journal of Alloys and Compounds 729, 992-996, 2017 | 13 | 2017 |
| Ohmic Contact With a Contact Resistivity of 12 Ω ⋅ mm on p-GaN/AlGaN/GaN CY Tang, HH Lu, ZP Qiao, Y Jiang, FZ Du, JQ He, YL Jiang, Q Wang, ... IEEE Electron Device Letters 43 (9), 1412-1415, 2022 | 11 | 2022 |
| Study of NH3 flow duty-ratio in pulsed-flow epitaxial growth of non-polar a-plane Al0. 34Ga0. 66N films J He, X Zhang, J Zhao, S Chen, Z Wu, A Fan, Y Zhu, M Wang, ZC Feng, ... Materials Science in Semiconductor Processing 90, 219-224, 2019 | 11 | 2019 |
| High quality non-polar a-plane AlN template grown on semi-polar r-plane sapphire substrate by three-step pulsed flow growth method S Chen, X Zhang, S Wang, A Fan, J He, C Li, L Lu, L Rao, Z Zhuang, G Hu, ... Journal of Alloys and Compounds 872, 159706, 2021 | 10 | 2021 |
| Study of dual nitridation processes in growth of non-polar a-plane AlGaN epi-layers J Zhao, X Zhang, S Chen, J He, A Fan, Z Wu, S Wang, Y Liu, J Feng, ... Materials Letters 227, 108-111, 2018 | 10 | 2018 |
| Distinguishing various influences on the electrical properties of thin-barrier AlGaN/GaN heterojunctions with in-situ SiNx caps J He, WC Cheng, Y Jiang, M Fan, G Zhou, G Yang, L Jiang, X Wang, Z Wu, ... Materials Science in Semiconductor Processing 132, 105907, 2021 | 9 | 2021 |
| Atomic layer etching technique for InAlN/GaN heterostructure with AlN etch-stop layer F Du, Y Jiang, Z Qiao, Z Wu, C Tang, J He, G Zhou, WC Cheng, X Tang, ... Materials Science in Semiconductor Processing 143, 106544, 2022 | 8 | 2022 |
| Effects of an in-situ SiNx interlayer on structural and optical properties for nonpolar a-plane GaN epilayers J Zhao, X Zhang, A Fan, S Chen, J He, J Pan, D Chen, M Tian, ZC Feng, ... Japanese Journal of Applied Physics 59 (1), 010909, 2020 | 7 | 2020 |
| Low trap density of oxygen-rich HfO2/GaN interface for GaN MIS-HEMT applications WC Cheng, J He, M He, Z Qiao, Y Jiang, F Du, X Wang, H Hong, Q Wang, ... Journal of Vacuum Science & Technology B 40 (2), 2022 | 6 | 2022 |
| Carrier transport mechanism of Mg/Pt/Au Ohmic contact on p-GaN/AlGaN/GaN platform with ultra-low resistivity C Tang, C Fu, Y Jiang, M He, C Deng, K Wen, J He, P Wang, F Du, ... Applied Physics Letters 123 (9), 2023 | 4 | 2023 |
| Achievement of polarity reversion from Al (Ga)-polar to N-polar for AlGaN film on AlN seeding layer grown by a novel flow‐modulation technology J Zhang, X Zhang, A Fan, S Chen, J He, A Nasir, Z Zhuang, J Lyu, G Hu, ... Journal of Materials Science: Materials in Electronics 32, 7858-7866, 2021 | 4 | 2021 |
| The Atomic Layer Etching Technique with Surface Treatment Function for InAlN/GaN Heterostructure F Du, Y Jiang, Z Wu, H Lu, J He, C Tang, Q Hu, K Wen, X Tang, H Hong, ... Crystals 12 (5), 722, 2022 | 3 | 2022 |
| Study of bilayer Al2O3/in-situ SiNx dielectric stacks for gate modulation in ultrathin-barrier AlGaN/GaN MIS-HEMTs J He, WC Cheng, Y Jiang, Q Wang, H Yu 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2021 | 3 | 2021 |
| Interface charge engineering on an in situ SiNx/AlGaN/GaN platform for normally off GaN MIS-HEMTs with improved breakdown performance JQ He, KY Wen, PR Wang, MH He, FZ Du, Y Jiang, CY Tang, N Tao, ... Applied Physics Letters 123 (10), 2023 | 2 | 2023 |
| Study of electrical and structural properties of non-polar a-plane p-AlGaN epi-layers with various Al compositions A Fan, X Zhang, S Wang, C Li, S Chen, Z Zhuang, J He, G Hu, Y Cui Journal of Alloys and Compounds 867, 159086, 2021 | 2 | 2021 |
| Improved optical and structural properties of nonpolar a-plane AlGaN epi-layers after Cp2Mg and NH3 treatments J Zhao, X Zhang, J He, A Fan, S Chen, Z Wu, Y Zhu, M Wang, ZC Feng, ... Optical Materials Express 8 (9), 2586-2591, 2018 | 2 | 2018 |
| Epitaxial growth of semi-polar (11–22) plane AlInGaN quaternary alloys on m-plane (10-10) sapphire substrates L Rao, X Zhang, A Fan, S Chen, C Li, J He, Z Zhuang, J Lyu, G Hu, Y Cui Materials Science in Semiconductor Processing 126, 105660, 2021 | 1 | 2021 |
Wei-Chih ChengThe Hong Kong University of Science and Technology在 connect.ust.hk 的电子邮件经过验证
Wei-Chih ChengThe Hong Kong University of Science and Technology在 connect.ust.hk 的电子邮件经过验证
Jianguo ZhaoNUIST在 nuist.edu.cn 的电子邮件经过验证