| A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction S Ikeda, K Miura, H Yamamoto, K Mizunuma, HD Gan, M Endo, S Kanai, ... Nature materials 9 (9), 721-724, 2010 | 4015 | 2010 |
| Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕ MgO∕ CoFeB pseudo-spin-valves annealed at high temperature S Ikeda, J Hayakawa, Y Ashizawa, YM Lee, K Miura, H Hasegawa, ... Applied Physics Letters 93 (8), 2008 | 1948 | 2008 |
| Magnetic tunnel junctions for spintronic memories and beyond S Ikeda, J Hayakawa, YM Lee, F Matsukura, Y Ohno, T Hanyu, H Ohno IEEE Transactions on Electron Devices 54 (5), 991-1002, 2007 | 636 | 2007 |
| Electric-field effects on thickness dependent magnetic anisotropy of sputtered MgO/Co40Fe40B20/Ta structures M Endo, S Kanai, S Ikeda, F Matsukura, H Ohno Applied Physics Letters 96 (21), 2010 | 614 | 2010 |
| Effect of electrode composition on the tunnel magnetoresistance of pseudo-spin-valve magnetic tunnel junction with a MgO tunnel barrier YM Lee, J Hayakawa, S Ikeda, F Matsukura, H Ohno Applied physics letters 90 (21), 2007 | 476 | 2007 |
| Fabrication of a nonvolatile full adder based on logic-in-memory architecture using magnetic tunnel junctions S Matsunaga, J Hayakawa, S Ikeda, K Miura, H Hasegawa, T Endoh, ... Applied Physics Express 1 (9), 091301, 2008 | 462 | 2008 |
| Electric field-induced magnetization reversal in a perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction S Kanai, M Yamanouchi, S Ikeda, Y Nakatani, F Matsukura, H Ohno Applied Physics Letters 101 (12), 2012 | 440 | 2012 |
| Dependence of giant tunnel magnetoresistance of sputtered CoFeB/MgO/CoFeB magnetic tunnel junctions on MgO barrier thickness and annealing temperature J Hayakawa, S Ikeda, F Matsukura, H Takahashi, H Ohno Japanese Journal of Applied Physics 44 (4L), L587, 2005 | 352 | 2005 |
| Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure H Sato, M Yamanouchi, S Ikeda, S Fukami, F Matsukura, H Ohno Applied Physics Letters 101 (2), 2012 | 346 | 2012 |
| Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB∕ MgO∕ CoFeB magnetic tunnel junctions J Hayakawa, S Ikeda, YM Lee, F Matsukura, H Ohno Applied Physics Letters 89 (23), 2006 | 314 | 2006 |
| Properties of magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure down to junction diameter of 11 nm H Sato, ECI Enobio, M Yamanouchi, S Ikeda, S Fukami, S Kanai, ... Applied Physics Letters 105 (6), 2014 | 311 | 2014 |
| 2Mb spin-transfer torque RAM (SPRAM) with bit-by-bit bidirectional current write and parallelizing-direction current read T Kawahara, R Takemura, K Miura, J Hayakawa, S Ikeda, Y Lee, R Sasaki, ... 2007 IEEE International Solid-State Circuits Conference. Digest of Technical …, 2007 | 308 | 2007 |
| Single-shot time-resolved measurements of nanosecond-scale spin-transfer induced switching: Stochastic versus deterministic aspects T Devolder, J Hayakawa, K Ito, H Takahashi, S Ikeda, P Crozat, ... Physical review letters 100 (5), 057206, 2008 | 285 | 2008 |
| 2 Mb SPRAM (SPin-transfer torque RAM) with bit-by-bit bi-directional current write and parallelizing-direction current read T Kawahara, R Takemura, K Miura, J Hayakawa, S Ikeda, YM Lee, ... IEEE Journal of Solid-State Circuits 43 (1), 109-120, 2008 | 276 | 2008 |
| Current-driven magnetization switching in CoFeB/MgO/CoFeB magnetic tunnel junctions J Hayakawa, S Ikeda, YM Lee, R Sasaki, T Meguro, F Matsukura, ... Japanese Journal of Applied Physics 44 (9L), L1267, 2005 | 267 | 2005 |
| Giant tunnel magnetoresistance and high annealing stability in CoFeB∕ MgO∕ CoFeB magnetic tunnel junctions with synthetic pinned layer YM Lee, J Hayakawa, S Ikeda, F Matsukura, H Ohno Applied Physics Letters 89 (4), 2006 | 249 | 2006 |
| Current-induced effective field in perpendicularly magnetized Ta/CoFeB/MgO wire T Suzuki, S Fukami, N Ishiwata, M Yamanouchi, S Ikeda, N Kasai, H Ohno Applied Physics Letters 98 (14), 2011 | 207 | 2011 |
| Current-induced magnetization switching in MgO barrier based magnetic tunnel junctions with CoFeB/Ru/CoFeB synthetic ferrimagnetic free layer J Hayakawa, S Ikeda, YM Lee, R Sasaki, T Meguro, F Matsukura, ... Japanese journal of applied physics 45 (10L), L1057, 2006 | 190 | 2006 |
| Junction size effect on switching current and thermal stability in CoFeB/MgO perpendicular magnetic tunnel junctions H Sato, M Yamanouchi, K Miura, S Ikeda, HD Gan, K Mizunuma, ... Applied Physics Letters 99 (4), 2011 | 188 | 2011 |
| An overview of nonvolatile emerging memories—Spintronics for working memories T Endoh, H Koike, S Ikeda, T Hanyu, H Ohno IEEE journal on emerging and selected topics in circuits and systems 6 (2 …, 2016 | 186 | 2016 |
