| CVD growth of high-quality and large-area continuous h-BN thin films directly on stainless-steel as protective coatings S Jia, W Chen, J Zhang, CY Lin, H Guo, G Lu, K Li, T Zhai, Q Ai, J Lou Materials Today Nano 16, 100135, 2021 | 19 | 2021 |
| 3-D full-band Monte Carlo simulation of hot-electron energy distributions in gate-all-around Si nanowire MOSFETs M Reaz, AM Tonigan, K Li, MB Smith, MW Rony, M Gorchichko, A O’Hara, ... IEEE Transactions on Electron Devices 68 (5), 2556-2563, 2021 | 16 | 2021 |
| Aging effects and latent interface-trap buildup in MOS transistors J Ding, EX Zhang, K Li, X Luo, M Gorchichko, DM Fleetwood IEEE Transactions on Nuclear Science 68 (12), 2724-2735, 2021 | 13 | 2021 |
| Impacts of through-silicon vias on total-ionizing-dose effects and low-frequency noise in FinFETs K Li, EX Zhang, M Gorchichko, PF Wang, M Reaz, SE Zhao, G Hiblot, ... IEEE Transactions on Nuclear Science 68 (5), 740-747, 2021 | 13 | 2021 |
| Laser-induced single-event transients in black phosphorus MOSFETs C Liang, R Ma, K Li, Y Su, H Gong, KL Ryder, P Wang, AL Sternberg, ... IEEE Transactions on Nuclear Science 66 (1), 384-388, 2018 | 11 | 2018 |
| Total-ionizing-dose response of SiGe HBTs at elevated temperatures D Nergui, JW Teng, M Hosseinzadeh, Y Mensah, K Li, M Gorchichko, ... IEEE Transactions on Nuclear Science 69 (5), 1079-1084, 2022 | 8 | 2022 |
| Negative bias-temperature instabilities and low-frequency noise in Ge FinFETs X Luo, EX Zhang, PF Wang, K Li, D Linten, J Mitard, RA Reed, ... IEEE Transactions on Device and Materials Reliability 23 (1), 153-161, 2023 | 5 | 2023 |
| Single-event-induced charge collection in Ge-channel pMOS FinFETs MW Rony, IK Samsel, EX Zhang, A Sternberg, K Li, M Reaz, SM Austin, ... IEEE Transactions on Nuclear Science 68 (5), 807-814, 2021 | 5 | 2021 |
| Total-ionizing-dose effects in IGZO thin-film transistors Z Guo, K Li, X Li, X Luo, EX Zhang, RA Reed, RD Schrimpf, ... IEEE Transactions on Nuclear Science 70 (8), 2002-2007, 2023 | 4 | 2023 |
| Low-frequency and random telegraph noise in 14-nm bulk si charge-trap transistors M Gorchichko, EX Zhang, M Reaz, K Li, PF Wang, J Cao, RM Brewer, ... IEEE Transactions on Electron Devices 70 (6), 3215-3222, 2023 | 4 | 2023 |
| Negative-bias-stress and total-ionizing-dose effects in deeply scaled Ge-GAA nanowire pFETs MW Rony, EX Zhang, S Toguchi, X Luo, M Reaz, K Li, D Linten, J Mitard, ... IEEE Transactions on Nuclear Science 69 (3), 299-306, 2022 | 4 | 2022 |
| Low-Frequency Noise and Border Traps in Irradiated nMOS and pMOS Bulk Si FinFETs With SiO2/HfO2 Gate Dielectrics K Li, X Luo, MW Rony, M Gorchichko, G Hiblot, S Van Huylenbroeck, ... IEEE Transactions on Nuclear Science 70 (4), 442-448, 2023 | 3 | 2023 |
| Response of Integrated Silicon Microwave pin Diodes to X-Ray and Fast-Neutron Irradiation JW Teng, D Nergui, H Parameswaran, NE Sepúlveda-Ramos, ... IEEE Transactions on Nuclear Science 69 (3), 282-289, 2021 | 2 | 2021 |
| A system-level modeling approach for simulating radiation effects in successive-approximation analog-to-digital converters MW Rony, EX Zhang, M Reaz, K Li, A Daniel, B Rax, P Adell, J Kauppila, ... IEEE Transactions on Nuclear Science 68 (7), 1465-1472, 2021 | 2 | 2021 |
| Pulsed laser-induced single-event transients in InGaAs FinFETs with sub-10-nm fin widths K Li, EX Zhang, S Bonaldo, AL Sternberg, JA Kozub, AM Tonigan, M Reaz, ... 2019 19th European Conference on Radiation and Its Effects on Components and …, 2019 | 2 | 2019 |
| RF Performance and TID Hardness Trade-offs in Annular 45-nm RF SOI CMOS Devices. B Ringel, J Teng, D Nergui, Z Brumbach, M Hosseinzadeh, K Li, ... Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2022 | 1 | 2022 |
| The Impact of Scaling on the Effects of Mixed-Mode Electrical Stress and Ionizing Radiation for 130-nm and 90-nm SiGe HBTs D Nergui, M Hosseinzadeh, YA Mensah, HP Lee, DG Sam, K Li, ... 2024 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2024 | | 2024 |
| Simulation study of total ionizing dose effect of gamma radiation on 15 nm bulk FinFET JQ Fan, TH Hou, Q Zhao, F Zhang, K Li, J Fang, JH Hao, ZW Dong Journal of Instrumentation 18 (10), P10027, 2023 | | 2023 |
| Laser-Induced Single-Event Effects, Total-Ionizing-Dose Effects, and Low-Frequency Noise in Advanced FinFets K Li Vanderbilt University, 2022 | | 2022 |
| Unified Mechanism for Graphene FET's Electrothermal Breakdown and Its Implications on Safe Operating Limits M Reaz, AM Tonigan, K Li, MB Smith, MW Rony, M Gorchichko, A O'Hara, ... IEEE TRANSACTIONS ON ELECTRON DEVICES 68 (5), 2556-2563, 2021 | | 2021 |
