| Insulated gate and surface passivation structures for GaN-based power transistors Z Yatabe, JT Asubar, T Hashizume Journal of Physics D: Applied Physics 49 (39), 393001, 2016 | 226 | 2016 |
| Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors Y Hori, Z Yatabe, T Hashizume Journal of Applied Physics 114 (24), 2013 | 188 | 2013 |
| State of the art on gate insulation and surface passivation for GaN-based power HEMTs T Hashizume, K Nishiguchi, S Kaneki, J Kuzmik, Z Yatabe Materials science in semiconductor processing 78, 85-95, 2018 | 139 | 2018 |
| Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates S Kaneki, J Ohira, S Toiya, Z Yatabe, JT Asubar, T Hashizume Applied physics letters 109 (16), 2016 | 96 | 2016 |
| Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors Z Yatabe, Y Hori, WC Ma, JT Asubar, M Akazawa, T Sato, T Hashizume Japanese Journal of Applied Physics 53 (10), 100213, 2014 | 87 | 2014 |
| Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation JT Asubar, Z Yatabe, D Gregusova, T Hashizume Journal of Applied Physics 129 (12), 2021 | 75 | 2021 |
| On the origin of interface states at oxide/III-nitride heterojunction interfaces M Matys, B Adamowicz, A Domanowska, A Michalewicz, R Stoklas, ... Journal of Applied Physics 120 (22), 2016 | 48 | 2016 |
| Reduced thermal resistance in AlGaN/GaN multi-mesa-channel high electron mobility transistors JT Asubar, Z Yatabe, T Hashizume Applied Physics Letters 105 (5), 2014 | 36 | 2014 |
| Current Collapse Reduction in AlGaN/GaN HEMTs by High-Pressure Water Vapor Annealing JT Asubar, Y Kobayashi, K Yoshitsugu, Z Yatabe, H Tokuda, M Horita, ... IEEE Transactions on Electron Devices 62 (8), 2423-2428, 2015 | 33 | 2015 |
| Effects of Cl2-Based Inductively Coupled Plasma Etching of AlGaN on Interface Properties of Al2O3/AlGaN/GaN Heterostructures Z Yatabe, Y Hori, S Kim, T Hashizume Applied Physics Express 6 (1), 016502, 2012 | 30 | 2012 |
| Image analysis of thickness in flowing soap films. I: effects of polymer R Hidema, Z Yatabe, M Shoji, C Hashimoto, R Pansu, G Sagarzazu, ... Experiments in fluids 49, 725-732, 2010 | 25 | 2010 |
| Impact of oxygen plasma treatment on the dynamic on-resistance of AlGaN/GaN high-electron-mobility transistors JT Asubar, Y Sakaida, S Yoshida, Z Yatabe, H Tokuda, T Hashizume, ... Applied Physics Express 8 (11), 111001, 2015 | 23 | 2015 |
| Interface trap states in Al2O3/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces Z Yatabe, JT Asubar, T Sato, T Hashizume physica status solidi (a) 212 (5), 1075-1080, 2015 | 22 | 2015 |
| Fluorescence lifetime imaging microscopy for in situ observation of the nanocrystallization of rubrene in a microfluidic set-up S Desportes, Z Yatabe, S Baumlin, V Génot, JP Lefèvre, H Ushiki, ... Chemical Physics Letters 446 (1), 212-216, 2007 | 22 | 2007 |
| Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 by atomic layer deposition: leakage current and … R Stoklas, D Gregušová, M Blaho, K Fröhlich, J Novák, M Matys, Z Yatabe, ... Semiconductor Science and Technology 32 (4), 045018, 2017 | 20 | 2017 |
| Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures M Matys, R Stoklas, J Kuzmik, B Adamowicz, Z Yatabe, T Hashizume Journal of Applied Physics 119 (20), 2016 | 20 | 2016 |
| Characterization of Low-Frequency Noise in Etched GaAs Nanowire Field-Effect Transistors Having SiNx Gate Insulator T Muramatsu, K Miura, Y Shiratori, Z Yatabe, S Kasai Japanese Journal of Applied Physics 51 (6), 2012 | 19 | 2012 |
| Single crystalline SnO2 thin films grown on m ‐plane sapphire substrate by mist chemical vapor deposition Z Yatabe, T Tsuda, J Matsushita, T Sato, T Otabe, K Sue, S Nagaoka, ... physica status solidi c 14 (1-2), 1600148, 2017 | 17 | 2017 |
| Improvement of m‐plane ZnO films formed on buffer layers on sapphire substrates by mist chemical vapor deposition H Tanoue, M Takenouchi, T Yamashita, S Wada, Z Yatabe, S Nagaoka, ... physica status solidi (a) 214 (3), 1600603, 2017 | 16 | 2017 |
| Large photocurrents in GaN porous structures with a redshift of the photoabsorption edge T Sato, Y Kumazaki, H Kida, A Watanabe, Z Yatabe, S Matsuda Semiconductor Science and Technology 31 (1), 014012, 2015 | 16 | 2015 |
Joel T. AsubarAssociate Professor, University of Fukui, IEEE senior member在 u-fukui.ac.jp 的电子邮件经过验证
