Fully memristive neural networks for pattern classification with unsupervised learning Z Wang, S Joshi, S Savel’Ev, W Song, R Midya, Y Li, M Rao, P Yan, ... Nature Electronics 1 (2), 137-145, 2018 | 961 | 2018 |
A review of three‐dimensional resistive switching cross‐bar array memories from the integration and materials property points of view JY Seok, SJ Song, JH Yoon, KJ Yoon, TH Park, DE Kwon, H Lim, GH Kim, ... Advanced Functional Materials 24 (34), 5316-5339, 2014 | 400 | 2014 |
An artificial nociceptor based on a diffusive memristor JH Yoon, Z Wang, KM Kim, H Wu, V Ravichandran, Q Xia, CS Hwang, ... Nature communications 9 (1), 417, 2018 | 356 | 2018 |
Capacitive neural network with neuro-transistors Z Wang, M Rao, JW Han, J Zhang, P Lin, Y Li, C Li, W Song, S Asapu, ... Nature communications 9 (1), 3208, 2018 | 253 | 2018 |
Highly Uniform, Electroforming‐Free, and Self‐Rectifying Resistive Memory in the Pt/Ta2O5/HfO2‐x/TiN Structure JH Yoon, SJ Song, IH Yoo, JY Seok, KJ Yoon, DE Kwon, TH Park, ... Advanced Functional Materials 24 (32), 5086-5095, 2014 | 243 | 2014 |
A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure KM Kim, BJ Choi, MH Lee, GH Kim, SJ Song, JY Seok, JH Yoon, S Han, ... Nanotechnology 22 (25), 254010, 2011 | 225 | 2011 |
Highly improved uniformity in the resistive switching parameters of TiO2 thin films by inserting Ru nanodots. JH Yoon, JH Han, JS Jung, W Jeon, GH Kim, SJ Song, JY Seok, KJ Yoon, ... Advanced Materials (Deerfield Beach, Fla.) 25 (14), 1987-1992, 2013 | 199 | 2013 |
32× 32 crossbar array resistive memory composed of a stacked Schottky diode and unipolar resistive memory GH Kim, JH Lee, Y Ahn, W Jeon, SJ Song, JY Seok, JH Yoon, KJ Yoon, ... Advanced Functional Materials 23 (11), 1440-1449, 2013 | 190 | 2013 |
Pt/Ta2O5/HfO2−x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash JH Yoon, KM Kim, SJ Song, JY Seok, KJ Yoon, DE Kwon, TH Park, ... Advanced Materials 27 (25), 3811-3816, 2015 | 187 | 2015 |
Electrically configurable electroforming and bipolar resistive switching in Pt/TiO2/Pt structures KM Kim, GH Kim, SJ Song, JY Seok, MH Lee, JH Yoon, CS Hwang Nanotechnology 21 (30), 305203, 2010 | 178 | 2010 |
Nociceptive memristor Y Kim, YJ Kwon, DE Kwon, KJ Yoon, JH Yoon, S Yoo, HJ Kim, TH Park, ... Advanced Materials 30 (8), 1704320, 2018 | 157 | 2018 |
Study on the electrical conduction mechanism of bipolar resistive switching TiO2 thin films using impedance spectroscopy MH Lee, KM Kim, GH Kim, JY Seok, SJ Song, JH Yoon, CS Hwang Applied Physics Letters 96 (15), 2010 | 120 | 2010 |
Memristive tri-stable resistive switching at ruptured conducting filaments of a Pt/TiO2/Pt cell KJ Yoon, MH Lee, GH Kim, SJ Song, JY Seok, S Han, JH Yoon, KM Kim, ... Nanotechnology 23 (18), 185202, 2012 | 110 | 2012 |
Real-time identification of the evolution of conducting nano-filaments in TiO2 thin film ReRAM SJ Song, JY Seok, JH Yoon, KM Kim, GH Kim, MH Lee, CS Hwang Scientific reports 3 (1), 3443, 2013 | 104 | 2013 |
Stabilization of Tetragonal HfO2 under Low Active Oxygen Source Environment in Atomic Layer Deposition DY Cho, HS Jung, IH Yu, JH Yoon, HK Kim, SY Lee, SH Jeon, S Han, ... Chemistry of Materials 24 (18), 3534-3543, 2012 | 103 | 2012 |
Improved endurance of resistive switching TiO2 thin film by hourglass shaped Magnéli filaments G Hwan Kim, J Ho Lee, J Yeong Seok, S Ji Song, J Ho Yoon, ... Applied physics letters 98 (26), 2011 | 97 | 2011 |
Collective motion of conducting filaments in Pt/n‐type TiO2/p‐type NiO/Pt stacked resistance switching memory KM Kim, SJ Song, GH Kim, JY Seok, MH Lee, JH Yoon, J Park, CS Hwang Advanced Functional Materials 21 (9), 1587-1592, 2011 | 97 | 2011 |
Truly Electroforming‐Free and Low‐Energy Memristors with Preconditioned Conductive Tunneling Paths JH Yoon, J Zhang, X Ren, Z Wang, H Wu, Z Li, M Barnell, Q Wu, ... Advanced Functional Materials 27 (35), 1702010, 2017 | 92 | 2017 |
A Low‐Current and Analog Memristor with Ru as Mobile Species JH Yoon, J Zhang, P Lin, N Upadhyay, P Yan, Y Liu, Q Xia, JJ Yang Advanced Materials 32 (9), 1904599, 2020 | 82 | 2020 |
A memristor with low switching current and voltage for 1S1R integration and array operation NK Upadhyay, W Sun, P Lin, S Joshi, R Midya, X Zhang, Z Wang, H Jiang, ... Advanced Electronic Materials 6 (5), 1901411, 2020 | 63 | 2020 |