| Significant reduction in sidewall damage related external quantum efficiency (EQE) drop in red InGaN microLEDs (~625nm at 1 A/cm2) with device sizes down to 3μm S Sanyal, Q Lin, T Shih, S Zhang, G Wang, S Mukhopadhyay, J Vigen, ... Japanese Journal of Applied Physics, 2024 | 1 | 2024 |
| First Demonstration of Extrinsic C-Doped Semi-Insulating N-Polar GaN Using Propane Precursor Grown on Miscut Sapphire Substrate by MOCVD S Mukhopadhyay, S Sanyal, G Wang, C Gupta, SS Pasayat Crystals 13 (10), 1457, 2023 | 1 | 2023 |
| MOCVD of InGaN on ScAlMgO4 on Al2O3 Substrates with Improved Surface Morphology and Crystallinity G Wang, Y Li, J Kirch, Y Han, J Chen, S Marks, S Mukhopadhyay, R Liu, ... Crystals 13 (3), 446, 2023 | 1 | 2023 |
| In situ grown single crystal aluminum as a nonalloyed ohmic contact to n-ZnSe by molecular beam epitaxy Z Fan, R Bunk, G Wang, JM Woodall Journal of Vacuum Science & Technology B 38 (4), 2020 | 1 | 2020 |
| Demonstration of Watt Level 375 nm Short Cavity Laser Diode with Etched Facets Q Lin, G Wang, C Liu, S Sanyal, S Mukhopadhyay, M Dwyer, M Seitz, ... IEEE Photonics Technology Letters, 2024 | | 2024 |
| Optimization of p-type contact for electrical injection and light extraction for 365 nm UV-A LEDs Y Li, G Wang, Q Lin, S Xie, W Zhang, T Shih, J Vigen, S Mukhopadhyay, ... Semiconductor Science and Technology 39 (6), 065004, 2024 | | 2024 |
| Demonstration of ultraviolet III-nitride laser diode with an asymmetric waveguide structure M Seitz, J Boisvere, B Melanson, C Liu, Q Lin, G Wang, M Dwyer, T Earles, ... Gallium Nitride Materials and Devices XIX 12886, 35-40, 2024 | | 2024 |
| MOCVD grown ultraviolet microlight-emitting diodes with an InGaN/GaN/AlGaN active region design G Wang, Y Li, C Liu, Q Lin, S Sanyal, C Gupta, SS Pasayat Journal of Vacuum Science & Technology A 41 (6), 2023 | | 2023 |
| Crack-Free High-Composition (> 35%) Thick-Barrier (> 30 nm) AlGaN/AlN/GaN High-Electron-Mobility Transistor on Sapphire with Low Sheet Resistance (< 250 Ω/□) S Mukhopadhyay, C Liu, J Chen, M Tahmidul Alam, S Sanyal, R Bai, ... Crystals 13 (10), 1456, 2023 | | 2023 |
| Crack-free high composition (> 35%) thick (> 30 nm) barrier AlGaN/AlN/GaN HEMT on sapphire with record low sheet resistance S Mukhopadhyay, C Liu, J Chen, S Sanyal, R Bai, G Wang, C Gupta, ... arXiv preprint arXiv:2304.05593, 2023 | | 2023 |
| Demonstration of near‐size independent EQE for 368 nm UV micro‐LEDs G Wang, S Xie, Y Li, W Zhang, J Vigen, T Shih, Q Lin, J Gong, Z Ma, ... physica status solidi (RRL)–Rapid Research Letters, 0 | | |
