| High resolution alpha particle detection using 4H–SiC epitaxial layers: Fabrication, characterization, and noise analysis SK Chaudhuri, KJ Zavalla, KC Mandal Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2013 | 87 | 2013 |
| Experimental determination of electron-hole pair creation energy in 4H-SiC epitaxial layer: An absolute calibration approach SK Chaudhuri, KJ Zavalla, KC Mandal Applied Physics Letters 102 (3), 2013 | 78 | 2013 |
| Low Energy X-Ray and gamma-Ray Detectors Fabricated on n-Type 4H-SiC Epitaxial Layer KC Mandal, PG Muzykov, SK Chaudhuri, JR Terry IEEE Transaction on Nuclear Sciences 60 (4), 2888-2893, 2013 | 66 | 2013 |
| Characterization of defects in ZnO nanocrystals: Photoluminescence and positron annihilation spectroscopic studies AK Mishra, SK Chaudhuri, S Mukherjee, A Priyam, A Saha, D Das Journal of Applied Physics 102 (10), 2007 | 56 | 2007 |
| Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices KC Mandal, JW Kleppinger, SK Chaudhuri Micromachines 11 (3), 254, 2020 | 49 | 2020 |
| Effect of Z1/2, EH5, and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies MA Mannan, SK Chaudhuri, KV Nguyen, KC Mandal Journal of Applied Physics 115 (22), 2014 | 49 | 2014 |
| Correlation of deep levels with detector performance in 4H-SiC epitaxial schottky barrier alpha detectors KC Mandal, SK Chaudhuri, KV Nguyen, MA Mannan IEEE Transactions on Nuclear Science 61 (4), 2338-2344, 2014 | 48 | 2014 |
| Defect levels in Cu2ZnSn (SxSe1− x) 4 solar cells probed by current-mode deep level transient spectroscopy S Das, SK Chaudhuri, RN Bhattacharya, KC Mandal Applied Physics Letters 104 (19), 2014 | 48 | 2014 |
| Probing defects in chemically synthesized ZnO nanostrucures by positron annihilation and photoluminescence spectroscopy SK Chaudhuri, M Ghosh, D Das, AK Raychaudhuri Journal of applied physics 108 (6), 2010 | 43 | 2010 |
| Defect characterization and charge transport measurements in high-resolution Ni/n-4H-SiC Schottky barrier radiation detectors fabricated on 250 μm epitaxial layers JW Kleppinger, SK Chaudhuri, OF Karadavut, KC Mandal Journal of Applied Physics 129 (24), 2021 | 42 | 2021 |
| Large Area Pixelated Detector: Fabrication and Characterization SK Chaudhuri, K Nguyen, RO Pak, L Matei, V Buliga, M Groza, A Burger, ... Nuclear Science, IEEE Transactions on 61 (2), 793-798, 2014 | 36 | 2014 |
| Schottky barrier detectors on 4H-SiC n-type epitaxial layer for alpha particles SK Chaudhuri, RM Krishna, KJ Zavalla, KC Mandal Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2013 | 34 | 2013 |
| Charge transport properties in CdZnTeSe semiconductor room-temperature γ-ray detectors SK Chaudhuri, M Sajjad, JW Kleppinger, KC Mandal Journal of Applied Physics 127 (24), 2020 | 33 | 2020 |
| Characterization of Cd0.9Zn0.1Te based virtual Frisch grid detectors for high energy gamma ray detection RM Krishna, SK Chaudhuri, KJ Zavalla, KC Mandal Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2012 | 31 | 2012 |
| Radiation detection using fully depleted 50 μm thick Ni/n-4H-SiC epitaxial layer Schottky diodes with ultra-low concentration of Z1/2 and EH6/7 deep defects SK Chaudhuri, JW Kleppinger, KC Mandal Journal of Applied Physics 128 (11), 2020 | 29 | 2020 |
| Cd0.9Zn0.1Te Crystal Growth and Fabrication of Large Volume Single-Polarity Charge Sensing Gamma Detectors SK Chaudhuri, RM Krishna, KJ Zavalla, L Matei, V Buliga, M Groza, ... IEEE Transactions on Nuclear Science 60 (4), 2853 - 2858, 2013 | 27 | 2013 |
| Role of deep levels and barrier height lowering in current-flow mechanism in 150 μm thick epitaxial n-type 4H–SiC Schottky barrier radiation detectors JW Kleppinger, SK Chaudhuri, OF Karadavut, KC Mandal Applied Physics Letters 119 (6), 2021 | 23 | 2021 |
| High-resolution radiation detection using Ni/SiO2/n-4H-SiC vertical metal-oxide-semiconductor capacitor SK Chaudhuri, OF Karadavut, JW Kleppinger, KC Mandal Journal of Applied Physics 130 (7), 2021 | 21 | 2021 |
| Quaternary Semiconductor Cd1-xZnxTe1-ySey for High-Resolution, Room-Temperature Gamma-Ray Detection SK Chaudhuri, JW Kleppinger, OF Karadavut, R Nag, KC Mandal Crystals 11 (7), 827, 2021 | 21 | 2021 |
| Effect of gamma irradiation on the polymer electrolyte PEO-NH4ClO4 M Sinha, MM Goswami, D Mal, TR Middya, S Tarafdar, U De, ... Ionics 14, 323-327, 2008 | 21 | 2008 |
Krishna MandalDepartment of Electrical Engineering, University of South Carolina, Columbia, SC 29208, USA在 cec.sc.edu 的电子邮件经过验证
