| Variation of lateral width technique in SoI high-voltage lateral double-diffused metal–oxide–semiconductor transistors using high-k dielectric Y Guo, J Yao, B Zhang, H Lin, C Zhang IEEE Electron Device Letters 36 (3), 262-264, 2015 | 69 | 2015 |
| β-Ga2O3-Based Power Devices: A Concise Review M Zhang, Z Liu, L Yang, J Yao, J Chen, J Zhang, W Wei, Y Guo, W Tang Crystals 12 (3), 406, 2022 | 48 | 2022 |
| Powernet: SOI lateral power device breakdown prediction with deep neural networks J Chen, MB Alawieh, Y Lin, M Zhang, J Zhang, Y Guo, DZ Pan IEEE Access 8, 25372-25382, 2020 | 47 | 2020 |
| Simulation study of the double-gate tunnel field-effect transistor with step channel thickness M Zhang, Y Guo, J Zhang, J Yao, J Chen Nanoscale Research Letters 15, 1-9, 2020 | 27 | 2020 |
| Effective doping concentration theory: A new physical insight for the double-RESURF lateral power devices on SOI substrate J Zhang, YF Guo, DZ Pan, KM Yang, XJ Lian, JF Yao IEEE Transactions on Electron Devices 65 (2), 648-654, 2018 | 26 | 2018 |
| A novel variation of lateral doping technique in SOI LDMOS with circular layout K Yang, Y Guo, DZ Pan, J Zhang, M Li, Y Tong, L He, J Yao IEEE Transactions on Electron Devices 65 (4), 1447-1452, 2018 | 25 | 2018 |
| Automatic selection of structure parameters of silicon on insulator lateral power device using Bayesian optimization J Chen, MB Alawieh, Y Lin, M Zhang, J Zhang, Y Guo, DZ Pan IEEE Electron Device Letters 41 (9), 1288-1291, 2020 | 22 | 2020 |
| A novel Bulk-FinFET with dual-material gate Y Hong, Y Guo, H Yang, J Yao, J Zhang, X Ji 2014 12th IEEE international conference on solid-state and integrated …, 2014 | 22 | 2014 |
| High-temperature reliability of all-oxide self-powered deep UV photodetector based on ϵ-Ga2O3/ZnO heterojunction M Zhang, Z Liu, L Yang, J Yao, J Chen, J Zhang, W Wei, Y Guo, W Tang Journal of Physics D: Applied Physics 55 (37), 375106, 2022 | 18 | 2022 |
| One-dimensional breakdown voltage model of SOI RESURF lateral power device based on lateral linearly graded approximation J Zhang, YF Guo, Y Xu, H Lin, H Yang, Y Hong, JF Yao Chinese Physics B 24 (2), 028502, 2015 | 18 | 2015 |
| Analytical model for the potential and electric field distributions of AlGaN/GaN HEMTs with gate-connected FP based on equivalent potential method J Liu, Y Guo, J Zhang, J Yao, X Huang, C Huang, Z Huang, K Yang Superlattices and Microstructures 138, 106327, 2020 | 15 | 2020 |
| 3D analytical model for the SOI LDMOS with alternating silicon and high-k dielectric pillars J Yao, Y Guo, T Xia, J Zhang, H Lin Superlattices and Microstructures 96, 95-103, 2016 | 12 | 2016 |
| Novel LDMOS With Integrated Triple Direction High-k Gate and Field Dielectrics J Yao, Z Zhang, Y Guo, J Wu, Y He, M Li, H Lin IEEE Transactions on Electron Devices 68 (8), 3997-4003, 2021 | 11 | 2021 |
| Breakdown voltage prediction of SOI lateral power device using deep neural network J Chen, Y Guo, Y Lin, MB Alawieh, M Zhang, J Zhang, DZ Pan 2019 Cross Strait Quad-Regional Radio Science and Wireless Technology …, 2019 | 9 | 2019 |
| A novel 3-D analytical method for curvature effect-induced electric field crowding in SOI lateral power device J Zhang, YF Guo, DZ Pan, KM Yang IEEE Transactions on Electron Devices 63 (11), 4359-4365, 2016 | 9 | 2016 |
| Numerical and analytical investigations for the SOI LDMOS with alternated high-k dielectric and step doped silicon pillars JF Yao, YF Guo, ZY Zhang, KM Yang, ML Zhang, T Xia Chinese Physics B 29 (3), 038503, 2020 | 8 | 2020 |
| Effective concentration profile: Mechanism of gate field-plate assistant effect in SOI lateral power devices J Zhang, YF Guo, DZ Pan IEEE Transactions on Electron Devices 65 (10), 4476-4482, 2018 | 8 | 2018 |
| A 2.2 kV organic semiconductor-based lateral power device J Zhang, J Zhou, Y Wang, M Li, L Du, J Chen, M Zhang, J Yao, G Zhang, ... IEEE Electron Device Letters 43 (2), 276-279, 2021 | 7 | 2021 |
| Analytical Study on the Breakdown Characteristics of Si-Substrated AlGaN/GaN HEMTs With Field Plates J Liu, YF Guo, J Zhang, J Yao, M Zhang, C Huang, L Du IEEE Journal of the Electron Devices Society 8, 1031-1038, 2020 | 7 | 2020 |
| Simulation investigation of the diffusion enhancement effects in FinFET with graded fin width M Zhang, Y Guo, J Chen, J Zhang, Y Tong IEEE Transactions on Nanotechnology 18, 700-703, 2019 | 7 | 2019 |
