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Mehrzad Karamimanesh
Mehrzad Karamimanesh
Shiraz university of technology
在 sutech.ac.ir 的电子邮件经过验证 - 首页
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引用次数
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A robust and write bit-line free sub-threshold 12T-SRAM for ultra low power applications in 14 nm FinFET technology
M Karamimanesh, E Abiri, K Hassanli, MR Salehi, A Darabi
Microelectronics Journal 118, 105185, 2021
282021
A schmitt-trigger-based low-voltage 11 T SRAM cell for low-leakage in 7-nm FinFET technology
E Abbasian, E Mani, M Gholipour, M Karamimanesh, M Sahid, A Zaidi
Circuits, Systems, and Signal Processing 41 (6), 3081-3105, 2022
232022
A write bit-line free sub-threshold SRAM cell with fully half-select free feature and high reliability for ultra-low power applications
M Karamimanesh, E Abiri, K Hassanli, MR Salehi, A Darabi
AEU-International Journal of Electronics and Communications 145, 154075, 2022
182022
Energy efficient approximate multipliers compatible with error-tolerant application
A Minaeifar, E Abiri, K Hassanli, M Karamimanesh, F Ahmadi
Computers and Electrical Engineering 114, 109064, 2024
12024
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