| Mimicry of excitatory and inhibitory artificial neuron with leaky integrate-and-fire function by a single MOSFET JK Han, M Seo, WK Kim, MS Kim, SY Kim, MS Kim, GJ Yun, GB Lee, ... IEEE Electron Device Letters 41 (2), 208-211, 2019 | 85 | 2019 |
| Cointegration of single-transistor neurons and synapses by nanoscale CMOS fabrication for highly scalable neuromorphic hardware JK Han, J Oh, GJ Yun, D Yoo, MS Kim, JM Yu, SY Choi, YK Choi Science Advances 7 (32), eabg8836, 2021 | 67 | 2021 |
| A temperature sensor with a thermillator MW Lee, JK Han, GJ Yun, JM Yu, GB Lee, SJ Han, YK Choi IEEE Electron Device Letters 42 (11), 1654-1657, 2021 | 14 | 2021 |
| A poly‐crystalline silicon nanowire transistor with independently controlled double‐gate for physically unclonable function by multi‐states and self‐destruction JM Yu, GJ Yun, MS Kim, JK Han, DJ Kim, YK Choi Advanced Electronic Materials 7 (5), 2000989, 2021 | 14 | 2021 |
| One biristor-two transistor (1B2T) neuron with reduced output voltage and pulsewidth for energy-efficient neuromorphic hardware JK Han, GJ Yun, SJ Han, JM Yu, YK Choi IEEE Transactions on Electron Devices 68 (1), 430-433, 2020 | 7 | 2020 |
| Ternary logic decoder using independently controlled double-gate Si-NW MOSFETs SJ Han, JK Han, MS Kim, GJ Yun, JM Yu, IW Tcho, M Seo, GB Lee, ... Scientific reports 11 (1), 13018, 2021 | 5 | 2021 |
| A steep-slope phenomenon by gate charge pumping in a MOSFET MS Kim, GJ Yun, WK Kim, M Seo, DJ Kim, JM Yu, JK Han, J Hur, GB Lee, ... IEEE Electron Device Letters 43 (4), 521-524, 2022 | 2 | 2022 |
| Ultra-fast data sanitization of SRAM by back-biasing to resist a cold boot attack SJ Han, JK Han, GJ Yun, MW Lee, JM Yu, YK Choi Scientific reports 12 (1), 35, 2022 | 2 | 2022 |
| Self-Heating Effects in 3-D Vertical-NAND (V-NAND) Flash Memory GJ Yun, DH Yun, JY Park, SY Kim, YK Choi IEEE Transactions on Electron Devices 67 (12), 5505-5510, 2020 | | 2020 |
Yang-Kyu ChoiProfessor of Electrical Engineering, KAIST在 ee.kaist.ac.kr 的电子邮件经过验证
