Single and multiband modeling of quantum electron transport through layered semiconductor devices R Lake, G Klimeck, RC Bowen, D Jovanovic Journal of Applied Physics 81 (12), 7845-7869, 1997 | 1022 | 1997 |
Tin Disulfide An Emerging Layered Metal Dichalcogenide Semiconductor: Materials Properties and Device Characteristics Y Huang, E Sutter, JT Sadowski, M Cotlet, OLA Monti, DA Racke, ... ACS nano 8 (10), 10743-10755, 2014 | 533 | 2014 |
Electronic and thermoelectric properties of few-layer transition metal dichalcogenides D Wickramaratne, F Zahid, RK Lake The Journal of chemical physics 140 (12), 2014 | 442 | 2014 |
Nonequilibrium Green’s-function method applied to double-barrier resonant-tunneling diodes R Lake, S Datta Physical Review B 45 (12), 6670, 1992 | 333 | 1992 |
Thermal percolation threshold and thermal properties of composites with high loading of graphene and boron nitride fillers F Kargar, Z Barani, R Salgado, B Debnath, JS Lewis, E Aytan, RK Lake, ... ACS applied materials & interfaces 10 (43), 37555-37565, 2018 | 297 | 2018 |
Gate tunable quantum oscillations in air-stable and high mobility few-layer phosphorene heterostructures N Gillgren, D Wickramaratne, Y Shi, T Espiritu, J Yang, J Hu, J Wei, X Liu, ... 2D Materials 2 (1), 011001, 2014 | 282 | 2014 |
Thermal conductivity of graphene with defects induced by electron beam irradiation H Malekpour, P Ramnani, S Srinivasan, G Balasubramanian, DL Nika, ... Nanoscale 8 (30), 14608-14616, 2016 | 244 | 2016 |
Electronic properties of silicon nanowires Y Zheng, C Rivas, R Lake, K Alam, TB Boykin, G Klimeck IEEE transactions on electron devices 52 (6), 1097-1103, 2005 | 244 | 2005 |
A charge-density-wave oscillator based on an integrated tantalum disulfide–boron nitride–graphene device operating at room temperature G Liu, B Debnath, TR Pope, TT Salguero, RK Lake, AA Balandin Nature nanotechnology 11 (10), 845-850, 2016 | 222 | 2016 |
Charge Density Waves in Exfoliated Films of van der Waals Materials: Evolution of Raman Spectrum in TiSe2 P Goli, J Khan, D Wickramaratne, RK Lake, AA Balandin Nano letters 12 (11), 5941-5945, 2012 | 220 | 2012 |
Room temperature operation of epitaxially grown resonant interband tunneling diodes SL Rommel, TE Dillon, MW Dashiell, H Feng, J Kolodzey, PR Berger, ... Applied Physics Letters 73 (15), 2191-2193, 1998 | 205 | 1998 |
MonolayerTransistors Beyond the Technology Road Map K Alam, RK Lake IEEE transactions on electron devices 59 (12), 3250-3254, 2012 | 204 | 2012 |
Quantitative simulation of a resonant tunneling diode RC Bowen, G Klimeck, RK Lake, WR Frensley, T Moise Journal of applied physics 81 (7), 3207-3213, 1997 | 202 | 1997 |
Quantum device simulation with a generalized tunneling formula G Klimeck, R Lake, RC Bowen, WR Frensley, TS Moise Applied physics letters 67 (17), 2539-2541, 1995 | 178 | 1995 |
Towards van der Waals epitaxial growth of GaAs on Si using a graphene buffer layer Y Alaskar, S Arafin, D Wickramaratne, MA Zurbuchen, L He, J McKay, ... Advanced Functional Materials 24 (42), 6629-6638, 2014 | 165 | 2014 |
Binding a Hopfion in Chiral Magnet Nanodisk Y Liu, R Lake, J Zang Phys. Rev. B 98 (17), 174437, 2018 | 158 | 2018 |
Binding a Hopfion in Chiral Magnet Nanodisk Y Liu, R Lake, J Zang arXiv preprint arXiv:1806.01682, 2018 | 158 | 2018 |
Electronic and thermoelectric properties of van der Waals materials with ring-shaped valence bands D Wickramaratne, F Zahid, RK Lake Journal of Applied Physics 118 (7), 2015 | 152 | 2015 |
Spin-phonon coupling in antiferromagnetic nickel oxide E Aytan, B Debnath, F Kargar, Y Barlas, MM Lacerda, JX Li, RK Lake, ... Applied Physics Letters 111 (25), 2017 | 149 | 2017 |
Fundamentals of lateral and vertical heterojunctions of atomically thin materials A Pant, Z Mutlu, D Wickramaratne, H Cai, RK Lake, C Ozkan, S Tongay Nanoscale 8 (7), 3870-3887, 2016 | 143 | 2016 |