| Figure of merit for and identification of sub-60 mV/decade devices WG Vandenberghe, AS Verhulst, B Sorée, W Magnus, G Groeseneken, ... Applied Physics Letters 102 (1), 2013 | 132 | 2013 |
| 2D materials: roadmap to CMOS integration C Huyghebaert, T Schram, Q Smets, TK Agarwal, D Verreck, S Brems, ... 2018 IEEE International Electron Devices Meeting (IEDM), 22.1. 1-22.1. 4, 2018 | 96 | 2018 |
| Ultra-scaled MOCVD MoS2 MOSFETs with 42nm contact pitch and 250µA/µm drain current Q Smets, G Arutchelvan, J Jussot, D Verreck, I Asselberghs, AN Mehta, ... 2019 IEEE International Electron Devices Meeting (IEDM), 23.2. 1-23.2. 4, 2019 | 90 | 2019 |
| Yield, variability, reliability, and stability of two-dimensional materials based solid-state electronic devices M Lanza, Q Smets, C Huyghebaert, LJ Li Nature communications 11 (1), 5689, 2020 | 85 | 2020 |
| Two-Dimensional Crystal Grain Size Tuning in WS2 Atomic Layer Deposition: An Insight in the Nucleation Mechanism B Groven, A Nalin Mehta, H Bender, J Meersschaut, T Nuytten, ... Chemistry of Materials 30 (21), 7648-7663, 2018 | 68 | 2018 |
| MoS2/MoTe2 Heterostructure Tunnel FETs Using Gated Schottky Contacts Y Balaji, Q Smets, Á Śzabo, M Mascaro, D Lin, I Asselberghs, I Radu, ... Advanced Functional Materials 30 (4), 1905970, 2020 | 63 | 2020 |
| InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models Q Smets, D Verreck, AS Verhulst, R Rooyackers, C Merckling, ... Journal of Applied Physics 115 (18), 2014 | 60 | 2014 |
| Tunnel field effect transistor and method for making thereof AS Verhulst, Q Smets US Patent 9,318,583, 2016 | 49 | 2016 |
| Tunneling Transistors Based on MoS2/MoTe2 Van der Waals Heterostructures Y Balaji, Q Smets, CJL De La Rosa, AKA Lu, D Chiappe, T Agarwal, ... IEEE Journal of the Electron Devices Society 6, 1048-1055, 2018 | 47 | 2018 |
| Record performance InGaAs homo-junction TFET with superior SS reliability over MOSFET A Alian, J Franco, A Vandooren, Y Mols, A Verhulst, S El Kazzi, ... 2015 IEEE International Electron Devices Meeting (IEDM), 31.7. 1-31.7. 4, 2015 | 43 | 2015 |
| Impact of device scaling on the electrical properties of MoS2 field-effect transistors G Arutchelvan, Q Smets, D Verreck, Z Ahmed, A Gaur, S Sutar, J Jussot, ... Scientific reports 11 (1), 6610, 2021 | 38 | 2021 |
| Wafer-scale integration of double gated WS2-transistors in 300mm Si CMOS fab I Asselberghs, Q Smets, T Schram, B Groven, D Verreck, A Afzalian, ... 2020 IEEE International Electron Devices Meeting (IEDM), 40.2. 1-40.2. 4, 2020 | 38 | 2020 |
| Introducing 2D-FETs in device scaling roadmap using DTCO Z Ahmed, A Afzalian, T Schram, D Jang, D Verreck, Q Smets, ... 2020 IEEE International Electron Devices Meeting (IEDM), 22.5. 1-22.5. 4, 2020 | 38 | 2020 |
| Reactive plasma cleaning and restoration of transition metal dichalcogenide monolayers D Marinov, JF de Marneffe, Q Smets, G Arutchelvan, KM Bal, E Voronina, ... npj 2D Materials and Applications 5 (1), 17, 2021 | 36 | 2021 |
| Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates B Groven, AN Mehta, H Bender, Q Smets, J Meersschaut, A Franquet, ... Journal of Vacuum Science & Technology A 36 (1), 2018 | 36 | 2018 |
| Calibration of bulk trap-assisted tunneling and Shockley–Read–Hall currents and impact on InGaAs tunnel-FETs Q Smets, AS Verhulst, E Simoen, D Gundlach, C Richter, N Collaert, ... IEEE Transactions on Electron Devices 64 (9), 3622-3626, 2017 | 36 | 2017 |
| WS2 transistors on 300 mm wafers with BEOL compatibility T Schram, Q Smets, B Groven, MH Heyne, E Kunnen, A Thiam, ... 2017 47th European Solid-State Device Research Conference (ESSDERC), 212-215, 2017 | 32 | 2017 |
| Calibration of the effective tunneling bandgap in GaAsSb/InGaAs for improved TFET performance prediction Q Smets, AS Verhulst, S El Kazzi, D Gundlach, CA Richter, A Mocuta, ... IEEE transactions on electron devices 63 (11), 4248-4254, 2016 | 31 | 2016 |
| Understanding and modelling the PBTI reliability of thin-film IGZO transistors A Chasin, J Franco, K Triantopoulos, H Dekkers, N Rassoul, A Belmonte, ... 2021 IEEE International Electron Devices Meeting (IEDM), 31.1. 1-31.1. 4, 2021 | 28 | 2021 |
| Perspective of tunnel-FET for future low-power technology nodes AS Verhulst, D Verreck, Q Smets, KH Kao, M Van de Put, R Rooyackers, ... 2014 IEEE International Electron Devices Meeting, 30.2. 1-30.2. 4, 2014 | 26 | 2014 |
