| Intrinsic charge trapping in amorphous oxide films: status and challenges J Strand, M Kaviani, D Gao, AM El-Sayed, VV Afanas’ev, AL Shluger Journal of Physics: Condensed Matter 30 (23), 233001, 2018 | 81 | 2018 |
| Intrinsic electron traps in atomic-layer deposited HfO2 insulators F Cerbu, O Madia, DV Andreev, S Fadida, M Eizenberg, L Breuil, ... Applied Physics Letters 108 (22), 2016 | 55 | 2016 |
| Mechanisms of oxygen vacancy aggregation in SiO2 and HfO2 DZ Gao, J Strand, MS Munde, AL Shluger Frontiers in Physics 7, 43, 2019 | 54 | 2019 |
| Deep electron and hole polarons and bipolarons in amorphous oxide M Kaviani, J Strand, VV Afanas' ev, AL Shluger Physical Review B 94 (2), 020103, 2016 | 54 | 2016 |
| Properties of intrinsic point defects and dimers in hexagonal boron nitride J Strand, L Larcher, AL Shluger Journal of Physics: Condensed Matter 32 (5), 055706, 2019 | 48 | 2019 |
| First principles calculations of optical properties for oxygen vacancies in binary metal oxides J Strand, SK Chulkov, MB Watkins, AL Shluger The Journal of Chemical Physics 150 (4), 2019 | 36 | 2019 |
| Intrinsic electron trapping in amorphous oxide J Strand, M Kaviani, VV Afanas’ev, JG Lisoni, AL Shluger Nanotechnology 29 (12), 125703, 2018 | 36 | 2018 |
| Dielectric breakdown in HfO2 dielectrics: Using multiscale modeling to identify the critical physical processes involved in oxide degradation J Strand, P La Torraca, A Padovani, L Larcher, AL Shluger Journal of Applied Physics 131 (23), 2022 | 30 | 2022 |
| Effect of electric field on defect generation and migration in JW Strand, J Cottom, L Larcher, AL Shluger Physical Review B 102 (1), 014106, 2020 | 25 | 2020 |
| Hole trapping in amorphous HfO2 and Al2O3 as a source of positive charging J Strand, OA Dicks, M Kaviani, AL Shluger Microelectronic Engineering 178, 235-239, 2017 | 21 | 2017 |
| Variability sources and reliability of 3D—FeFETs M Pešić, B Beltrando, A Padovani, S Gangopadhyay, M Kaliappan, ... 2021 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2021 | 18 | 2021 |
| Electron trapping in ferroelectric RA Izmailov, JW Strand, L Larcher, BJ O'Sullivan, AL Shluger, ... Physical Review Materials 5 (3), 034415, 2021 | 17 | 2021 |
| Defect creation in amorphous HfO2 facilitated by hole and electron injection J Strand, M Kaviani, AL Shluger Microelectronic Engineering 178, 279-283, 2017 | 16 | 2017 |
| Role of long-range exact exchange in polaron charge transition levels: The case of MgO D Wing, J Strand, T Durrant, AL Shluger, L Kronik Physical Review Materials 4 (8), 083808, 2020 | 10 | 2020 |
| Towards a Universal Model of Dielectric Breakdown A Padovani, P La Torraca, J Strand, A Shluger, V Milo, L Larcher 2023 IEEE International Reliability Physics Symposium (IRPS), 1-8, 2023 | 9 | 2023 |
| Variability and disturb sources in ferroelectric 3D NANDs and comparison to charge-trap equivalents M Pešić, A Padovani, T Rollo, B Beltrando, J Strand, P Agrawal, A Shluger, ... 2022 IEEE International Memory Workshop (IMW), 1-4, 2022 | 8 | 2022 |
| Role of electron and hole trapping in the degradation and breakdown of SiO2 and HfO2 films DZ Gao, J Strand, AM El-Sayed, AL Shluger, A Padovani, L Larcher 2018 IEEE International Reliability Physics Symposium (IRPS), 5A. 2-1-5A. 2-7, 2018 | 8 | 2018 |
| On the Structure of Oxygen Deficient Amorphous Oxide Films J Strand, AL Shluger Advanced Science 11 (8), 2306243, 2024 | 3 | 2024 |
| Electron emission from deep traps in under thermal and optical excitation R Izmailov, J Strand, A Shluger, V Afanas' ev Physical Review B 109 (13), 134109, 2024 | 1 | 2024 |
| The Role of Carrier Injection in the Breakdown Mechanism of Amorphous Al2O3 Layers P La Torraca, A Padovani, J Strand, A Shluger, L Larcher IEEE Electron Device Letters, 2023 | 1 | 2023 |
