| ASM GaN: Industry standard model for GaN RF and power devices—Part 1: DC, CV, and RF model S Khandelwal, YS Chauhan, TA Fjeldly, S Ghosh, A Pampori, D Mahajan, ... IEEE Transactions on Electron Devices 66 (1), 80-86, 2018 | 124 | 2018 |
| ASM GaN: Industry standard model for GaN RF and power devices—Part-II: Modeling of charge trapping SA Albahrani, D Mahajan, J Hodges, YS Chauhan, S Khandelwal IEEE Transactions on Electron Devices 66 (1), 87-94, 2018 | 80 | 2018 |
| Extreme temperature modeling of ALGAN/GAN HEMTS SA Albahrani, D Mahajan, S Kargarrazi, D Schwantuschke, T Gneiting, ... IEEE Transactions on Electron Devices 67 (2), 430-437, 2020 | 28 | 2020 |
| Reliability simulation and analysis of important RF circuits using cadence Relxpert D Mahajan, V Ruparelia 2018 IEEE International Conference on Electronics, Computing and …, 2018 | 13 | 2018 |
| Impact of p-GaN layer doping on switching performance of enhancement mode GaN devices D Mahajan, S Khandelwal 2018 IEEE 19th Workshop on Control and Modeling for Power Electronics …, 2018 | 12 | 2018 |
| Physics-oriented device model for packaged GaN devices DD Mahajan, SA Albahrani, R Sodhi, T Eguchi, S Khandelwal IEEE Transactions on Power Electronics 35 (6), 6332-6339, 2019 | 10 | 2019 |
| Modeling of the impact of the substrate voltage on the capacitances of GaN-on-Si HEMTs SA Albahrani, D Mahajan, S Moench, R Reiner, P Waltereit, ... IEEE Transactions on Electron Devices 66 (12), 5103-5110, 2019 | 7 | 2019 |
| An analytical model for hot carrier induced long-term degradation in power amplifiers H Eslahi, SA Albahrani, D Mahajan, S Khandelwal IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2019 | 5 | 2019 |
| Statistical modeling of gan power devices with asm-gan model D Mahajan, S Khandelwal 2020 IEEE International Conference on Power Electronics, Drives and Energy …, 2020 | 4 | 2020 |
| A Study of Hard Switching Characteristics of GaN-based DC-DC Boost Power Converter using ASM-GaN Compact Model D Mahajan, SA Albahrani, H Eslahi, S Khandelwal 2018 Australasian Universities Power Engineering Conference (AUPEC), 1-4, 2018 | 4 | 2018 |
| Design methodology considering evolution of statistical corners under long term degradation H Eslahi, D Mahajan, SA Albahrani, S Khandelwal Microelectronics Journal 91, 36-41, 2019 | 3 | 2019 |
| Analysis and modeling of OFF-state hysteretic losses in GaN power HEMTs DD Mahajan, S Khandelwal Solid-State Electronics 180, 107995, 2021 | 2 | 2021 |
| Robust Circuit Model for GaN-Based Radiation-Hard Electronics D Mahajan, SA Albahrani, J Hodges, S Khandelwal 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference …, 2018 | 2 | 2018 |
| A tunable input-impedance matching approach for long-term degradation effects of power amplifier H Eslahi, SA Albahrani, D Mahajan, S Khandelwal 2018 IEEE International RF and Microwave Conference (RFM), 151-154, 2018 | 1 | 2018 |
| 9th IEEE Power Electronics, Drives and Energy Systems (PEDES)-2020 16th–19th December, 2020 Author’s Information PP Nachankar, M Hiralal, PC Suryawanshi, DD Atkar, CL Narayana, ... Development 18, 99, 2020 | | 2020 |
| Non-Isolated, ZCT, High Step-UP, DC-DC Converter for PV Systems D Sadeghpour, A Davoodi, D Mahajan, SA Albahrani, MR Zolghadri, ... 2018 Australasian Universities Power Engineering Conference (AUPEC), 1-6, 2018 | | 2018 |
| 9th IEEE Power Electronics, Drives and Energy Systems (PEDES)-2020 16th–19th December, 2020 Oral Presentation Schedule PP Nachankar, M Hiralal, PC Suryawanshi, DD Atkar, CL Narayana, ... Development 18, 99, 0 | | |
| TA Karatsori, CG Theodorou, A. Tsormpatzoglou, S. Barraud, G. Ghibaudo, and CA Dimitriadis 424 D Mahajan, S Kargarrazi, D Schwantuschke, T Gneiting, DG Senesky, ... | | |
sourabh khandelwalUC Berkeley在 berkeley.edu 的电子邮件经过验证
