| MOSFET transistors fabricated with high permitivity TiO/sub 2/dielectrics SA Campbell, DC Gilmer, XC Wang, MT Hsieh, HS Kim, WL Gladfelter, ... IEEE Transactions on Electron Devices 44 (1), 104-109, 1997 | 577 | 1997 |
| Titanium dioxide (TiO2)-based gate insulators SA Campbell, HS Kim, DC Gilmer, B He, T Ma, WL Gladfelter IBM journal of research and development 43 (3), 383-392, 1999 | 400 | 1999 |
| Mixed-metal clusters WL Gladfelter, GL Geoffroy Advances in organometallic chemistry 18, 207-273, 1980 | 300 | 1980 |
| Chemical vapour deposition of the oxides of titanium, zirconium and hafnium for use as high‐k materials in microelectronic devices. A carbon‐free precursor for the … RC Smith, T Ma, N Hoilien, LY Tsung, MJ Bevan, L Colombo, J Roberts, ... Advanced Materials for Optics and Electronics 10 (3‐5), 105-114, 2000 | 288 | 2000 |
| Trimethylamine complexes of alane as precursors for the low-pressure chemical vapor deposition of aluminum WL Gladfelter, DC Boyd, KF Jensen Chemistry of Materials 1 (3), 339-343, 1989 | 234 | 1989 |
| Selective metalization by chemical vapor deposition WL Gladfelter Chemistry of materials 5 (10), 1372-1388, 1993 | 233 | 1993 |
| Probing polymer viscoelastic relaxations with temperature-controlled friction force microscopy JA Hammerschmidt, WL Gladfelter, G Haugstad Macromolecules 32 (10), 3360-3367, 1999 | 222 | 1999 |
| Does chemistry really matter in the chemical vapor deposition of titanium dioxide? Precursor and kinetic effects on the microstructure of polycrystalline films CJ Taylor, DC Gilmer, DG Colombo, GD Wilk, SA Campbell, J Roberts, ... Journal of the American Chemical Society 121 (22), 5220-5229, 1999 | 205 | 1999 |
| Ultrahigh vacuum metalorganic chemical vapor deposition growth and in situ characterization of epitaxial TiO2 films S Chen, MG Mason, HJ Gysling, GR Paz‐Pujalt, TN Blanton, T Castro, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 11 (5 …, 1993 | 181 | 1993 |
| Topochemical control in the solid-state conversion of cyclotrigallazane into nanocrystalline gallium nitride JW Hwang, JP Campbell, J Kozubowski, SA Hanson, JF Evans, ... Chemistry of materials 7 (3), 517-525, 1995 | 177 | 1995 |
| Structural and electrical characterization of TiO2 grown from titanium tetrakis‐isopropoxide (TTIP) and TTIP/H2O ambients J Yan, DC Gilmer, SA Campbell, WL Gladfelter, PG Schmid Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996 | 173 | 1996 |
| Organometallic metal clusters containing nitrosyl and nitrido ligands WL Gladfelter Advances in organometallic chemistry 24, 41-86, 1985 | 159 | 1985 |
| Grafting of high-density poly (ethylene glycol) monolayers on Si (111) XY Zhu, Y Jun, DR Staarup, RC Major, S Danielson, V Boiadjiev, ... Langmuir 17 (25), 7798-7803, 2001 | 151 | 2001 |
| Organometallic azides as precursors for aluminum nitride thin films DC Boyd, RT Haasch, DR Mantell, RK Schulze, JF Evans, WL Gladfelter Chemistry of Materials 1 (1), 119-124, 1989 | 132 | 1989 |
| A study of mixtures of HfO2 and TiO2 as high-k gate dielectrics F Chen, X Bin, C Hella, X Shi, WL Gladfelter, SA Campbell Microelectronic Engineering 72 (1-4), 263-266, 2004 | 129 | 2004 |
| Chemical vapour deposition: precursors, processes and applications M Ritala, H Parala, R Kanjolia, RD Dupuis, SE Alexandrov, SJC Irvine, ... Royal Society of Chemistry, 2008 | 127 | 2008 |
| . eta. 4-Bonding in (arene) ruthenium complexes of octamethylnaphthalene JW Hull Jr, WL Gladfelter Organometallics 3 (4), 605-613, 1984 | 125 | 1984 |
| Chemical vapor deposition of iron, ruthenium, and osmium FB McCormick, WL Gladfelter, Y Senzaki US Patent 5,372,849, 1994 | 123 | 1994 |
| Mechanistic aspects of a highly regioselective catalytic alkene hydroformylation using a rhodium chelating bis (phosphite) complex B Moasser, WL Gladfelter, DC Roe Organometallics 14 (8), 3832-3838, 1995 | 117 | 1995 |
| Pathways to nanocrystalline III-V (13–15) compound semiconductors RL Wells, WL Gladfelter Journal of Cluster Science 8, 217-238, 1997 | 111 | 1997 |
