| Critical thickness of GaN on AlN: impact of growth temperature and dislocation density P Sohi, D Martin, N Grandjean Semiconductor Science and Technology 32 (7), 075010, 2017 | 49 | 2017 |
| Alloy disorder limited mobility of InGaN two-dimensional electron gas P Sohi, JF Carlin, N Grandjean Applied Physics Letters 112 (26), 2018 | 27 | 2018 |
| P-GaN tri-gate MOS structure for normally-off GaN power transistors M Zhu, C Erine, J Ma, MS Nikoo, L Nela, P Sohi, E Matioli IEEE Electron Device Letters 42 (1), 82-85, 2020 | 26 | 2020 |
| Low-temperature growth of n++-GaN by metalorganic chemical vapor deposition to achieve low-resistivity tunnel junctions on blue light emitting diodes P Sohi, M Mosca, Y Chen, JF Carlin, N Grandjean Semiconductor Science and Technology 34 (1), 015002, 2018 | 13 | 2018 |
| Nonlocal Polarization Feedback in a Fractional Quantum Hall Ferromagnet S Hennel, BA Braem, S Baer, L Tiemann, P Sohi, D Wehrli, A Hofmann, ... Physical review letters 116 (13), 136804, 2016 | 8 | 2016 |
| High conductivity InAlN/GaN multi-channel two-dimensional electron gases P Sohi, JF Carlin, MD Rossell, R Erni, N Grandjean, E Matioli Semiconductor Science and Technology 36 (5), 055020, 2021 | 6 | 2021 |
| Beyond 8 THz displacement-field nano-switches for 5G and 6G communications MS Nikoo, T Wang, P Sohi, M Zhu, F Qaderi, RA Khadar, A Floriduz, ... 2021 IEEE International Electron Devices Meeting (IEDM), 4.5. 1-4.5. 4, 2021 | 4 | 2021 |
| p-NiO Junction Termination Extensions for High Voltage Vertical GaN Devices RA Khadar, A Floriduz, T Wang, C Erine, R van Erp, L Nela, ... 2021 33rd International Symposium on Power Semiconductor Devices and ICs …, 2021 | | 2021 |
| Impact of Strain and Alloy Disorder on the Electronic Properties of III-Nitride Based Two-dimensional Electron Gases P Sohi EPFL, 2019 | | 2019 |
| Gas pressure measurement device I Rousseau, P Sohi | | 2019 |
| Group ID U13020 MA Asencio Hurtado, U Choi, IO Elhagali, C Erine, A Floriduz, HC Gür, ... | | |
| Supplemental Material for “Non-local polarization feedback in a fractional quantum Hall ferromagnet” S Hennel, BA Braem, S Baer, L Tiemann, P Sohi, D Wehrli, A Hofmann, ... | | |
