| Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy DA Browne, EC Young, JR Lang, CA Hurni, JS Speck Journal of Vacuum Science & Technology A 30 (4), 2012 | 110 | 2012 |
| Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction R Yeluri, J Lu, CA Hurni, DA Browne, S Chowdhury, S Keller, JS Speck, ... Applied Physics Letters 106 (18), 2015 | 108 | 2015 |
| Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy DA Browne, B Mazumder, YR Wu, JS Speck Journal of Applied Physics 117 (18), 2015 | 80 | 2015 |
| pn junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents CA Hurni, O Bierwagen, JR Lang, BM McSkimming, CS Gallinat, ... Applied Physics Letters 97 (22), 2010 | 57 | 2010 |
| Effect of doping on the intersubband absorption in Si-and Ge-doped GaN/AlN heterostructures A Ajay, CB Lim, DA Browne, J Polaczyński, E Bellet-Amalric, J Bleuse, ... Nanotechnology 28 (40), 405204, 2017 | 29 | 2017 |
| Intersubband absorption in Si‐and Ge‐doped GaN/AlN heterostructures in self‐assembled nanowire and 2D layers A Ajay, CB Lim, DA Browne, J Polaczynski, E Bellet‐Amalric, ... physica status solidi (b) 254 (8), 1600734, 2017 | 28 | 2017 |
| Effect of doping on the far-infrared intersubband transitions in nonpolar m-plane GaN/AlGaN heterostructures CB Lim, A Ajay, C Bougerol, J Lähnemann, F Donatini, J Schörmann, ... Nanotechnology 27 (14), 145201, 2016 | 27 | 2016 |
| Vertical transport through AlGaN barriers in heterostructures grown by ammonia molecular beam epitaxy and metalorganic chemical vapor deposition DA Browne, MN Fireman, B Mazumder, LY Kuritzky, YR Wu, JS Speck Semiconductor Science and Technology 32 (2), 025010, 2017 | 16 | 2017 |
| Demonstration of isotype GaN/AlN/GaN heterobarrier diodes by NH3-molecular beam epitaxy MN Fireman, DA Browne, B Mazumder, JS Speck, UK Mishra Applied Physics Letters 106 (20), 2015 | 14 | 2015 |
| Templated epitaxial coatings on magnesium aluminate spinel using the sol-gel method D Browne, H Li, E Giorgi, S Dutta, J Biser, RP Vinci, HM Chan Journal of materials science 44 (5), 1180-1186, 2009 | 14 | 2009 |
| Near-and mid-infrared intersubband absorption in top-down GaN/AlN nano-and micro-pillars J Lähnemann, DA Browne, A Ajay, M Jeannin, A Vasanelli, JL Thomassin, ... Nanotechnology 30 (5), 054002, 2018 | 6 | 2018 |
| Isotype InGaN/GaN heterobarrier diodes by ammonia molecular beam epitaxy MN Fireman, DA Browne, UK Mishra, JS Speck Journal of Applied Physics 119 (5), 2016 | 6 | 2016 |
| Study of percolation transport in the InGaN/AlGaN LEDs with random alloy fluctuation YR Wu, CK Wu, CK Li, DA Browne, JS Speck Conference on Lasers and Electro-Optics/Pacific Rim, 25H2_2, 2015 | 3 | 2015 |
| Low ON-resistance and high current GaN vertical electron transistors with buried p-GaN layers R Yeluri, J Lu, D Browne, CA Hurni, S Chowdhury, S Keller, JS Speck, ... 72nd Device Research Conference, 253-254, 2014 | 3 | 2014 |
| Intersubband Optoelectronics Using III-Nitride Semiconductors CB Lim, A Ajay, J Lähnemann, DA Browne, E Monroy Handbook of GaN Semiconductor Materials and Devices, 615-644, 2017 | 1 | 2017 |
| III-Nitride Nanostructures for Intersubband Optoelectronics CB Lim, A Ajay, J Lähnemann, DA Browne, E Monroy III-Nitride Materials Devices and Nano-Structures, 77-113, 2017 | 1 | 2017 |
| Intersubband transitions in the THz using GaN quantum wells (Conference Presentation) CB Lim, A Ajay, C Bougerol, J Schörmann, DA Browne, M Beeler, ... Gallium Nitride Materials and Devices XII 10104, 49-49, 2017 | | 2017 |
| Widely power-tunable polarization-independent ultrafast mode-locked fiber laser using bulk InN as saturable absorber H Machhadani, J Zichi, C Bougerol, S Lequien, N Mollard, A Mukhtarova, ... | | 2017 |
| Growth and Carrier Transport Studies of III-Nitride Alloys by Ammonia Molecular Beam Epitaxy DA Browne University of California, Santa Barbara, 2015 | | 2015 |
| Investigation of Indium and Impurity Incorporation of InGaN Films on Polar, Nonpolar, and Semipolar GaN Orientations Grown by Ammonia MBE D Browne, E Young, J Speck Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box …, 2011 | | 2011 |
Jim SpeckProfessor of Materials, UCSB在 ucsb.edu 的电子邮件经过验证
