Alexander Azarov 个人学术档案

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	总计	2019 年至今
引用	2134	1322
h 指数	24	17
i10 指数	66	38

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Andrej KuznetsovProfessor of Physics, University of Oslo在 fys.uio.no 的电子邮件经过验证
Xiaolong Duinstitute of physics, Chinese Academy of Sciences在 aphy.iphy.ac.cn 的电子邮件经过验证
Augustinas GaleckasSMN / Department of Physics, University of Oslo, Norway在 fys.uio.no 的电子邮件经过验证
Eduard V. MonakhovProfessor在 fys.uio.no 的电子邮件经过验证
Sergei KucheyevPhysicist, Lawrence Livermore National Laboratory 在 llnl.gov 的电子邮件经过验证
Platon Karaseov (Карасев П.А.)Peter the Great St.Petersburg Polytechnic University (SPbPU), Department of Physical Electronics在 spbstu.ru 的电子邮件经过验证
Vishnukanthan VenkatachalapathyUniversity of Oslo在 smn.uio.no 的电子邮件经过验证
Anders HallenProfessor在 kth.se 的电子邮件经过验证
Andrei I. Titov (Титов АИ)Peter the Great St.Petersburg Polytechnic University (SPbPU), Department of Physical Electronics在 rphf.spbstu.ru 的电子邮件经过验证
Lasse VinesAssoc. Prof at University of Oslo在 fys.uio.no 的电子邮件经过验证
Øystein PrytzProfessor of Physics, University of Oslo, Centre Director, Ctr, for Materials Sci.and Nanotechnology在 fys.uio.no 的电子邮件经过验证
Calliope BaziotiSenior Researcher, Department of Physics, University of Oslo在 smn.uio.no 的电子邮件经过验证
Patricia Almeida CarvalhoSenior scientist, SINTEF, Norway在 sintef.no 的电子邮件经过验证
Protima RauwelProfessor, Head of Chair, Energy Applications Engineering, Institute of Technology, Estonian在 emu.ee 的电子邮件经过验证
Jacek JagielskiProfessor, Institute for Electronic Materials Technology, National Centre for Nuclear Research在 itme.edu.pl 的电子邮件经过验证
Edyta WyszkowskaNarodowe Centrum Badań Jądrowych在 ncbj.gov.pl 的电子邮件经过验证
Flyura DjurabekovaUniversity of Helsinki在 helsinki.fi 的电子邮件经过验证
Cyprian MieszczynskiNational Centre for Nuclear Research在 ncbj.gov.pl 的电子邮件经过验证
Junlei ZhaoSouthern University of Science and Technology在 sustech.edu.cn 的电子邮件经过验证
Alexander PolyakovNUST MISIS在 misis.ru 的电子邮件经过验证

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Alexander Azarov

Department of Physics, SMN, University of Oslo, Norway

在 smn.uio.no 的电子邮件经过验证

Defects and diffusion in semiconductors Radiation Effects ion beam analysis SIMS


标题按引用次数排序按年份排序按标题排序	引用次数引用次数	年份
Oxygen vacancies: The origin of -type conductivity in ZnO L Liu, Z Mei, A Tang, A Azarov, A Kuznetsov, QK Xue, X Du Physical Review B 93 (23), 235305, 2016	303	2016
Probing Defects in Nitrogen-Doped Cu2O J Li, Z Mei, L Liu, H Liang, A Azarov, A Kuznetsov, Y Liu, A Ji, Q Meng, ... Scientific reports 4, 7240, 2014	129	2014
Understanding phase separation in ZnCdO by a combination of structural and optical analysis V Venkatachalapathy, A Galeckas, M Trunk, T Zhang, A Azarov, ... Physical Review B 83 (12), 125315, 2011	65	2011
Cubic silicon carbide as a potential photovoltaic material M Syväjärvi, Q Ma, V Jokubavicius, A Galeckas, J Sun, X Liu, M Jansson, ... Solar Energy Materials and Solar Cells 145, 104-108, 2016	60	2016
Effect of implanted species on thermal evolution of ion-induced defects in ZnO AY Azarov, A Hallén, XL Du, P Rauwel, AY Kuznetsov, BG Svensson Journal of Applied Physics 115 (7), 2014	55	2014
Disorder-induced ordering in gallium oxide polymorphs A Azarov, C Bazioti, V Venkatachalapathy, P Vajeeston, E Monakhov, ... Physical Review Letters 128 (1), 015704, 2022	54	2022
Energy spike effects in ion-bombarded GaN SO Kucheyev, AY Azarov, AI Titov, PA Karaseov, TM Kuchumova Journal of Physics D: Applied Physics 42 (8), 085309, 2009	51	2009
Effect of the density of collision cascades on ion implantation damage in ZnO AY Azarov, SO Kucheyev, AI Titov, PA Karaseov Journal of Applied Physics 102 (8), 2007	50	2007
Damage buildup in Si under bombardment with MeV heavy atomic and molecular ions AI Titov, SO Kucheyev, VS Belyakov, AY Azarov Journal of Applied Physics 90 (8), 3867-3872, 2001	42	2001
Mechanism for the molecular effect in Si bombarded with clusters of light atoms AI Titov, AY Azarov, LM Nikulina, SO Kucheyev Physical Review B 73 (6), 064111, 2006	41	2006
Formation of surface amorphous layers in semiconductors under low-energy light-ion irradiation: Experiment and theory AI Titov, VS Belyakov, AY Azarov Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2003	38	2003
Comparison of low-and room-temperature damage formation in Ar ion implanted GaN and ZnO E Wendler, W Wesch, AY Azarov, N Catarino, A Redondo-Cubero, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2013	36	2013
Optical activity and defect/dopant evolution in ZnO implanted with Er A Azarov, A Galeckas, A Hallén, A Kuznetsov, E Monakhov, BG Svensson Journal of Applied Physics 118 (12), 2015	34	2015
Comparative study of radiation tolerance of GaN and Ga2O3 polymorphs AI Titov, KV Karabeshkin, AI Struchkov, VI Nikolaev, A Azarov, DS Gogova, ... Vacuum 200, 111005, 2022	33	2022
Analytical methods and instruments for micro-and nanomaterials HH Radamson, A Hallén, I Sychugov, A Azarov Springer, 2023	30	2023
Density of displacement cascades for cluster ions: An algorithm of calculation and the influence on damage formation in ZnO and GaN PA Karaseov, AY Azarov, AI Titov, SO Kucheyev Semiconductors 43 (6), 691-700, 2009	30*	2009
Universal radiation tolerant semiconductor A Azarov, JG Fernández, J Zhao, F Djurabekova, H He, R He, Ø Prytz, ... Nature Communications 14 (1), 4855, 2023	29	2023
Phosphorus separation from metallurgical-grade silicon by magnesium alloying and acid leaching M Zhu, A Azarov, E Monakhov, K Tang, J Safarian Separation and Purification Technology 240, 116614, 2020	28	2020
Crucial role of implanted atoms on dynamic defect annealing in ZnO AY Azarov, E Wendler, AY Kuznetsov, BG Svensson Applied Physics Letters 104 (5), 2014	28	2014
Ge redistribution in SiO2/SiGe structures under thermal oxidation: Dynamics and predictions E Long, A Azarov, F Kløw, A Galeckas, A Yu Kuznetsov, S Diplas Journal of Applied Physics 111 (2), 2012	28	2012

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