Germanium/perovskite heterostructure for high-performance and broadband photodetector from visible to infrared telecommunication band W Hu, H Cong, W Huang, Y Huang, L Chen, A Pan, C Xue Light: Science & Applications 8 (1), 106, 2019 | 214 | 2019 |
Enhanced optical Kerr nonlinearity of graphene/Si hybrid waveguide Q Feng, H Cong, B Zhang, W Wei, Y Liang, S Fang, T Wang, J Zhang Applied Physics Letters 114 (7), 2019 | 131 | 2019 |
Plasma Treatment for Nitrogen‐Doped 3D Graphene Framework by a Conductive Matrix with Sulfur for High‐Performance Li–S Batteries L Duan, L Zhao, H Cong, X Zhang, W Lü, C Xue Small 15 (7), 1804347, 2019 | 104 | 2019 |
Ultrathin broadband germanium–graphene hybrid photodetector with high performance F Yang, H Cong, K Yu, L Zhou, N Wang, Z Liu, C Li, Q Wang, B Cheng ACS Applied Materials & Interfaces 9 (15), 13422-13429, 2017 | 99 | 2017 |
Silicon based GeSn pin photodetector for SWIR detection H Cong, C Xue, J Zheng, F Yang, K Yu, Z Liu, X Zhang, B Cheng, Q Wang IEEE Photonics Journal 8 (5), 1-6, 2016 | 99 | 2016 |
GeSn pin photodetectors with GeSn layer grown by magnetron sputtering epitaxy J Zheng, S Wang, Z Liu, H Cong, C Xue, C Li, Y Zuo, B Cheng, Q Wang Applied Physics Letters 108 (3), 2016 | 80 | 2016 |
Multilayer graphene–GeSn quantum well heterostructure SWIR light source H Cong, F Yang, C Xue, K Yu, L Zhou, N Wang, B Cheng, Q Wang Small 14 (17), 1704414, 2018 | 50 | 2018 |
Highly Enhanced SWIR Image Sensors Based on Ge1–xSnx–Graphene Heterostructure Photodetector F Yang, K Yu, H Cong, C Xue, B Cheng, N Wang, L Zhou, Z Liu, Q Wang ACS Photonics 6 (5), 1199-1206, 2019 | 48 | 2019 |
High-responsivity vertical-illumination Si/Ge uni-traveling-carrier photodiodes based on silicon-on-insulator substrate C Li, CL Xue, Z Liu, H Cong, B Cheng, Z Hu, X Guo, W Liu Scientific reports 6 (1), 27743, 2016 | 33 | 2016 |
Broadband Photodetector Based on Inorganic Perovskite CsPbBr3/GeSn Heterojunction H Cong, X Chu, F Wan, Z Chu, X Wang, Y Ma, J Jiang, L Shen, J You, ... Small Methods 5 (8), 2100517, 2021 | 32 | 2021 |
O-band and C/L-band III-V quantum dot lasers monolithically grown on Ge and Si substrate Q Feng, W Wei, B Zhang, H Wang, J Wang, H Cong, T Wang, J Zhang Applied Sciences 9 (3), 385, 2019 | 32 | 2019 |
O-band InAs/GaAs quantum-dot microcavity laser on Si (001) hollow substrate by in-situ hybrid epitaxy B Zhang, WQ Wei, JH Wang, HL Wang, Z Zhao, L Liu, H Cong, Q Feng, ... AIP Advances 9 (1), 2019 | 30 | 2019 |
Phosphorus-free 1.5 µm InAs quantum-dot microdisk lasers on metamorphic InGaAs/SOI platform WQ Wei, JY Zhang, JH Wang, H Cong, JJ Guo, ZH Wang, HX Xu, T Wang, ... Optics letters 45 (7), 2042-2045, 2020 | 27 | 2020 |
1310 nm InAs quantum-dot microdisk lasers on SOI by hybrid epitaxy B Zhang, WQ Wei, JH Wang, JY Zhang, H Cong, Q Feng, T Wang, ... Optics Express 27 (14), 19348-19358, 2019 | 21 | 2019 |
Defect-free high Sn-content GeSn on insulator grown by rapid melting growth Z Liu, H Cong, F Yang, C Li, J Zheng, C Xue, Y Zuo, B Cheng, Q Wang Scientific Reports 6 (1), 38386, 2016 | 21 | 2016 |
Characterization of a Ge1−x−ySiySnx/Ge1−xSnx multiple quantum well structure grown by sputtering epitaxy J Zheng, S Wang, H Cong, CS Fenrich, Z Liu, C Xue, C Li, Y Zuo, ... Optics letters 42 (8), 1608-1611, 2017 | 16 | 2017 |
Theoretical study of the optical gain characteristics of a Ge1− xSnx alloy for a short-wave infrared laser DL Zhang, BW Cheng, CL Xue, X Zhang, H Cong, Z Liu, GZ Zhang, ... Chinese Physics B 24 (2), 024211, 2015 | 13 | 2015 |
Silicon based GeSn pin photodetector with longwave cutoff at 2.3 μm H Cong, CL Xue, J Zheng, F Yang, K Yu, BW Cheng, Z Liu, QM Wang 2016 IEEE 13th International Conference on Group IV Photonics (GFP), 106-107, 2016 | 9 | 2016 |
Epitaxial growth of InAs/GaAs quantum dots on {113}-faceted Ge/Si (001) hollow substrate JY Zhang, WQ Wei, JH Wang, H Cong, Q Feng, ZH Wang, T Wang, ... Optical Materials Express 10 (4), 1045-1052, 2020 | 8 | 2020 |
High-speed waveguide-integrated Ge/Si avalanche photodetector H Cong, C Xue, Z Liu, C Li, B Cheng, Q Wang Chinese Physics B 25 (5), 058503, 2016 | 7 | 2016 |