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Hui Cong(丛慧)
Hui Cong(丛慧)
在 semi.ac.cn 的电子邮件经过验证
标题
引用次数
引用次数
年份
Germanium/perovskite heterostructure for high-performance and broadband photodetector from visible to infrared telecommunication band
W Hu, H Cong, W Huang, Y Huang, L Chen, A Pan, C Xue
Light: Science & Applications 8 (1), 106, 2019
2142019
Enhanced optical Kerr nonlinearity of graphene/Si hybrid waveguide
Q Feng, H Cong, B Zhang, W Wei, Y Liang, S Fang, T Wang, J Zhang
Applied Physics Letters 114 (7), 2019
1312019
Plasma Treatment for Nitrogen‐Doped 3D Graphene Framework by a Conductive Matrix with Sulfur for High‐Performance Li–S Batteries
L Duan, L Zhao, H Cong, X Zhang, W Lü, C Xue
Small 15 (7), 1804347, 2019
1042019
Ultrathin broadband germanium–graphene hybrid photodetector with high performance
F Yang, H Cong, K Yu, L Zhou, N Wang, Z Liu, C Li, Q Wang, B Cheng
ACS Applied Materials & Interfaces 9 (15), 13422-13429, 2017
992017
Silicon based GeSn pin photodetector for SWIR detection
H Cong, C Xue, J Zheng, F Yang, K Yu, Z Liu, X Zhang, B Cheng, Q Wang
IEEE Photonics Journal 8 (5), 1-6, 2016
992016
GeSn pin photodetectors with GeSn layer grown by magnetron sputtering epitaxy
J Zheng, S Wang, Z Liu, H Cong, C Xue, C Li, Y Zuo, B Cheng, Q Wang
Applied Physics Letters 108 (3), 2016
802016
Multilayer graphene–GeSn quantum well heterostructure SWIR light source
H Cong, F Yang, C Xue, K Yu, L Zhou, N Wang, B Cheng, Q Wang
Small 14 (17), 1704414, 2018
502018
Highly Enhanced SWIR Image Sensors Based on Ge1–xSnx–Graphene Heterostructure Photodetector
F Yang, K Yu, H Cong, C Xue, B Cheng, N Wang, L Zhou, Z Liu, Q Wang
ACS Photonics 6 (5), 1199-1206, 2019
482019
High-responsivity vertical-illumination Si/Ge uni-traveling-carrier photodiodes based on silicon-on-insulator substrate
C Li, CL Xue, Z Liu, H Cong, B Cheng, Z Hu, X Guo, W Liu
Scientific reports 6 (1), 27743, 2016
332016
Broadband Photodetector Based on Inorganic Perovskite CsPbBr3/GeSn Heterojunction
H Cong, X Chu, F Wan, Z Chu, X Wang, Y Ma, J Jiang, L Shen, J You, ...
Small Methods 5 (8), 2100517, 2021
322021
O-band and C/L-band III-V quantum dot lasers monolithically grown on Ge and Si substrate
Q Feng, W Wei, B Zhang, H Wang, J Wang, H Cong, T Wang, J Zhang
Applied Sciences 9 (3), 385, 2019
322019
O-band InAs/GaAs quantum-dot microcavity laser on Si (001) hollow substrate by in-situ hybrid epitaxy
B Zhang, WQ Wei, JH Wang, HL Wang, Z Zhao, L Liu, H Cong, Q Feng, ...
AIP Advances 9 (1), 2019
302019
Phosphorus-free 1.5 µm InAs quantum-dot microdisk lasers on metamorphic InGaAs/SOI platform
WQ Wei, JY Zhang, JH Wang, H Cong, JJ Guo, ZH Wang, HX Xu, T Wang, ...
Optics letters 45 (7), 2042-2045, 2020
272020
1310 nm InAs quantum-dot microdisk lasers on SOI by hybrid epitaxy
B Zhang, WQ Wei, JH Wang, JY Zhang, H Cong, Q Feng, T Wang, ...
Optics Express 27 (14), 19348-19358, 2019
212019
Defect-free high Sn-content GeSn on insulator grown by rapid melting growth
Z Liu, H Cong, F Yang, C Li, J Zheng, C Xue, Y Zuo, B Cheng, Q Wang
Scientific Reports 6 (1), 38386, 2016
212016
Characterization of a Ge1−x−ySiySnx/Ge1−xSnx multiple quantum well structure grown by sputtering epitaxy
J Zheng, S Wang, H Cong, CS Fenrich, Z Liu, C Xue, C Li, Y Zuo, ...
Optics letters 42 (8), 1608-1611, 2017
162017
Theoretical study of the optical gain characteristics of a Ge1− xSnx alloy for a short-wave infrared laser
DL Zhang, BW Cheng, CL Xue, X Zhang, H Cong, Z Liu, GZ Zhang, ...
Chinese Physics B 24 (2), 024211, 2015
132015
Silicon based GeSn pin photodetector with longwave cutoff at 2.3 μm
H Cong, CL Xue, J Zheng, F Yang, K Yu, BW Cheng, Z Liu, QM Wang
2016 IEEE 13th International Conference on Group IV Photonics (GFP), 106-107, 2016
92016
Epitaxial growth of InAs/GaAs quantum dots on {113}-faceted Ge/Si (001) hollow substrate
JY Zhang, WQ Wei, JH Wang, H Cong, Q Feng, ZH Wang, T Wang, ...
Optical Materials Express 10 (4), 1045-1052, 2020
82020
High-speed waveguide-integrated Ge/Si avalanche photodetector
H Cong, C Xue, Z Liu, C Li, B Cheng, Q Wang
Chinese Physics B 25 (5), 058503, 2016
72016
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