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Bo Cai
Bo Cai
在 njupt.edu.cn 的电子邮件经过验证
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年份
CsPbX3 Quantum Dots for Lighting and Displays: Room‐Temperature Synthesis, Photoluminescence Superiorities, Underlying Origins and White Light‐Emitting …
X Li, Y Wu, S Zhang, B Cai, Y Gu, J Song, H Zeng
Advanced Functional Materials 26 (15), 2435-2445, 2016
23372016
50‐Fold EQE Improvement up to 6.27% of Solution‐Processed All‐Inorganic Perovskite CsPbBr3 QLEDs via Surface Ligand Density Control
J Li, L Xu, T Wang, J Song, J Chen, J Xue, Y Dong, B Cai, Q Shan, B Han, ...
Advanced materials 29 (5), 1603885, 2017
11962017
In Situ Passivation of PbBr64– Octahedra toward Blue Luminescent CsPbBr3 Nanoplatelets with Near 100% Absolute Quantum Yield
Y Wu, C Wei, X Li, Y Li, S Qiu, W Shen, B Cai, Z Sun, D Yang, Z Deng, ...
ACS Energy Letters 3 (9), 2030-2037, 2018
4382018
Antimonene oxides: emerging tunable direct bandgap semiconductor and novel topological insulator
S Zhang, W Zhou, Y Ma, J Ji, B Cai, SA Yang, Z Zhu, Z Chen, H Zeng
Nano letters 17 (6), 3434-3440, 2017
2852017
Efficient and bright white light-emitting diodes based on single-layer heterophase halide perovskites
J Chen, J Wang, X Xu, J Li, J Song, S Lan, S Liu, B Cai, B Han, JT Precht, ...
Nature Photonics 15 (3), 238-244, 2021
2632021
Double-protected all-inorganic perovskite nanocrystals by crystalline matrix and silica for triple-modal anti-counterfeiting codes
L Xu, J Chen, J Song, J Li, J Xue, Y Dong, B Cai, Q Shan, B Han, H Zeng
ACS applied materials & interfaces 9 (31), 26556-26564, 2017
2522017
A bilateral interfacial passivation strategy promoting efficiency and stability of perovskite quantum dot light-emitting diodes
L Xu, J Li, B Cai, J Song, F Zhang, T Fang, H Zeng
Nature communications 11 (1), 3902, 2020
2432020
A promising two-dimensional solar cell donor: Black arsenic–phosphorus monolayer with 1.54 eV direct bandgap and mobility exceeding 14,000 cm2 V− 1 s− 1
M Xie, S Zhang, B Cai, Y Huang, Y Zou, B Guo, Y Gu, H Zeng
Nano Energy 28, 433-439, 2016
2292016
Shining emitter in a stable host: design of halide perovskite scintillators for X-ray imaging from commercial concept
F Cao, D Yu, W Ma, X Xu, B Cai, YM Yang, S Liu, L He, Y Ke, S Lan, ...
ACS nano 14 (5), 5183-5193, 2019
2282019
GeSe monolayer semiconductor with tunable direct band gap and small carrier effective mass
Y Hu, S Zhang, S Sun, M Xie, B Cai, H Zeng
Applied Physics Letters 107 (12), 2015
1842015
Hydrogenated arsenenes as planar magnet and Dirac material
S Zhang, Y Hu, Z Hu, B Cai, H Zeng
Applied Physics Letters 107 (2), 2015
1762015
Advances of 2D bismuth in energy sciences
X Liu, S Zhang, S Guo, B Cai, SA Yang, F Shan, M Pumera, H Zeng
Chemical Society Reviews 49 (1), 263-285, 2020
1552020
Efficient blue perovskite light‐emitting diodes boosted by 2D/3D energy cascade channels
F Zhang, B Cai, J Song, B Han, B Zhang, H Zeng
Advanced Functional Materials 30 (27), 2001732, 2020
1422020
Semiconductor-topological insulator transition of two-dimensional SbAs induced by biaxial tensile strain
S Zhang, M Xie, B Cai, H Zhang, Y Ma, Z Chen, Z Zhu, Z Hu, H Zeng
Physical Review B 93 (24), 245303, 2016
1412016
Boosting Charge Transport in BiVO4 Photoanode for Solar Water Oxidation
Y Lu, Y Yang, X Fan, Y Li, D Zhou, B Cai, L Wang, K Fan, K Zhang
Advanced Materials 34 (8), 2108178, 2022
1402022
Two‐dimensional metal halide perovskites: theory, synthesis, and optoelectronics
C Huo, B Cai, Z Yuan, B Ma, H Zeng
Small Methods 1 (3), 1600018, 2017
1392017
Two-dimensional BX (X= P, As, Sb) semiconductors with mobilities approaching graphene
M Xie, S Zhang, B Cai, Z Zhu, Y Zou, H Zeng
Nanoscale 8 (27), 13407-13413, 2016
1392016
Two-dimensional GeS with tunable electronic properties via external electric field and strain
S Zhang, N Wang, S Liu, S Huang, W Zhou, B Cai, M Xie, Q Yang, X Chen, ...
Nanotechnology 27 (27), 274001, 2016
1162016
Stable, Efficient Red Perovskite Light‐Emitting Diodes by (α, δ)‐CsPbI3 Phase Engineering
B Han, B Cai, Q Shan, J Song, J Li, F Zhang, J Chen, T Fang, Q Ji, X Xu, ...
Advanced Functional Materials 28 (47), 1804285, 2018
1152018
Two-dimensional SiP: an unexplored direct band-gap semiconductor
S Zhang, S Guo, Y Huang, Z Zhu, B Cai, M Xie, W Zhou, H Zeng
2D Materials 4 (1), 015030, 2016
1022016
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