Blue-light emission from GaN self-assembled quantum dots due to giant piezoelectric effect F Widmann, J Simon, B Daudin, G Feuillet, JL Rouviere, NT Pelekanos, ... Physical Review B 58 (24), R15989, 1998 | 350 | 1998 |
A GaAs polariton light-emitting diode operating near room temperature SI Tsintzos, NT Pelekanos, G Konstantinidis, Z Hatzopoulos, PG Savvidis Nature 453 (7193), 372-375, 2008 | 316 | 2008 |
Growth kinetics and optical properties of self-organized GaN quantum dots F Widmann, B Daudin, G Feuillet, Y Samson, JL Rouvière, N Pelekanos Journal of Applied Physics 83 (12), 7618-7624, 1998 | 294 | 1998 |
Giant electric fields in unstrained GaN single quantum wells R Langer, J Simon, V Ortiz, NT Pelekanos, A Barski, R Andre, ... Applied physics letters 74 (25), 3827-3829, 1999 | 271 | 1999 |
Direct comparison of recombination dynamics in cubic and hexagonal GaN/AlN quantum dots J Simon, NT Pelekanos, C Adelmann, E Martinez-Guerrero, R André, ... Physical Review B 68 (3), 035312, 2003 | 260 | 2003 |
Quasi-two-dimensional excitons in (Zn, Cd) Se/ZnSe quantum wells: Reduced exciton–LO-phonon coupling due to confinement effects NT Pelekanos, J Ding, M Hagerott, AV Nurmikko, H Luo, N Samarth, ... Physical Review B 45 (11), 6037, 1992 | 233 | 1992 |
Self-assembled InGaN quantum dots grown by molecular-beam epitaxy C Adelmann, J Simon, G Feuillet, NT Pelekanos, B Daudin, G Fishman Applied Physics Letters 76 (12), 1570-1572, 2000 | 211 | 2000 |
Improved quality GaN grown by molecular beam epitaxy using In as a surfactant F Widmann, B Daudin, G Feuillet, N Pelekanos, JL Rouvière Applied physics letters 73 (18), 2642-2644, 1998 | 186 | 1998 |
Zinc‐blende MnTe: Epilayers and quantum well structures SM Durbin, J Han, S O, M Kobayashi, DR Menke, RL Gunshor, Q Fu, ... Applied physics letters 55 (20), 2087-2089, 1989 | 145 | 1989 |
Room-temperature exciton absorption in (Zn, Cd) Se/ZnSe quantum wells at blue-green wavelengths J Ding, N Pelekanos, AV Nurmikko, H Luo, N Samarth Applied physics letters 57 (27), 2885-2887, 1990 | 124 | 1990 |
Self-assembled zinc blende GaN quantum dots grown by molecular-beam epitaxy E Martínez-Guerrero, C Adelmann, F Chabuel, J Simon, NT Pelekanos, ... Applied Physics Letters 77 (6), 809-811, 2000 | 112 | 2000 |
Preferential nucleation of GaN quantum dots at the edge of AlN threading dislocations JL Rouviere, J Simon, N Pelekanos, B Daudin, G Feuillet Applied physics letters 75 (17), 2632-2634, 1999 | 110 | 1999 |
High-reflectivity GaN/GaAlN Bragg mirrors at blue/green wavelengths grown by molecular beam epitaxy R Langer, A Barski, J Simon, NT Pelekanos, O Konovalov, R Andre, ... Applied physics letters 74 (24), 3610-3612, 1999 | 92 | 1999 |
Room temperature observation of biexcitons in exfoliated WS2 monolayers I Paradisanos, S Germanis, NT Pelekanos, C Fotakis, E Kymakis, ... Applied Physics Letters 110 (19), 2017 | 80 | 2017 |
Spontaneous polarization effects in quantum wells J Simon, R Langer, A Barski, NT Pelekanos Physical Review B 61 (11), 7211, 2000 | 74 | 2000 |
All-dielectric GaN microcavity: Strong coupling and lasing at room temperature KS Daskalakis, PS Eldridge, G Christmann, E Trichas, R Murray, ... Applied Physics Letters 102 (10), 2013 | 73 | 2013 |
InGaN (0001) alloys grown in the entire composition range by plasma assisted molecular beam epitaxy E Iliopoulos, A Georgakilas, E Dimakis, A Adikimenakis, K Tsagaraki, ... physica status solidi (a) 203 (1), 102-105, 2006 | 70 | 2006 |
Room temperature GaAs exciton-polariton light emitting diode SI Tsintzos, PG Savvidis, G Deligeorgis, Z Hatzopoulos, NT Pelekanos Applied Physics Letters 94 (7), 2009 | 68 | 2009 |
Micro-Raman characterization of heterostructures AG Kontos, YS Raptis, NT Pelekanos, A Georgakilas, E Bellet-Amalric, ... Physical Review B—Condensed Matter and Materials Physics 72 (15), 155336, 2005 | 66 | 2005 |
Residual strain and piezoelectric effects in passivated GaAs/AlGaAs core-shell nanowires M Hocevar, LT Thanh Giang, R Songmuang, M den Hertog, L Besombes, ... Applied Physics Letters 102 (19), 2013 | 57 | 2013 |