| Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition W Jang, H Jeon, C Kang, H Song, J Park, H Kim, H Seo, M Leskela, ... physica status solidi (a) 211 (9), 2166-2171, 2014 | 62 | 2014 |
| Detection of oxygen ion drift in Pt/Al2O3/TiO2/Pt RRAM using interface-free single-layer graphene electrodes H Jeon, J Park, W Jang, H Kim, S Ahn, KJ Jeon, H Seo, H Jeon Carbon 75, 209-216, 2014 | 49 | 2014 |
| Stabilized resistive switching behaviors of a Pt/TaOx/TiN RRAM under different oxygen contents H Jeon, J Park, W Jang, H Kim, C Kang, H Song, H Kim, H Seo, H Jeon physica status solidi (a) 211 (9), 2189-2194, 2014 | 42 | 2014 |
| Deposition temperature dependence of titanium oxide thin films grown by remote‐plasma atomic layer deposition J Lee, SJ Lee, WB Han, H Jeon, J Park, W Jang, CS Yoon, H Jeon physica status solidi (a) 210 (2), 276-284, 2013 | 37 | 2013 |
| The effect of plasma power on the properties of low‐temperature silicon nitride deposited by RPALD for a gate spacer W Jang, H Jeon, H Song, H Kim, J Park, H Kim, H Jeon physica status solidi (a) 212 (12), 2785-2790, 2015 | 33 | 2015 |
| Resistive switching of a TaOx/TaON double layer via ionic control of carrier tunneling H Jeon, J Park, W Jang, H Kim, C Kang, H Song, H Seo, H Jeon Applied Physics Letters 104 (15), 2014 | 26 | 2014 |
| Atomic layer deposition: overview and applications S Shin, G Ham, H Jeon, J Park, W Jang, H Jeon Korean Journal of Materials Research 23 (8), 405-422, 2013 | 25 | 2013 |
| Resistive switching behaviors of Cu/TaOx/TiN device with combined oxygen vacancy/copper conductive filaments H Jeon, J Park, W Jang, H Kim, H Song, H Kim, H Seo, H Jeon Current Applied Physics 15 (9), 1005-1009, 2015 | 24 | 2015 |
| Characteristics of low-κ SiOC films deposited via atomic layer deposition J Lee, W Jang, H Kim, S Shin, Y Kweon, K Lee, H Jeon Thin Solid Films 645, 334-339, 2018 | 23 | 2018 |
| Leakage current suppression in spatially controlled Si-doped ZrO2 for capacitors using atomic layer deposition K Lee, W Jang, H Kim, H Lim, B Kim, H Seo, H Jeon Thin Solid Films 657, 1-7, 2018 | 19 | 2018 |
| Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition H Kim, H Song, C Shin, K Kim, W Jang, H Kim, S Shin, H Jeon Journal of Vacuum Science & Technology A 35 (1), 2017 | 18 | 2017 |
| The effect of ozone concentration during atomic layer deposition on the properties of ZrO2 films for capacitor applications H Song, H Jeon, C Shin, S Shin, W Jang, J Park, J Chang, JH Choi, Y Kim, ... Thin Solid Films 619, 317-322, 2016 | 15 | 2016 |
| Remote plasma atomic layer deposition of silicon nitride with bis (dimethylaminomethyl-silyl) trimethylsilyl amine and N2 plasma for gate spacer W Jang, H Kim, Y Kweon, C Jung, H Cho, S Shin, H Kim, K Lim, H Jeon, ... Journal of Vacuum Science & Technology A 36 (3), 2018 | 14 | 2018 |
| Characteristics of a nickel thin film and formation of nickel silicide by using remote plasma atomic layer deposition with Ni( i Pr-DAD)2 J Kim, W Jang, J Park, H Jeon, H Kim, J Yuh, H Jeon Journal of the Korean Physical Society 66, 821-827, 2015 | 14 | 2015 |
| Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp) W (CO) 2 (NO) for Cu diffusion barrier H Kim, J Park, H Jeon, W Jang, H Jeon, J Yuh Journal of Vacuum Science & Technology A 33 (5), 2015 | 10 | 2015 |
| Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma C Kang, H Jeon, W Jang, H Song, H Kim, H Kim, H Jeon physica status solidi (a) 212 (3), 674-679, 2015 | 10 | 2015 |
| Nonlinear and complementary resistive switching behaviors of Au/Ti/TaOx/TiN devices dependent on Ti thicknesses H Jeon, J Park, H Kim, H Kim, W Jang, H Song, H Jeon Journal of Vacuum Science & Technology B 33 (5), 2015 | 9 | 2015 |
| Spatially confined electric field effect for improved resistive switching behavior of a Ni/Ta-embedded TaO x/NiSi device J Park, H Jeon, H Kim, W Jang, H Seo, H Jeon RSC Advances 4 (105), 61064-61067, 2014 | 9 | 2014 |
| Endurance improvement due to rapid thermal annealing (RTA) of a TaO x thin film in an oxygen ambient J Hong, W Jang, H Song, C Kang, H Jeon Journal of the Korean Physical Society 66, 721-725, 2015 | 5 | 2015 |
| Improvement of thermal stability of nickel silicide film using NH3 plasma treatment J Park, H Jeon, H Kim, W Jang, J Kim, C Kang, J Yuh, H Jeon Japanese Journal of Applied Physics 53 (9), 095506, 2014 | 5 | 2014 |
