| Demonstration of directed XOR/XNOR logic gates using two cascaded microring resonators L Zhang, R Ji, L Jia, L Yang, P Zhou, Y Tian, P Chen, Y Lu, Z Jiang, Y Liu, ... Optics letters 35 (10), 1620-1622, 2010 | 179 | 2010 |
| Four-channel reconfigurable optical add-drop multiplexer based on photonic wire waveguide M Geng, L Jia, L Zhang, L Yang, P Chen, T Wang, Y Liu Optics express 17 (7), 5502-5516, 2009 | 138 | 2009 |
| Diagnostic Accuracy of Intracellular Mycobacterium tuberculosis Detection for Tuberculous Meningitis G Feng, M Shi, L Ma, P Chen, B Wang, M Zhang, X Chang, X Su, Y Yang, ... American journal of respiratory and critical care medicine 189 (4), 475-481, 2014 | 87 | 2014 |
| Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes LC Le, DG Zhao, DS Jiang, L Li, LL Wu, P Chen, ZS Liu, ZC Li, YM Fan, ... Applied Physics Letters 101 (25), 2012 | 69 | 2012 |
| Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes D Zhao, J Yang, Z Liu, P Chen, J Zhu, D Jiang, Y Shi, H Wang, L Duan, ... Journal of Semiconductors 38 (5), 051001, 2017 | 66 | 2017 |
| Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films J Yang, DG Zhao, DS Jiang, P Chen, ZS Liu, LC Le, XJ Li, XG He, JP Liu, ... Journal of Applied Physics 115 (16), 2014 | 55 | 2014 |
| Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells W Liu, DG Zhao, DS Jiang, P Chen, ZS Liu, JJ Zhu, M Shi, DM Zhao, X Li, ... Optics express 23 (12), 15935-15943, 2015 | 44 | 2015 |
| Room-temperature continuous-wave operation of GaN-based blue-violet laser diodes with a lifetime longer than 1000 h F Liang, J Yang, D Zhao, Z Liu, J Zhu, P Chen, D Jiang, Y Shi, H Wang, ... Journal of Semiconductors 40 (2), 022801, 2019 | 39 | 2019 |
| Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness W Liu, DG Zhao, DS Jiang, P Chen, ZS Liu, JJ Zhu, M Shi, DM Zhao, X Li, ... Journal of Alloys and Compounds 625, 266-270, 2015 | 38 | 2015 |
| Suppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking layer in InGaN-based blue-violet laser diodes LC Le, DG Zhao, DS Jiang, P Chen, ZS Liu, J Yang, XG He, XJ Li, JP Liu, ... Optics Express 22 (10), 11392-11398, 2014 | 34 | 2014 |
| A 357.9 nm GaN/AlGaN multiple quantum well ultraviolet laser diode J Yang, D Zhao, Z Liu, F Liang, P Chen, L Duan, H Wang, YA Shi J. Semicond 43 (1), 010501, 2022 | 32 | 2022 |
| GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature F Liang, D Zhao, Z Liu, P Chen, J Yang, L Duan, Y Shi, H Wang Journal of Semiconductors 42 (11), 112801, 2021 | 31 | 2021 |
| GaN high electron mobility transistors with AlInN back barriers XG He, DG Zhao, DS Jiang, JJ Zhu, P Chen, ZS Liu, LC Le, J Yang, XJ Li, ... Journal of Alloys and Compounds 662, 16-19, 2016 | 31 | 2016 |
| Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness J Yang, DG Zhao, DS Jiang, P Chen, JJ Zhu, ZS Liu, LC Le, XJ Li, XG He, ... Journal of Applied Physics 117 (5), 2015 | 29 | 2015 |
| High efficient GaN-based laser diodes with tunnel junction MX Feng, JP Liu, SM Zhang, DS Jiang, ZC Li, K Zhou, DY Li, LQ Zhang, ... Applied Physics Letters 103 (4), 2013 | 28 | 2013 |
| Shockley–Read–Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes W Liu, D Zhao, D Jiang, P Chen, Z Liu, J Zhu, X Li, F Liang, J Liu, L Zhang, ... Journal of Physics D: Applied Physics 49 (14), 145104, 2016 | 27 | 2016 |
| Strong visible and infrared photoluminescence from Er-implanted silicon nitride films WC Ding, D Hu, J Zheng, P Chen, BW Cheng, JZ Yu, QM Wang Journal of Physics D: Applied Physics 41 (13), 135101, 2008 | 27 | 2008 |
| Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition XG He, DG Zhao, DS Jiang, ZS Liu, P Chen, LC Le, J Yang, XJ Li, ... Thin Solid Films 564, 135-139, 2014 | 26 | 2014 |
| Effect of V-defects on the performance deterioration of InGaN/GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness LC Le, DG Zhao, DS Jiang, L Li, LL Wu, P Chen, ZS Liu, J Yang, XJ Li, ... Journal of Applied Physics 114 (14), 2013 | 26 | 2013 |
| Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer P Chen, MX Feng, DS Jiang, DG Zhao, ZS Liu, L Li, LL Wu, LC Le, JJ Zhu, ... Journal of Applied Physics 112 (11), 2012 | 26 | 2012 |
