| High-κ perovskite membranes as insulators for two-dimensional transistors JK Huang, Y Wan, J Shi, J Zhang, Z Wang, W Wang, N Yang, Y Liu, ... Nature 605 (7909), 262-267, 2022 | 152 | 2022 |
| 7.6 V Threshold Voltage High-Performance Normally-Off Al2O3/GaN MOSFET Achieved by Interface Charge Engineering Q Zhou, L Liu, A Zhang, B Chen, Y Jin, Y Shi, Z Wang, W Chen, B Zhang IEEE Electron Device Letters 37 (2), 165-168, 2015 | 112 | 2015 |
| Evaluating the traditional Chinese medicine (TCM) officially recommended in China for COVID-19 using ontology-based side-effect prediction framework (OSPF) and deep learning Z Wang, L Li, M Song, J Yan, J Shi, Y Yao Journal of Ethnopharmacology 272 (23 May 2021), 113957, 2021 | 66 | 2021 |
| An Ontology‐Based Artificial Intelligence Model for Medicine Side‐Effect Prediction: Taking Traditional Chinese Medicine as an Example Y Yao, Z Wang, L Li, K Lu, R Liu, Z Liu, J Yan Computational and mathematical methods in medicine 2019 (1), 8617503, 2019 | 31 | 2019 |
| Numerical investigation on AlGaN/GaN short channel HEMT with AlGaN/InGaN/AlGaN quantum well plate Z Wang, J Cao, R Sun, F Wang, Y Yao Superlattices and Microstructures 120, 753-758, 2018 | 23 | 2018 |
| Approaching high-accuracy side effect prediction of traditional Chinese medicine compound prescription using network embedding and deep learning Z Wang, L Li, J Yan, Y Yao IEEE Access 8, 82493-82499, 2020 | 22 | 2020 |
| Charge storage impact on input capacitance in p-GaN gate AlGaN/GaN power high-electron-mobility transistors F Wang, W Chen, X Li, R Sun, X Xu, Y Xin, Z Wang, Y Shi, Y Xia, C Liu, ... Journal of Physics D: Applied Physics 53 (30), 305106, 2020 | 21 | 2020 |
| Prolonging the cycling lifetime of lithium metal batteries with a monolithic and inorganic-rich solid electrolyte interphase J Yang, M Li, Z Sun, X Lian, Y Wang, Y Niu, C Jiang, Y Luo, Y Liu, Z Tian, ... Energy & Environmental Science 16 (9), 3837-3846, 2023 | 20 | 2023 |
| Simulation study of an ultralow switching loss p-GaN gate HEMT with dynamic charge storage mechanism F Wang, W Chen, X Xu, R Sun, Z Wang, Y Xia, Y Xin, C Liu, Q Zhou, ... IEEE Transactions on Electron Devices 68 (1), 175-183, 2020 | 19 | 2020 |
| On the Baliga’s figure-of-merits (BFOM) enhancement of a novel GaN nano-pillar vertical field effect transistor (FET) with 2DEG channel and patterned substrate Z Wang, Z Wang, Z Zhang, D Yang, Y Yao Nanoscale Research Letters 14, 1-10, 2019 | 19 | 2019 |
| A high-performance tunable LED-compatible current regulator using an integrated voltage nanosensor Z Wang, S Wang, Z Zhang, C Wang, D Yang, X Chen, Z Wang, J Cao, ... IEEE Transactions on Electron Devices 66 (4), 1917-1923, 2019 | 19 | 2019 |
| Simulation study on AlGaN/GaN diode with Γ-shaped anode for ultra-low turn-on voltage Z Wang, W Chen, F Wang, J Cao, R Sun, K Ren, Y Luo, S Guo, Z Wang, ... Superlattices and Microstructures 117, 330-335, 2018 | 18 | 2018 |
| A machine learning-assisted model for GaN ohmic contacts regarding the fabrication processes Z Wang, L Li, Y Yao IEEE Transactions on Electron Devices 68 (5), 2212-2219, 2021 | 17 | 2021 |
| An analytical model on the gate control capability in p-GaN Gate AlGaN/GaN high-electron-mobility transistors considering buffer acceptor traps F Wang, W Chen, R Sun, Z Wang, Q Zhou, B Zhang Journal of Physics D: Applied Physics 54 (9), 095107, 2020 | 16 | 2020 |
| Proposal of a novel recess-free enhancement-mode AlGaN/GaN HEMT with field-assembled structure: a simulation study Z Wang Journal of Computational Electronics 18 (4), 1251-1258, 2019 | 16 | 2019 |
| Proposal of a novel enhancement type AlGaN/GaN HEMT using recess-free field coupled gate Z Wang, J Cao, F Wang, W Chen, B Zhang, S Guo, Y Yao Superlattices and Microstructures 122, 343-348, 2018 | 16 | 2018 |
| Design and optimization on a novel high-performance ultra-thin barrier AlGaN/GaN power HEMT with local charge compensation trench Z Wang, Z Zhang, S Wang, C Chen, Z Wang, Y Yao Applied Sciences 9 (15), 3054, 2019 | 15 | 2019 |
| Simulation study of high‐reverse blocking AlGaN/GaN power rectifier with an integrated lateral composite buffer diode Z Wang, F Wang, S Guo, Z Wang Micro & Nano Letters 12 (9), 660-663, 2017 | 14 | 2017 |
| Jellybean Quantum Dots in Silicon for Qubit Coupling and On‐Chip Quantum Chemistry Z Wang, MK Feng, S Serrano, W Gilbert, RCC Leon, T Tanttu, P Mai, ... Advanced Materials 35 (19), 2208557, 2023 | 12 | 2023 |
| Simulation design of uniform low turn-on voltage and high reverse blocking AlGaN/GaN power field effect rectifier with trench heterojunction anode F Wang, W Chen, Z Wang, R Sun, J Wei, X Li, Y Shi, X Jin, X Xu, N Chen, ... Superlattices and Microstructures 105, 132-138, 2017 | 12 | 2017 |
Bo Zhang （张波）,ProfessorUniv. of Electron. Sci. & Technol. of China在 uestc.edu.cn 的电子邮件经过验证
