Engineering III–V semiconductor nanowires for device applications J Wong‐Leung, I Yang, Z Li, SK Karuturi, L Fu, HH Tan, C Jagadish Advanced Materials 32 (18), 1904359, 2020 | 56 | 2020 |
Broadband GaAsSb nanowire array photodetectors for filter-free multispectral imaging Z Li, S Trendafilov, F Zhang, MS Allen, JW Allen, SU Dev, W Pan, Y Yu, ... Nano Letters 21 (17), 7388-7395, 2021 | 44 | 2021 |
Multiwavelength single nanowire InGaAs/InP quantum well light-emitting diodes I Yang, Z Li, J Wong-Leung, Y Zhu, Z Li, N Gagrani, L Li, MN Lockrey, ... Nano Letters 19 (6), 3821-3829, 2019 | 33 | 2019 |
Radial growth evolution of InGaAs/InP multi-quantum-well nanowires grown by selective-area metal organic vapor-phase epitaxy I Yang, X Zhang, C Zheng, Q Gao, Z Li, L Li, MN Lockrey, H Nguyen, ... ACS nano 12 (10), 10374-10382, 2018 | 33 | 2018 |
Highly uniform InGaAs/InP quantum well nanowire array-based light emitting diodes I Yang, S Kim, M Niihori, A Alabadla, Z Li, L Li, MN Lockrey, DY Choi, ... Nano Energy 71, 104576, 2020 | 31 | 2020 |
Reducing Zn diffusion in single axial junction InP nanowire solar cells for improved performance Z Li, I Yang, L Li, Q Gao, JS Chong, Z Li, MN Lockrey, HH Tan, ... Progress in Natural Science: Materials International 28 (2), 178-182, 2018 | 23 | 2018 |
In situ passivation of GaAsSb nanowires for enhanced infrared photoresponse Z Li, X Yuan, Q Gao, I Yang, L Li, P Caroff, M Allen, J Allen, HH Tan, ... Nanotechnology 31 (24), 244002, 2020 | 22 | 2020 |
Effect of doped nitrogen on the crystallization behaviors of Ge2Sb2Te5 I Yang, K Do, HJ Chang, DH Ko, H Sohn Journal of The Electrochemical Society 157 (4), H483, 2010 | 21 | 2010 |
Semiconductor device and method for fabricating the same WS Jung, C Kang, P SeungWoo, I Yang, JOO Kyungjoong US Patent 9,484,355, 2016 | 15 | 2016 |
Monocrystalline InP thin films with tunable surface morphology and energy band gap Y Lee, I Yang, HH Tan, C Jagadish, SK Karuturi ACS applied materials & interfaces 12 (32), 36380-36388, 2020 | 14 | 2020 |
Cathode for lithium secondary battery and lithium secondary battery comprising the same JH Kim, HK Lim, IJ Kim, Y In-Seok, SJ Park US Patent 9,178,209, 2015 | 13 | 2015 |
Apparatus and method for enhancing impregnation with electrolyte in secondary battery IJ Kim, JH Kim, HK Lim, Y In-Seok, SJ Park US Patent 8,728,650, 2014 | 11 | 2014 |
Semiconductor device and method of fabricating the same WS Jung, C Kang, P SeungWoo, I Yang, JOO Kyungjoong US Patent 9,698,158, 2017 | 9 | 2017 |
Room temperature GaAsSb array photodetectors Z Li, S Trendafilov, M Allen, J Allen, A Alabadla, Q Gao, X Yuan, I Yang, ... 2018 IEEE Research and Applications of Photonics In Defense Conference …, 2018 | 1 | 2018 |
Erratum: In situ passivation of GaAsSb nanowires for enhanced infrared photoresponse (vol 31, 244002, 2020) Z Li, X Yuan, Q Gao, I Yang, L Li, P Caroff, M Allen, J Allen, HH Tan, ... Institute of Physics Publishing, 2020 | | 2020 |
SHIM and Its Applications X Yang PQDT-Global, 2019 | | 2019 |
Cathode for lithium secondary battery and lithium secondary battery comprising the same JH Kim, HK Lim, IJ Kim, Y In-Seok, SJ Park US Patent 9,379,377, 2016 | | 2016 |
Crystallization Behavior of Laser Induced Ge2Sb2Te5 and N-doped Ge2Sb2Te5 Thin Films K Do, I Yang, DH Ko, MH Cho, H Sohn ECS Meeting Abstracts, 11, 2009 | | 2009 |
The study of workfunction measurement method for bilayer metal gate electrode using XPS E Jung, CJ Yim, IS Yang, HJ Chang, SW Cho, MH Cho, DH Ko ECS Transactions 13 (1), 187, 2008 | | 2008 |
금속 게이트 전극으로의 활용을 위한 이중 금속층의 전기적 특성 연구 EJ Jeong, IS Yang, DH Go Proceedings of the Korean Institute of Electrical and Electronic Material …, 2007 | | 2007 |