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Inseok Yang, Ph.D.
Inseok Yang, Ph.D.
Device Architecture Engineer, Meta Reality Labs
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标题
引用次数
引用次数
年份
Engineering III–V semiconductor nanowires for device applications
J Wong‐Leung, I Yang, Z Li, SK Karuturi, L Fu, HH Tan, C Jagadish
Advanced Materials 32 (18), 1904359, 2020
562020
Broadband GaAsSb nanowire array photodetectors for filter-free multispectral imaging
Z Li, S Trendafilov, F Zhang, MS Allen, JW Allen, SU Dev, W Pan, Y Yu, ...
Nano Letters 21 (17), 7388-7395, 2021
442021
Multiwavelength single nanowire InGaAs/InP quantum well light-emitting diodes
I Yang, Z Li, J Wong-Leung, Y Zhu, Z Li, N Gagrani, L Li, MN Lockrey, ...
Nano Letters 19 (6), 3821-3829, 2019
332019
Radial growth evolution of InGaAs/InP multi-quantum-well nanowires grown by selective-area metal organic vapor-phase epitaxy
I Yang, X Zhang, C Zheng, Q Gao, Z Li, L Li, MN Lockrey, H Nguyen, ...
ACS nano 12 (10), 10374-10382, 2018
332018
Highly uniform InGaAs/InP quantum well nanowire array-based light emitting diodes
I Yang, S Kim, M Niihori, A Alabadla, Z Li, L Li, MN Lockrey, DY Choi, ...
Nano Energy 71, 104576, 2020
312020
Reducing Zn diffusion in single axial junction InP nanowire solar cells for improved performance
Z Li, I Yang, L Li, Q Gao, JS Chong, Z Li, MN Lockrey, HH Tan, ...
Progress in Natural Science: Materials International 28 (2), 178-182, 2018
232018
In situ passivation of GaAsSb nanowires for enhanced infrared photoresponse
Z Li, X Yuan, Q Gao, I Yang, L Li, P Caroff, M Allen, J Allen, HH Tan, ...
Nanotechnology 31 (24), 244002, 2020
222020
Effect of doped nitrogen on the crystallization behaviors of Ge2Sb2Te5
I Yang, K Do, HJ Chang, DH Ko, H Sohn
Journal of The Electrochemical Society 157 (4), H483, 2010
212010
Semiconductor device and method for fabricating the same
WS Jung, C Kang, P SeungWoo, I Yang, JOO Kyungjoong
US Patent 9,484,355, 2016
152016
Monocrystalline InP thin films with tunable surface morphology and energy band gap
Y Lee, I Yang, HH Tan, C Jagadish, SK Karuturi
ACS applied materials & interfaces 12 (32), 36380-36388, 2020
142020
Cathode for lithium secondary battery and lithium secondary battery comprising the same
JH Kim, HK Lim, IJ Kim, Y In-Seok, SJ Park
US Patent 9,178,209, 2015
132015
Apparatus and method for enhancing impregnation with electrolyte in secondary battery
IJ Kim, JH Kim, HK Lim, Y In-Seok, SJ Park
US Patent 8,728,650, 2014
112014
Semiconductor device and method of fabricating the same
WS Jung, C Kang, P SeungWoo, I Yang, JOO Kyungjoong
US Patent 9,698,158, 2017
92017
Room temperature GaAsSb array photodetectors
Z Li, S Trendafilov, M Allen, J Allen, A Alabadla, Q Gao, X Yuan, I Yang, ...
2018 IEEE Research and Applications of Photonics In Defense Conference …, 2018
12018
Erratum: In situ passivation of GaAsSb nanowires for enhanced infrared photoresponse (vol 31, 244002, 2020)
Z Li, X Yuan, Q Gao, I Yang, L Li, P Caroff, M Allen, J Allen, HH Tan, ...
Institute of Physics Publishing, 2020
2020
SHIM and Its Applications
X Yang
PQDT-Global, 2019
2019
Cathode for lithium secondary battery and lithium secondary battery comprising the same
JH Kim, HK Lim, IJ Kim, Y In-Seok, SJ Park
US Patent 9,379,377, 2016
2016
Crystallization Behavior of Laser Induced Ge2Sb2Te5 and N-doped Ge2Sb2Te5 Thin Films
K Do, I Yang, DH Ko, MH Cho, H Sohn
ECS Meeting Abstracts, 11, 2009
2009
The study of workfunction measurement method for bilayer metal gate electrode using XPS
E Jung, CJ Yim, IS Yang, HJ Chang, SW Cho, MH Cho, DH Ko
ECS Transactions 13 (1), 187, 2008
2008
금속 게이트 전극으로의 활용을 위한 이중 금속층의 전기적 특성 연구
EJ Jeong, IS Yang, DH Go
Proceedings of the Korean Institute of Electrical and Electronic Material …, 2007
2007
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