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Lucas Spejo
Lucas Spejo
在 ch.abb.com 的电子邮件经过验证
标题
引用次数
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年份
Non-linear Raman shift-stress behavior in top-down fabricated highly strained silicon nanowires
LB Spejo, JL Arrieta-Concha, MV Puydinger dos Santos, AD Barros, ...
Journal of Applied Physics 128 (4), 2020
82020
Life-cycle energy demand comparison of medium voltage Silicon IGBT and Silicon Carbide MOSFET power semiconductor modules in railway traction applications
LB Spejo, I Akor, M Rahimo, RA Minamisawa
Power Electronic Devices and Components 6, 100050, 2023
52023
Energy saving potential of WBG-commercial power converters in different applications
LB Spejo, E Nonis, N Schulz, RA Minamisawa
2023 25th European Conference on Power Electronics and Applications (EPE'23 …, 2023
12023
Interface Trap Density of Commercial 1.7 kV SiC Power MOSFETs
LB Spejo, S Lucidi, MVP Dos Santos, JA Diniz, RA Minamisawa
2023 37th Symposium on Microelectronics Technology and Devices (SBMicro), 1-4, 2023
12023
Estimation of Energy-Saving Potential Using Commercial SiC Power Converters
LB Spejo, T Thekemuriyil, RA Minamisawa
Energies 17 (18), 4570, 2024
2024
Single nanofabrication step of low series resistance nanowire-based devices for giant piezoresistance characterization
KS Chi, LB Spejo, RA Minamisawa, MVP Dos Santos
2024 38th Symposium on Microelectronics Technology and Devices (SBMicro), 1-4, 2024
2024
Development of a double pulse test plataform for switching loss investigation in emerging SiC MOSFET technology
DRF Silva, JF Guerreiro, LB Spejo, MVP Dos Santos
2024 38th Symposium on Microelectronics Technology and Devices (SBMicro), 1-4, 2024
2024
Performance Assessment of 10 kV SiC MOSFET and PiN Diode in 3L-NPC Converter Topology
LB Spejo, L Knoll, RA Minamisawa
PCIM Europe 2024; International Exhibition and Conference for Power …, 2024
2024
Oxide Reliability of Gate Biased Trench Si-IGBTs Irradiated with Protons and Neutrons
LB Spejo, S Rehm, V Novak, B Ammann, P Würsch, R Stark, L Knoll, ...
2024 36th International Symposium on Power Semiconductor Devices and ICs …, 2024
2024
In situ electron-beam-induced mechanical loading and fracture of suspended strained silicon nanowires
L B Spejo, JL Arrieta-Concha, MV Puydinger dos Santos, A D Barros, ...
Journal of Vacuum Science & Technology B 41 (2), 2023
2023
Performance Comparison of 6.5 kV SiC PiN Diode with 6.5 kV SiC JBS and Si Diodes
V Sundaramoorthy, A Mihaila, L Spejo, RA Minamisawa, L Knoll
Materials Science Forum 1062, 588-592, 2022
2022
Stress characterization of strained silicon nanostructures by Raman spectroscopy: Caracterização do estresse mecânico de nanoestruturas de silício tensionado por espectroscopia …
LB Spejo
Universidade Estadual de Campinas (UNICAMP). Faculdade de Engenharia …, 2020
2020
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