Temperature dependent electrical characterisation of Pt/HfO2/n-GaN metal-insulator-semiconductor (MIS) Schottky diodes A Shetty, B Roul, S Mukundan, L Mohan, G Chandan, KJ Vinoy, ... AIP Advances 5 (9), 2015 | 61 | 2015 |
Semipolar and nonpolar GaN epi-films grown on m-sapphire by plasma assisted molecular beam epitaxy S Mukundan, L Mohan, G Chandan, B Roul, SB Krupanidhi Journal of Applied Physics 116 (20), 2014 | 45 | 2014 |
Enhanced UV detection by non-polar epitaxial GaN films S Mukundan, B Roul, A Shetty, G Chandan, L Mohan, SB Krupanidhi AIP Advances 5 (12), 2015 | 33 | 2015 |
Barrier height inhomogeneity in electrical transport characteristics of InGaN/GaN heterostructure interfaces B Roul, S Mukundan, G Chandan, L Mohan, SB Krupanidhi AIP Advances 5 (3), 2015 | 24 | 2015 |
Conduct disorder L Mohan, M Yilanli, S Ray | 22 | 2017 |
Trap modulated photoresponse of InGaN/Si isotype heterojunction at zero-bias G Chandan, S Mukundan, L Mohan, B Roul, SB Krupanidhi Journal of Applied Physics 118 (2), 2015 | 21 | 2015 |
High indium non-polar InGaN clusters with infrared sensitivity grown by PAMBE S Mukundan, L Mohan, G Chandan, B Roul, SB Krupanidhi, S Shinde, ... AIP Advances 5 (3), 2015 | 12 | 2015 |
Growth and electrical transport properties of InGaN/GaN heterostructures grown by PAMBE N Sinha, B Roul, S Mukundan, G Chandan, L Mohan, VM Jali, ... Materials Research Bulletin 61, 539-543, 2015 | 10 | 2015 |
Temperature dependent electrical properties of AlN/Si heterojunction L Mohan, B Roul, SB Krupanidhi Journal of Applied Physics 124 (20), 2018 | 9 | 2018 |
Double Gaussian distribution of barrier height observed in densely packed GaN nanorods over Si (111) heterostructures L Mohan, G Chandan, S Mukundan, B Roul, SB Krupanidhi Journal of Applied Physics 116 (23), 2014 | 9 | 2014 |
Plasmonic enhancement of photocurrent in GaN based UV photodetectors A Shetty, KJ Sundar, B Roul, S Mukundan, G Chandan, L Mohan, ... 2014 IEEE 2nd International Conference on Emerging Electronics (ICEE), 1-4, 2014 | 9 | 2014 |
Structural and optical characterization of nonpolar (10–10) m-InN/m-GaN epilayers grown by PAMBE S Mukundan, G Chandan, L Mohan, B Roul, SB Krupanidhi Journal of Crystal Growth 433, 74-79, 2016 | 5 | 2016 |
Impact of Nitridation on Structural and Optical Properties of Epitaxial GaN Films Grown on M-Plane Sapphire by PAMBE S Mukundan, L Mohan, G Chandan, B Roul, SB Krupanidhi MRS Online Proceedings Library (OPL) 1736, mrsf14-1736-t11-02, 2015 | 1 | 2015 |
III-Nitride Thin Films and Nanostructures on Si (111) by Plasma Assisted Molecular Beam Epitaxy L Mohan | | 2019 |
Growth and Characterization of a-plane In0. 2Ga0. 8N/GaN hetrostructures on r-Sapphire S Mukundan, L Mohan, G Chandan, B Roul, SB Krupanidhi MRS Online Proceedings Library (OPL) 1736, mrsf14-1736-t11-03, 2014 | | 2014 |
Pt/n-GaN metal-semiconductor and Pt/HfO2/n-GaN metal-insulator-semiconductor Schottky diodes A Shetty, B Roul, S Mukundan, G Chandan, L Mohan, KJ Vinoy, ... MRS Online Proceedings Library (OPL) 1736, mrsf14-1736-t02-08, 2014 | | 2014 |