| Atomistic modeling of amorphization and recrystallization in silicon L Pelaz, LA Marqués, M Aboy, J Barbolla, GH Gilmer Applied physics letters 82 (13), 2038-2040, 2003 | 89 | 2003 |
| Microscopic description of the irradiation-induced amorphization in silicon LA Marqués, L Pelaz, M Aboy, L Enríquez, J Barbolla Physical review letters 91 (13), 135504, 2003 | 87 | 2003 |
| Front-end process modeling in silicon L Pelaz, LA Marqués, M Aboy, P López, I Santos The European Physical Journal B 72, 323-359, 2009 | 45 | 2009 |
| Atomistic modeling of deactivation and reactivation mechanisms in high-concentration boron profiles M Aboy, L Pelaz, LA Marqués, J Barbolla, A Mokhberi, Y Takamura, ... Applied physics letters 83 (20), 4166-4168, 2003 | 45 | 2003 |
| Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon M Aboy, L Pelaz, LA Marqués, P López, J Barbolla, R Duffy Journal of applied physics 97 (10), 2005 | 43 | 2005 |
| The laser annealing induced phase transition in silicon: a molecular dynamics study LA Marqués, L Pelaz, M Aboy, J Barbolla Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2004 | 38 | 2004 |
| Atomistic analysis of defect evolution and transient enhanced diffusion in silicon M Aboy, L Pelaz, LA Marqués, L Enriquez, J Barbolla Journal of applied physics 94 (2), 1013-1018, 2003 | 33 | 2003 |
| Molecular dynamics simulations of damage production by thermal spikes in Ge P López, L Pelaz, I Santos, LA Marqués, M Aboy Journal of Applied Physics 111 (3), 2012 | 32 | 2012 |
| Modeling of defects, dopant diffusion and clustering in silicon M Aboy, I Santos, L Pelaz, LA Marqués, P López Journal of Computational Electronics 13, 40-58, 2014 | 31 | 2014 |
| Recrystallization of atomically balanced amorphous pockets in Si: A source of point defects LA Marqués, L Pelaz, P López, I Santos, M Aboy Physical Review B 76 (15), 153201, 2007 | 28 | 2007 |
| Kinetics of large B clusters in crystalline and preamorphized silicon M Aboy, L Pelaz, E Bruno, S Mirabella, S Boninelli Journal of Applied Physics 110 (7), 2011 | 27 | 2011 |
| Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices L Pelaz, R Duffy, M Aboy, L Marques, P Lopez, I Santos, BJ Pawlak, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 26 | 2008 |
| Physical insight into boron activation and redistribution during annealing after low-temperature solid phase epitaxial regrowth M Aboy, L Pelaz, P López, LA Marqués, R Duffy, VC Venezia Applied physics letters 88 (19), 2006 | 25 | 2006 |
| Insights on the atomistic origin of X and W photoluminescence lines in c-Si from ab initio simulations I Santos, M Aboy, P López, LA Marqués, L Pelaz Journal of Physics D: Applied Physics 49 (7), 075109, 2016 | 23 | 2016 |
| Molecular dynamics characterization of as-implanted damage in silicon I Santos, LA Marqués, L Pelaz, P López, M Aboy, J Barbolla Materials Science and Engineering: B 124, 372-375, 2005 | 22 | 2005 |
| Liquid− liquid equilibria for acetic anhydride+ selected alkanes M Aboy, S Villa, N Riesco, JA González, I García de la Fuente, JC Cobos Journal of Chemical & Engineering Data 47 (4), 950-953, 2002 | 20 | 2002 |
| Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing G Fisicaro, L Pelaz, M Aboy, P Lopez, M Italia, K Huet, F Cristiano, Z Essa, ... Applied Physics Express 7 (2), 021301, 2014 | 17 | 2014 |
| Structural transformations from point to extended defects in silicon: A molecular dynamics study LA Marqués, L Pelaz, I Santos, P López, M Aboy Physical Review B 78 (19), 193201, 2008 | 17 | 2008 |
| W and X photoluminescence centers in crystalline Si: chasing candidates at atomic level through multiscale simulations M Aboy, I Santos, P López, LA Marqués, L Pelaz Journal of Electronic Materials 47 (9), 5045-5049, 2018 | 16 | 2018 |
| Atomistic modeling of dopant implantation and annealing in Si: damage evolution, dopant diffusion and activation L Pelaz, LA Marqués, M Aboy, P López, J Barbolla Computational materials science 33 (1-3), 92-105, 2005 | 16 | 2005 |
