| Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells W Bergbauer, M Strassburg, C Kölper, N Linder, C Roder, J Lähnemann, ... Nanotechnology 21 (30), 305201, 2010 | 182 | 2010 |
| Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments U Jahn, J Lähnemann, C Pfüller, O Brandt, S Breuer, B Jenichen, ... Physical Review B 85 (4), 045323, 2012 | 147 | 2012 |
| Luminescence associated with stacking faults in GaN J Lähnemann, U Jahn, O Brandt, T Flissikowski, P Dogan, HT Grahn Journal of Physics D: Applied Physics 47 (42), 423001, 2014 | 146 | 2014 |
| Direct experimental determination of the spontaneous polarization of GaN J Lähnemann, O Brandt, U Jahn, C Pfüller, C Roder, P Dogan, F Grosse, ... Physical Review B 86 (8), 081302, 2012 | 136 | 2012 |
| Self-assisted nucleation and vapor–solid growth of InAs nanowires on bare Si (111) E Dimakis, J Lähnemann, U Jahn, S Breuer, M Hilse, L Geelhaar, ... Crystal Growth & Design 11 (9), 4001-4008, 2011 | 117 | 2011 |
| hyperspy/hyperspy: Release v1. 7.3 F De La Peña, E Prestat, V Tonaas Fauske, P Burdet, J Lähnemann, ... Zenodo, 0 | 113* | |
| Continuous-flow MOVPE of Ga-polar GaN column arrays and core–shell LED structures X Wang, S Li, MS Mohajerani, J Ledig, HH Wehmann, M Mandl, ... Crystal Growth & Design 13 (8), 3475-3480, 2013 | 91 | 2013 |
| Metal-exchange catalysis in the growth of sesquioxides: Towards heterostructures of transparent oxide semiconductors P Vogt, O Brandt, H Riechert, J Lähnemann, O Bierwagen Physical review letters 119 (19), 196001, 2017 | 88 | 2017 |
| Photoelectrochemical properties of (In,Ga)N nanowires for water splitting investigated by in situ electrochemical mass spectroscopy J Kamimura, P Bogdanoff, J Lähnemann, C Hauswald, L Geelhaar, ... Journal of the American Chemical Society 135 (28), 10242-10245, 2013 | 72 | 2013 |
| Current path in light emitting diodes based on nanowire ensembles F Limbach, C Hauswald, J Lähnemann, M Wölz, O Brandt, A Trampert, ... Nanotechnology 23 (46), 465301, 2012 | 72 | 2012 |
| N-face GaN nanorods: Continuous-flux MOVPE growth and morphological properties W Bergbauer, M Strassburg, C Kölper, N Linder, C Roder, J Lähnemann, ... Journal of Crystal Growth 315 (1), 164-167, 2011 | 61 | 2011 |
| UV photosensing characteristics of nanowire-based GaN/AlN superlattices J Lähnemann, M Den Hertog, P Hille, M De La Mata, T Fournier, ... Nano letters 16 (5), 3260-3267, 2016 | 60 | 2016 |
| Stacking faults as quantum wells in nanowires: Density of states, oscillator strength, and radiative efficiency P Corfdir, C Hauswald, JK Zettler, T Flissikowski, J Lähnemann, ... Physical Review B 90 (19), 195309, 2014 | 57 | 2014 |
| Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure J Lähnemann, O Brandt, C Pfüller, T Flissikowski, U Jahn, E Luna, ... Physical Review B 84 (15), 155303, 2011 | 57 | 2011 |
| Bias-controlled spectral response in GaN/AlN single-nanowire ultraviolet photodetectors M Spies, MI Den Hertog, P Hille, J Schörmann, J Polaczyński, B Gayral, ... Nano letters 17 (7), 4231-4239, 2017 | 50 | 2017 |
| Photoelectrochemical properties of GaN photoanodes with cobalt phosphate catalyst for solar water splitting in neutral electrolyte J Kamimura, P Bogdanoff, FF Abdi, J Lähnemann, R van de Krol, ... The Journal of Physical Chemistry C 121 (23), 12540-12545, 2017 | 50 | 2017 |
| Nonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5–10 THz band CB Lim, A Ajay, C Bougerol, B Haas, J Schörmann, M Beeler, ... Nanotechnology 26 (43), 435201, 2015 | 45 | 2015 |
| Intersubband transitions in nonpolar GaN/Al(Ga)N heterostructures in the short-and mid-wavelength infrared regions CB Lim, M Beeler, A Ajay, J Lähnemann, E Bellet-Amalric, C Bougerol, ... Journal of Applied Physics 118 (1), 014309, 2015 | 40 | 2015 |
| Near-infrared intersubband photodetection in GaN/AlN nanowires J Lähnemann, A Ajay, MI Den Hertog, E Monroy Nano letters 17 (11), 6954-6960, 2017 | 39 | 2017 |
| Formation of high-quality GaN microcrystals by pendeoepitaxial overgrowth of GaN nanowires on Si (111) by molecular beam epitaxy P Dogan, O Brandt, C Pfüller, J Lähnemann, U Jahn, C Roder, ... Crystal Growth & Design 11 (10), 4257-4260, 2011 | 37 | 2011 |
Oliver BrandtSenior scientist, Paul-Drude-Institut für Festkörperelektronik在 pdi-berlin.de 的电子邮件经过验证
