| Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study C Coletti, S Forti, A Principi, KV Emtsev, AA Zakharov, KM Daniels, ... Physical Review B—Condensed Matter and Materials Physics 88 (15), 155439, 2013 | 122 | 2013 |
| Characterization and modelling of the ion-irradiation induced disorder in 6H-SiC and 3C-SiC single crystals A Debelle, L Thomé, D Dompoint, A Boulle, F Garrido, J Jagielski, ... Journal of Physics D: Applied Physics 43 (45), 455408, 2010 | 102 | 2010 |
| Combined experimental and computational study of the recrystallization process induced by electronic interactions of swift heavy ions with silicon carbide crystals A Debelle, M Backman, L Thome, WJ Weber, M Toulemonde, S Mylonas, ... Physical Review B—Condensed Matter and Materials Physics 86 (10), 100102, 2012 | 101 | 2012 |
| Large area quasi-free standing monolayer graphene on 3C-SiC (111) C Coletti, KV Emtsev, AA Zakharov, T Ouisse, D Chaussende, U Starke Applied Physics Letters 99 (8), 2011 | 89 | 2011 |
| Coupled heat transfer and fluid dynamics modeling of high-temperature SiC solution growth F Mercier, JM Dedulle, D Chaussende, M Pons Journal of Crystal Growth 312 (2), 155-163, 2010 | 71 | 2010 |
| A comprehensive study of SiC growth processes in a VPE reactor T Chassagne, G Ferro, D Chaussende, F Cauwet, Y Monteil, J Bouix Thin Solid Films 402 (1-2), 83-89, 2002 | 67 | 2002 |
| High temperature solution growth and characterization of Cr2AlC single crystals T Ouisse, E Sarigiannidou, O Chaix-Pluchery, H Roussel, B Doisneau, ... Journal of crystal growth 384, 88-95, 2013 | 60 | 2013 |
| Control of the Supersaturation in the CF− PVT Process for the Growth of Silicon Carbide Crystals: Research and Applications D Chaussende, M Ucar, L Auvray, F Baillet, M Pons, R Madar Crystal Growth & Design 5 (4), 1539-1544, 2005 | 57 | 2005 |
| Prospects for 3C-SiC bulk crystal growth D Chaussende, F Mercier, A Boulle, F Conchon, M Soueidan, G Ferro, ... Journal of Crystal Growth 310 (5), 976-981, 2008 | 56 | 2008 |
| Status of SiC bulk growth processes D Chaussende, PJ Wellmann, M Pons Journal of Physics D: Applied Physics 40 (20), 6150, 2007 | 55 | 2007 |
| Raman scattering from Ti3SiC2 single crystals F Mercier, O Chaix-Pluchery, T Ouisse, D Chaussende Applied Physics Letters 98 (8), 2011 | 53 | 2011 |
| Birefringence microscopy of unit dislocations in diamond LTM Hoa, T Ouisse, D Chaussende, M Naamoun, A Tallaire, J Achard Crystal growth & design 14 (11), 5761-5766, 2014 | 49 | 2014 |
| Continuous feed physical vapor transport: toward high purity and long boule growth of SiC D Chaussende, F Baillet, L Charpentier, E Pernot, M Pons, R Madar Journal of The Electrochemical Society 150 (10), G653, 2003 | 49 | 2003 |
| Synthesis of single crystals of V2AlC phase by high-temperature solution growth and slow cooling technique L Shi, T Ouisse, E Sarigiannidou, O Chaix-Pluchery, H Roussel, ... Acta Materialia 83, 304-309, 2015 | 45 | 2015 |
| Thermodynamic and experimental investigations on the growth of thick aluminum nitride layers by high temperature CVD A Claudel, E Blanquet, D Chaussende, M Audier, D Pique, M Pons Journal of Crystal Growth 311 (13), 3371-3379, 2009 | 44 | 2009 |
| Characterization of a 3C-SiC Single Domain Grown on 6H-SiC (0001) by a Vapor− Liquid− Solid Mechanism M Soueidan, G Ferro, B Nsouli, M Roumie, E Polychroniadis, M Kazan, ... Crystal growth & design 6 (11), 2598-2602, 2006 | 42 | 2006 |
| Magnetotransport properties of nearly-free electrons in two-dimensional hexagonal metals and application to the phases T Ouisse, L Shi, BA Piot, B Hackens, V Mauchamp, D Chaussende Physical Review B 92 (4), 045133, 2015 | 40 | 2015 |
| X-ray diffuse scattering from stacking faults in thick 3C-SiC single crystals A Boulle, D Chaussende, L Latu-Romain, F Conchon, O Masson, ... Applied Physics Letters 89 (9), 2006 | 37 | 2006 |
| Modeling of the growth rate during top seeded solution growth of SiC using pure silicon as a solvent J Lefebure, JM Dedulle, T Ouisse, D Chaussende Crystal growth & design 12 (2), 909-913, 2012 | 35 | 2012 |
| Large Area DPB free (111) β-SiC thick layer grown on (0001) α-SiC nominal surfaces by the CF-PVT method D Chaussende, L Latu-Romain, L Auvray, M Ucar, M Pons, R Madar Materials Science Forum 483, 225-228, 2005 | 35 | 2005 |
