| Room-temperature creation and spin–orbit torque manipulation of skyrmions in thin films with engineered asymmetry G Yu, P Upadhyaya, X Li, W Li, SK Kim, Y Fan, KL Wong, Y Tserkovnyak, ... Nano letters 16 (3), 1981-1988, 2016 | 345 | 2016 |
| Room-temperature skyrmion shift device for memory application G Yu, P Upadhyaya, Q Shao, H Wu, G Yin, X Li, C He, W Jiang, X Han, ... Nano letters 17 (1), 261-268, 2017 | 302 | 2017 |
| Electric-field-controlled magnetoelectric RAM: Progress, challenges, and scaling PK Amiri, JG Alzate, XQ Cai, F Ebrahimi, Q Hu, K Wong, C Grèzes, H Lee, ... IEEE Transactions on Magnetics 51 (11), 1-7, 2015 | 182 | 2015 |
| Interfacial Dzyaloshinskii-Moriya Interaction: Effect of Band Filling and Correlation with Spin Mixing Conductance X Ma, G Yu, C Tang, X Li, C He, J Shi, KL Wang, X Li Physical review letters 120 (15), 157204, 2018 | 148 | 2018 |
| Enhancement of voltage-controlled magnetic anisotropy through precise control of Mg insertion thickness at CoFeB| MgO interface X Li, K Fitzell, D Wu, CT Karaba, A Buditama, G Yu, KL Wong, N Altieri, ... Applied Physics Letters 110 (5), 2017 | 128 | 2017 |
| Magneto-optical investigation of spin–orbit torques in metallic and insulating magnetic heterostructures M Montazeri, P Upadhyaya, MC Onbasli, G Yu, KL Wong, M Lang, Y Fan, ... Nature communications 6 (1), 8958, 2015 | 121 | 2015 |
| Strain-induced modulation of perpendicular magnetic anisotropy in Ta/CoFeB/MgO structures investigated by ferromagnetic resonance G Yu, Z Wang, M Abolfath-Beygi, C He, X Li, KL Wong, P Nordeen, H Wu, ... Applied Physics Letters 106 (7), 2015 | 114 | 2015 |
| Current-driven perpendicular magnetization switching in Ta/CoFeB/[TaOx or MgO/TaOx] films with lateral structural asymmetry G Yu, LT Chang, M Akyol, P Upadhyaya, C He, X Li, KL Wong, PK Amiri, ... Applied Physics Letters 105 (10), 2014 | 107 | 2014 |
| Dzyaloshinskii-Moriya interaction across an antiferromagnet-ferromagnet interface X Ma, G Yu, SA Razavi, SS Sasaki, X Li, K Hao, SH Tolbert, KL Wang, X Li Physical review letters 119 (2), 027202, 2017 | 97 | 2017 |
| Interfacial control of Dzyaloshinskii-Moriya interaction in heavy metal/ferromagnetic metal thin film heterostructures X Ma, G Yu, X Li, T Wang, D Wu, KS Olsson, Z Chu, K An, JQ Xiao, ... Physical Review B 94 (18), 180408, 2016 | 96 | 2016 |
| Current-induced spin-orbit torque switching of perpendicularly magnetized Hf| CoFeB| MgO and Hf| CoFeB| TaOx structures M Akyol, G Yu, JG Alzate, P Upadhyaya, X Li, KL Wong, A Ekicibil, ... Applied Physics Letters 106 (16), 2015 | 78 | 2015 |
| Spin-orbit torques in perpendicularly magnetized Ir22Mn78/Co20Fe60B20/MgO multilayer D Wu, G Yu, CT Chen, SA Razavi, Q Shao, X Li, B Zhao, KL Wong, C He, ... Applied Physics Letters 109 (22), 2016 | 74 | 2016 |
| Thermally stable voltage-controlled perpendicular magnetic anisotropy in Mo| CoFeB| MgO structures X Li, G Yu, H Wu, PV Ong, K Wong, Q Hu, F Ebrahimi, P Upadhyaya, ... Applied Physics Letters 107 (14), 2015 | 70 | 2015 |
| Spin-orbit torque from a ferromagnetic metal H Wu, SA Razavi, Q Shao, X Li, KL Wong, Y Liu, G Yin, KL Wang Physical Review B 99 (18), 184403, 2019 | 61 | 2019 |
| Voltage-controlled magnetoelectric memory and logic devices X Li, A Lee, SA Razavi, H Wu, KL Wang MRS Bulletin 43 (12), 970-977, 2018 | 61 | 2018 |
| Write error rate and read disturbance in electric-field-controlled magnetic random-access memory C Grezes, H Lee, A Lee, S Wang, F Ebrahimi, X Li, K Wong, JA Katine, ... IEEE Magnetics Letters 8, 1-5, 2016 | 59 | 2016 |
| Field-free switching of perpendicular magnetization through voltage-gated spin-orbit torque SZ Peng, JQ Lu, WX Li, LZ Wang, H Zhang, X Li, KL Wang, WS Zhao 2019 IEEE International Electron Devices Meeting (IEDM), 28.6. 1-28.6. 4, 2019 | 53 | 2019 |
| Spin-torque ferromagnetic resonance measurements utilizing spin Hall magnetoresistance in W/Co40Fe40B20/MgO structures C He, A Navabi, Q Shao, G Yu, D Wu, W Zhu, C Zheng, X Li, QL He, ... Applied Physics Letters 109 (20), 2016 | 51 | 2016 |
| Enhanced voltage-controlled magnetic anisotropy in magnetic tunnel junctions with an MgO/PZT/MgO tunnel barrier D Chien, X Li, K Wong, MA Zurbuchen, S Robbennolt, G Yu, S Tolbert, ... Applied Physics Letters 108 (11), 2016 | 48 | 2016 |
| Voltage-controlled magnetic tunnel junctions for processing-in-memory implementation L Wang, W Kang, F Ebrahimi, X Li, Y Huang, C Zhao, KL Wang, W Zhao IEEE Electron Device Letters 39 (3), 440-443, 2018 | 40 | 2018 |
Kang L. WangElectrical Engineering Department在 ee.ucla.edu 的电子邮件经过验证
