| Two-dimensional charge carrier distribution in MoS2 monolayer and multilayers R Dagan, Y Vaknin, A Henning, JY Shang, LJ Lauhon, Y Rosenwaks Applied Physics Letters 114 (10), 2019 | 47 | 2019 |
| Schottky Barrier Height and Image Force Lowering in Monolayer MoS2 Field Effect Transistors Y Vaknin, R Dagan, Y Rosenwaks Nanomaterials 10 (12), 2346, 2020 | 29 | 2020 |
| Electrostatic selectivity of volatile organic compounds using electrostatically formed nanowire sensor N Mahapatra, A Ben-Cohen, Y Vaknin, A Henning, J Hayon, ... ACS sensors 3 (3), 709-715, 2018 | 28 | 2018 |
| Electrostatic Limit of Detection of Nanowire‐Based Sensors A Henning, M Molotskii, N Swaminathan, Y Vaknin, A Godkin, G Shalev, ... Small 11 (37), 4931-4937, 2015 | 26 | 2015 |
| Gap state distribution and Fermi level pinning in monolayer to multilayer MoS 2 field effect transistors R Dagan, Y Vaknin, Y Rosenwaks Nanoscale 12 (16), 8883-8889, 2020 | 25 | 2020 |
| Threshold logic with electrostatically formed nanowires JS Friedman, A Godkin, A Henning, Y Vaknin, Y Rosenwaks, ... IEEE Transactions on Electron Devices 63 (3), 1388-1391, 2016 | 21 | 2016 |
| Control of the intrinsic sensor response to volatile organic compounds with fringing electric fields A Henning, N Swaminathan, Y Vaknin, T Jurca, K Shimanovich, G Shalev, ... Acs Sensors 3 (1), 128-134, 2018 | 17 | 2018 |
| Dynamic range enhancement using the electrostatically formed nanowire sensor N Swaminathan, A Henning, Y Vaknin, K Shimanovich, A Godkin, ... ACS Sensors 1 (6), 688-695, 2016 | 16 | 2016 |
| Pinch-Off Formation in Monolayer and Multilayers MoS2 Field-Effect Transistors Y Vaknin, R Dagan, Y Rosenwaks Nanomaterials 9 (6), 882, 2019 | 11 | 2019 |
| CMOS compatible electrostatically formed nanowire transistor for efficient sensing of temperature K Shimanovich, T Coen, Y Vaknin, A Henning, J Hayon, Y Roizin, ... IEEE Transactions on Electron Devices 64 (9), 3836-3840, 2017 | 9 | 2017 |
| Accurate method to determine the mobility of transition-metal dichalcogenides with incomplete gate screening R Dagan, Y Vaknin, D Weisman, I Amit, Y Rosenwaks ACS applied materials & interfaces 11 (47), 44406-44412, 2019 | 6 | 2019 |
| A paradigm for integrated circuits based on the MSET transistor A Peled, O Amrani, Y Rosenwaks, Y Vaknin IEEE Transactions on Electron Devices 65 (3), 1192-1197, 2018 | 6 | 2018 |
| Apparatus, system and method of an electrostatically formed nanowire (EFN) Z Shaked, Y Roizin, M Vofsy, A Heiman, Y Rosenwaks, K Shimanovich, ... US Patent 11,374,120, 2022 | | 2022 |
| Apparatus, system and method of a temperature sensor Y Roizin, M Vofsy, A Heiman, Y Rosenwaks, K Shimanovich, Y Vaknin US Patent 10,788,375, 2020 | | 2020 |
| Apparatus, system and method of an electrostatically formed nanowire (EFN) Z Shaked, Y Roizin, M Vofsy, A Heiman, Y Rosenwaks, K Shimanovich, ... US Patent 10,770,573, 2020 | | 2020 |
