| Applications of functionally graded materials in optoelectronic devices. M WOŚKO, B Paszkiewicz, T PIASECKI, A Szyszka, R PASZKIEWICZ, ... Optica Applicata 35 (3), 2005 | 52 | 2005 |
| A novel electrospun ZnO nanofibers biosensor fabrication A Stafiniak, B Boratyński, A Baranowska-Korczyc, A Szyszka, ... Sensors and Actuators B: Chemical 160 (1), 1413-1418, 2011 | 49 | 2011 |
| Functionally graded semiconductor layers for devices application B Paszkiewicz, R Paszkiewicz, M Wosko, D Radziewicz, B Ściana, ... Vacuum 82 (4), 389-394, 2007 | 29 | 2007 |
| Enhanced ultraviolet GaN photo-detector response on Si(111) via engineered oxide buffers with embedded Y2O3/Si distributed Bragg reflectors A Szyszka, L Lupina, G Lupina, M Mazur, MA Schubert, P Storck, ... Applied Physics Letters 104 (1), 011106, 2014 | 24 | 2014 |
| Enzymatic Platforms for Sensitive Neurotransmitter Detection S Baluta, D Zając, A Szyszka, K Malecha, J Cabaj Sensors 20 (2), 423, 2020 | 23 | 2020 |
| Properties of AlNx thin films prepared by DC reactive magnetron sputtering. A Stafiniak, D Muszyńska, A Szyszka, B Paszkiewicz, K Ptasiński, ... Optica Applicata 39 (4), 2009 | 18 | 2009 |
| Application and modeling of functionally graded materials for optoelectronic devices M Wosko, B Paszkiewicz, T Piasecki, A Szyszka, R Paszkiewicz, ... Proceedings of 2005 International Students and Young Scientists Workshop …, 2005 | 16 | 2005 |
| Effect of annealing temperature on the morphology of ohmic contact Ti/Al/Ni/Au to n-AlGaN/GaN heterostructures W Macherzynski, A Stafiniak, A Szyszka, J Gryglewicz, B Paszkiewicz, ... Optica Applicata 39 (4), 673, 2009 | 12 | 2009 |
| Surface topography analysis with application of roughness area dependence method A Szyszka, M Wośko, T Szymański, R Paszkiewicz Ultramicroscopy 170, 77-85, 2016 | 11 | 2016 |
| Properties of MOVPE GaN grown on ZnO deposited on Si (0 0 1) and Si (1 1 1) substrates R Paszkiewicz, B Paszkiewicz, M Wosko, A Szyszka, L Marciniak, ... Journal of Crystal Growth 310 (23), 4891-4895, 2008 | 11 | 2008 |
| Defect passivation of multicrystalline silicon solar cells by silicon nitride coatings M Lipiński, P Panek, S Kluska, P Zięba, A Szyszka, B Paszkiewicz Materials Science-Poland 24 (4), 62-66, 2006 | 11 | 2006 |
| Wet thermal oxidation for GaAs, GaN and Metal/GaN device applications R Korbutowicz, J Prazmowska, Z Wagrowski, A Szyszka, M Tlaczala 2008 International Conference on Advanced Semiconductor Devices and …, 2008 | 10 | 2008 |
| Optimization of GaN nucleation layer deposition conditions on sapphire substrates in HVPE system J Prażmowska, R Korbutowicz, R Paszkiewicz, A Szyszka, J Serafińczuk, ... Vacuum 82 (10), 988-993, 2008 | 10 | 2008 |
| Surface electrical characterization of defect related inhomogeneities of AlGaN/GaN/Si heterostructures using scanning capacitance microscopy A Szyszka, M Wośko, B Paszkiewicz, R Paszkiewicz Materials Science in Semiconductor Processing 94, 57-63, 2019 | 8 | 2019 |
| A cross‐sectional scanning capacitance microscopy characterization of GaAs based solar cell structures A Szyszka, W Dawidowski, A Stafiniak, J Prażmowska, B Ściana, ... Crystal Research and Technology 52 (6), 1700019, 2017 | 8 | 2017 |
| Scanning capacitance microscopy characterization of AIIIBV epitaxial layers A Szyszka, M Obłąk, T Szymański, M Wośko, W Dawidowski, ... Materials Science-Poland 34 (4), 845-850, 2016 | 6 | 2016 |
| Application of nanoscratching in electronic devices M Ramiączek-Krasowska, A Szyszka, J Prazmowska, R Paszkiewicz, ... Optica Applicata 39 (4), 711-716, 2009 | 6 | 2009 |
| Impact of gallium concentration in the gas phase on composition of InGaAsN alloys grown by AP-MOVPE correlated with their structural and optical properties B Ściana, D Radziewicz, W Dawidowski, K Bielak, A Szyszka, J Kopaczek Journal of Materials Science: Materials in Electronics 30 (17), 16216-16225, 2019 | 5 | 2019 |
| Ultraviolet GaN photodetectors on Si via oxide buffer heterostructures with integrated short period oxide-based distributed Bragg reflectors and leakage suppressing metal-oxide … A Szyszka, L Lupina, G Lupina, MA Schubert, P Zaumseil, M Haeberlen, ... Journal of Applied Physics 116 (8), 083108, 2014 | 5 | 2014 |
| Influence of the deposition parameters of nucleation layer on the properties of thick gallium nitride layers J Prażmowska, R Korbutowicz, R Paszkiewicz, A Szyszka, ... Materials Science-Poland 26 (1), 2008 | 5 | 2008 |
