| Nanometre-thin indium tin oxide for advanced high-performance electronics S Li, M Tian, Q Gao, M Wang, T Li, Q Hu, X Li, Y Wu Nature materials 18 (10), 1091-1097, 2019 | 292 | 2019 |
| Reconfigurable logic‐in‐memory and multilingual artificial synapses based on 2D heterostructures X Xiong, J Kang, Q Hu, C Gu, T Gao, X Li, Y Wu Advanced Functional Materials 30 (11), 1909645, 2020 | 116 | 2020 |
| Scaling aligned carbon nanotube transistors to a sub-10 nm node Y Lin, Y Cao, S Ding, P Zhang, L Xu, C Liu, Q Hu, C Jin, LM Peng, ... Nature Electronics 6 (7), 506-515, 2023 | 59 | 2023 |
| Channel Engineering of Normally-OFF AlGaN/GaN MOS-HEMTs by Atomic Layer Etching and High- Dielectric Q Hu, S Li, T Li, X Wang, X Li, Y Wu IEEE Electron Device Letters 39 (9), 1377-1380, 2018 | 47 | 2018 |
| Enhancement‐mode field‐effect transistors and high‐speed integrated circuits based on aligned carbon nanotube films Y Lin, S Liang, L Xu, L Liu, Q Hu, C Fan, Y Liu, J Han, Z Zhang, LM Peng Advanced Functional Materials 32 (11), 2104539, 2022 | 45 | 2022 |
| High-performance transistors based on monolayer CVD MoS2 grown on molten glass Z Zhang, X Xu, J Song, Q Gao, S Li, Q Hu, X Li, Y Wu Applied Physics Letters 113 (20), 2018 | 44 | 2018 |
| High-performance flexible ZnO thin-film transistors by atomic layer deposition M Wang, X Li, X Xiong, J Song, C Gu, D Zhan, Q Hu, S Li, Y Wu IEEE Electron Device Letters 40 (3), 419-422, 2019 | 39 | 2019 |
| Improved Interface Properties and Dielectric Breakdown in Recessed AlGaN/GaN MOS-HEMTs Using HfSiO as Gate Dielectric S Li, Q Hu, X Wang, T Li, X Li, Y Wu IEEE Electron Device Letters 40 (2), 295-298, 2018 | 28 | 2018 |
| Improved current collapse in recessed AlGaN/GaN MOS-HEMTs by interface and structure engineering Q Hu, B Hu, C Gu, T Li, S Li, S Li, X Li, Y Wu IEEE Transactions on Electron Devices 66 (11), 4591-4596, 2019 | 25 | 2019 |
| Negative transconductance and negative differential resistance in asymmetric narrow bandgap 2D–3D heterostructures T Li, X Li, M Tian, Q Hu, X Wang, S Li, Y Wu Nanoscale 11 (11), 4701-4706, 2019 | 21 | 2019 |
| High-performance CVD bernal-stacked bilayer graphene transistors for amplifying and mixing signals at High frequencies M Tian, X Li, T Li, Q Gao, X Xiong, Q Hu, M Wang, X Wang, Y Wu ACS applied materials & interfaces 10 (24), 20219-20224, 2018 | 21 | 2018 |
| Capacitorless DRAM cells based on high-performance indium-tin-oxide transistors with record data retention and reduced write latency Q Hu, C Gu, S Zhu, Q Li, A Tong, J Kang, R Huang, Y Wu IEEE Electron Device Letters 44 (1), 60-63, 2022 | 19 | 2022 |
| Performance optimization of atomic layer deposited ZnO thin-film transistors by vacuum annealing M Wang, D Zhan, X Wang, Q Hu, C Gu, X Li, Y Wu IEEE Electron Device Letters 42 (5), 716-719, 2021 | 19 | 2021 |
| True Nonvolatile High‐Speed DRAM Cells Using Tailored Ultrathin IGZO Q Hu, C Gu, Q Li, S Zhu, S Liu, Y Li, L Zhang, R Huang, Y Wu Advanced Materials 35 (20), 2210554, 2023 | 16 | 2023 |
| Black phosphorus radio frequency electronics at cryogenic temperatures T Li, M Tian, S Li, M Huang, X Xiong, Q Hu, S Li, X Li, Y Wu Advanced Electronic Materials 4 (8), 1800138, 2018 | 16 | 2018 |
| Optimized IGZO FETs for Capacitorless DRAM with Retention of 10 ks at RT and 7 ks at 85 °C at Zero Vhold with Sub-10 ns Speed and 3-bit Operation Q Hu, Q Li, S Zhu, C Gu, S Liu, R Huang, Y Wu 2022 International Electron Devices Meeting (IEDM), 26.6. 1-26.6. 4, 2022 | 15 | 2022 |
| Ultrashort 15-nm flexible radio frequency ITO transistors enduring mechanical and temperature stress Q Hu, S Zhu, C Gu, S Liu, M Zeng, Y Wu Science Advances 8 (51), eade4075, 2022 | 13 | 2022 |
| BEOL-Compatible High-Performance a-IGZO Transistors with Record high Ids,max = 1207 μA/μm and on-off ratio exceeding 1011 at Vds = 1V Q Li, C Gu, S Zhu, Q Hu, W Zhao, X Li, R Huang, Y Wu 2022 International Electron Devices Meeting (IEDM), 2.7. 1-2.7. 4, 2022 | 10 | 2022 |
| High-performance short-channel top-gate indium-tin-oxide transistors by optimized gate dielectric C Gu, Q Hu, S Zhu, Q Li, M Zeng, H Liu, J Kang, S Liu, Y Wu IEEE Electron Device Letters 44 (5), 837-840, 2023 | 9 | 2023 |
| Flexible synaptic floating gate devices with dual electrical modulation based on ambipolar black phosphorus X Xiong, X Wang, Q Hu, X Li, Y Wu Iscience 25 (3), 2022 | 8 | 2022 |
