| Stranski-Krastanov growth mode during the molecular beam epitaxy of highly strained GaN B Daudin, F Widmann, G Feuillet, Y Samson, M Arlery, JL Rouvière Physical Review B 56 (12), R7069, 1997 | 466 | 1997 |
| Blue-light emission from GaN self-assembled quantum dots due to giant piezoelectric effect F Widmann, J Simon, B Daudin, G Feuillet, JL Rouviere, NT Pelekanos, ... Physical Review B 58 (24), R15989, 1998 | 350 | 1998 |
| Growth kinetics and optical properties of self-organized GaN quantum dots F Widmann, B Daudin, G Feuillet, Y Samson, JL Rouvière, N Pelekanos Journal of Applied Physics 83 (12), 7618-7624, 1998 | 294 | 1998 |
| Polarity determination of GaN films by ion channeling and convergent beam electron diffraction B Daudin, JL Rouviere, M Arlery Applied physics letters 69 (17), 2480-2482, 1996 | 260 | 1996 |
| Polarity determination for GaN films grown on (0001) sapphire and high-pressure-grown GaN single crystals JL Rouviere, JL Weyher, M Seelmann-Eggebert, S Porowski Applied physics letters 73 (5), 668-670, 1998 | 217 | 1998 |
| Confirmation of the Domino-Cascade Model by LiFePO4/FePO4 Precession Electron Diffraction G Brunetti, D Robert, P Bayle-Guillemaud, JL Rouviere, EF Rauch, ... Chemistry of Materials 23 (20), 4515-4524, 2011 | 214 | 2011 |
| Theoretical discussions on the geometrical phase analysis JL Rouviere, E Sarigiannidou Ultramicroscopy 106 (1), 1-17, 2005 | 209 | 2005 |
| Crystal structure and band gap determination of HfO2 thin films MC Cheynet, S Pokrant, FD Tichelaar, JL Rouvière Journal of Applied Physics 101 (5), 2007 | 190 | 2007 |
| Strain measurements by convergent-beam electron diffraction: The importance of stress relaxation in lamella preparations L Clément, R Pantel, LF Kwakman, JL Rouvière Applied physics letters 85 (4), 651-653, 2004 | 190 | 2004 |
| Improved quality GaN grown by molecular beam epitaxy using In as a surfactant F Widmann, B Daudin, G Feuillet, N Pelekanos, JL Rouvière Applied physics letters 73 (18), 2642-2644, 1998 | 186 | 1998 |
| Improved precision in strain measurement using nanobeam electron diffraction A Béché, JL Rouvière, L Clément, JM Hartmann Applied Physics Letters 95 (12), 2009 | 180 | 2009 |
| Strain measurement at the nanoscale: Comparison between convergent beam electron diffraction, nano-beam electron diffraction, high resolution imaging and dark field electron … A Béché, JL Rouvière, JP Barnes, D Cooper Ultramicroscopy 131, 10-23, 2013 | 159 | 2013 |
| Recent advances in defect-selective etching of GaN JL Weyher, PD Brown, JL Rouviere, T Wosinski, ARA Zauner, I Grzegory Journal of Crystal Growth 210 (1-3), 151-156, 2000 | 159 | 2000 |
| Growth of aluminum nitride on (111) silicon: microstructure and interface structure A Bourret, A Barski, JL Rouviere, G Renaud, A Barbier Journal of applied physics 83 (4), 2003-2009, 1998 | 152 | 1998 |
| Improved strain precision with high spatial resolution using nanobeam precession electron diffraction JL Rouviere, A Béché, Y Martin, T Denneulin, D Cooper Applied Physics Letters 103 (24), 2013 | 142 | 2013 |
| Control of gold surface diffusion on Si nanowires MI den Hertog, JL Rouviere, F Dhalluin, PJ Desré, P Gentile, P Ferret, ... Nano letters 8 (5), 1544-1550, 2008 | 137 | 2008 |
| Strain relaxation in (0001) AlN/GaN heterostructures A Bourret, C Adelmann, B Daudin, JL Rouvière, G Feuillet, G Mula Physical Review B 63 (24), 245307, 2001 | 137 | 2001 |
| Strain mapping of semiconductor specimens with nm-scale resolution in a transmission electron microscope D Cooper, T Denneulin, N Bernier, A Béché, JL Rouvière Micron 80, 145-165, 2016 | 134 | 2016 |
| Quantitative characterization of GaN quantum-dot structures in AlN by high-resolution transmission electron microscopy M Arlery, JL Rouviere, F Widmann, B Daudin, G Feuillet, H Mariette Applied Physics Letters 74 (22), 3287-3289, 1999 | 130 | 1999 |
| Odd electron diffraction patterns in silicon nanowires and silicon thin films explained by microtwins and nanotwins C Cayron, M Den Hertog, L Latu-Romain, C Mouchet, C Secouard, ... Journal of applied crystallography 42 (2), 242-252, 2009 | 114 | 2009 |
David CooperCEA LETI Minatec Campus在 cea.fr 的电子邮件经过验证
