Development of a method to evaluate the stress distribution in 4H-SiC power devices H Sakakima, S Takamoto, Y Murakami, A Hatano, A Goryu, K Hirohata, ... Japanese Journal of Applied Physics 57 (10), 106602, 2018 | 23 | 2018 |
Temperature-dependent stacking fault energies of 4H-SiC: A first-principles study H Sakakima, S Takamoto, A Hatano, S Izumi Journal of Applied Physics 127 (12), 125703, 2020 | 18 | 2020 |
Modeling the effect of mechanical stress on bipolar degradation in 4H-SiC power devices H Sakakima, A Goryu, A Kano, A Hatano, K Hirohata, S Izumi Journal of Applied Physics 128 (2), 025701, 2020 | 16 | 2020 |
Reaction pathway analysis for the conversion of perfect screw basal plane dislocation to threading edge dislocation in 4H-SiC Y Tamura, H Sakakima, S Takamoto, A Hatano, S Izumi Japanese Journal of Applied Physics 58 (8), 081005, 2019 | 12 | 2019 |
Comparative study of the effect of van der Waals interactions on stacking fault energies in SiC H Sakakima, A Hatano, S Izumi Journal of Applied Physics 130 (21), 215701, 2021 | 5 | 2021 |
NO Annealing Simulation of 4H-SiC/SiO2 by Charge-Transfer Type Molecular Dynamics Y Ohuchi, H Saeki, H Sakakima, S Izumi Materials Science Forum 1090, 135-139, 2023 | 4 | 2023 |
Isolation and reconstruction of cardiac mitochondria from SBEM images using a deep learning-based method A Hatano, M Someya, H Tanaka, H Sakakima, S Izumi, M Hoshijima, ... Journal of Structural Biology 214 (1), 107806, 2022 | 4 | 2022 |
Reaction pathway analysis for the contraction of 4H-SiC partial-dislocations pair in the vicinity of surface A Hirano, H Sakakima, A Hatano, S Izumi Japanese Journal of Applied Physics 60 (8), 085502, 2021 | 4 | 2021 |
Exploration of the mechanical properties of carbon-incorporated amorphous silica using a universal neural network potential H Sakakima, K Ogawa, S Miyazaki, S Izumi Journal of Applied Physics 135 (8), 085104, 2024 | 3 | 2024 |
Development of charge-transfer interatomic potential for O-Fe-P-Zn systems and its application to tribochemical reactions between ZnDTP-derived tribofilm and iron oxide H Sakakima, T Okazawa, K Kume, S Kobayashi, K Kawaguchi, ... Computational Materials Science 231, 112550, 2024 | 2 | 2024 |
Charge-transfer interatomic potential to reproduce 30° partial dislocation movements for 4H-SiC in the surface vicinity and its application to BPD-TED conversion A Hirano, H Sakakima, A Hatano, S Izumi Computational Materials Science 231, 112588, 2024 | 2 | 2024 |
Effects of terraces and steps on the 4H-SiC BPD-TED conversion rate: A reaction pathway analysis A Hirano, H Sakakima, A Hatano, S Izumi Journal of Applied Physics 135 (9), 095701, 2024 | 1 | 2024 |
Molecular dynamics study of the effect of composition on elastic properties of silicon oxynitride films S Miyazaki, H Sakakima, K Ogawa, S Izumi Japanese Journal of Applied Physics 63 (11), 115502, 2024 | | 2024 |
Molecular Dynamics Simulation Approach to H2 Etching Process on SiC H Saeki, Y Ohuchi, H Sakakima, S Izumi Scientific Books of Abstracts 8, 472-473, 2024 | | 2024 |
Clustering Tendencies of C Atoms in SiO2 Matrix with Different O-Containing Conditions: Molecular Dynamics Study with a Universal Neural Network Potential H Sakakima, K Ogawa, S Miyazaki, S Izumi Scientific Books of Abstracts 8, 636-637, 2024 | | 2024 |
主成分分析と多層パーセプトロンを用いた鉄道車両構体の有限要素解析の機械学習代替モデル 福元康平, 榊間大輝, 古谷了, 川崎健, 泉聡志 日本機械学会論文集 90 (937), 24-00133, 2024 | | 2024 |
Near-Interface Defect Decomposition during NO Annealing Analyzed by Molecular Dynamics Simulations Y Ohuchi, H Saeki, H Sakakima, S Izumi Defect and Diffusion Forum 434, 93-98, 2024 | | 2024 |
Surface Oxidation of GaN (0001) Simulated by Charge‐Transfer‐Type Molecular Dynamics Y Ohuchi, H Saeki, H Sakakima, S Izumi physica status solidi (b), 2400030, 2024 | | 2024 |
Long-range Tersoff potential for silicon to reproduce 30° partial dislocation migration A Hirano, H Sakakima, A Hatano, S Izumi Computational Materials Science 231, 112557, 2024 | | 2024 |
小型カメラを用いた変位測定と有限要素解析による鉄道分岐器のトングレール継ぎ目における衝撃振動増幅現象の解明 三浦友裕, 寺門暉斗, 榊間大輝, 戸丸耕太, 佐々木和洋, 金田敏之, ... 日本機械学会論文集 90 (936), 24-00111, 2024 | | 2024 |