| A review on mechanics and mechanical properties of 2D materials—Graphene and beyond D Akinwande, CJ Brennan, JS Bunch, P Egberts, JR Felts, H Gao, ... Extreme Mechanics Letters 13, 42-77, 2017 | 1258 | 2017 |
| Flexible black phosphorus ambipolar transistors, circuits and AM demodulator W Zhu, MN Yogeesh, S Yang, SH Aldave, JS Kim, S Sonde, L Tao, N Lu, ... Nano letters 15 (3), 1883-1890, 2015 | 487 | 2015 |
| Toward air-stable multilayer phosphorene thin-films and transistors JS Kim, Y Liu, W Zhu, S Kim, D Wu, L Tao, A Dodabalapur, K Lai, ... Scientific reports 5, 2015 | 468 | 2015 |
| Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors YY Illarionov, M Waltl, G Rzepa, JS Kim, S Kim, A Dodabalapur, ... ACS Nano, 2016 | 188 | 2016 |
| Origin of superconductivity in the Weyl semimetal WT e 2 under pressure P Lu, JS Kim, J Yang, H Gao, J Wu, D Shao, B Li, D Zhou, J Sun, ... Physical Review B 94 (22), 224512, 2016 | 119 | 2016 |
| Large-Area Dry Transfer of Single-Crystalline Epitaxial Bismuth Thin Films E Walker, SR Na, J Daehwan, S March, JS Kim, T Trivedi, W Li, L Tao, ... Nano Letters, 2016 | 104 | 2016 |
| Thermal Oxidation of WSe2 Nanosheets Adhered on SiO2/Si Substrates KL Yingnan Liu, Cheng Tan, Harry Chou, Avinash Nayak, Di Wu, Rudresh Ghosh ... Nano Letters 15 (8), 4979-4984, 2015 | 99 | 2015 |
| Highly-stable black phosphorus field-effect transistors with low density of oxide traps DATG Yu. Yu. Illarionov, M. Waltl, G. Rzepa, T. Knobloch, J.-S. Kim npj 2D Materials and Applications 1 (23), 2017 | 64 | 2017 |
| Experimental evidence of exciton capture by mid-gap defects in CVD grown monolayer MoSe2 SKBYW Ke Chen, Rudresh Ghosh, Xianghai Meng, Anupam Roy, Joon-Seok Kim, Feng ... npj 2D Materials and Applications 1 (15), 2017 | 63 | 2017 |
| Characterization and sonochemical synthesis of black phosphorus from red phosphorus APNDA Sandra H Aldave, Maruthi N Yogeesh, Weinan Zhu, Joonseok Kim, Sushant ... 2D Materials 3 (1), 2016 | 63 | 2016 |
| Pressure-Induced Charge Transfer Doping of Monolayer Graphene/MoS2 Heterostructure T Pandey, AP Nayak, J Liu, ST Moran, J Kim, LJ Li, JF Lin, D Akinwande, ... Small, 2016 | 57* | 2016 |
| Laser-assisted oxidation of multi-layer tungsten diselenide nanosheets DAKL C. Tan, Y. Liu, H. Chou, J.-S. Kim, D. Wu Applied Physics Letters 108, 2016 | 37 | 2016 |
| Towards Band Structure and Band Offset Engineering of Monolayer Mo(1-x)W(x)S2 via Strain DAJFL Joon-Seok Kim, Rafia Ahmad, Tribhuwan Pandey, Amritesh Rai, Simin Feng ... 2D Materials 5 (1), 2017 | 32 | 2017 |
| High pressure Raman study of layered Mo0.5W0.5S2 ternary compound JS Kim, S T Moran, A P Nayak, S Pedahzur, I Ruiz, G Ponce, D Rodriguez, ... 2D Materials 3 (2), 2016 | 29 | 2016 |
| Large area chemical vapor deposition growth of monolayer MoSe2 and its controlled sulfurization to MoS2 DA Rudresh Ghosh, Joon-Seok Kim, Anupam Roy, Harry Chou, Mary Vu, Sanjay K ... Journal of Materials Research, 2016 | 24 | 2016 |
| Structural, vibrational, and electronic topological transitions of Bi1.5Sb0.5Te1.8Se1.2 under pressure JS Kim, R Juneja, NP Salke, W Palosz, V Swaminathan, S Trivedi, ... Journal of Applied Physics 123, 115903, 2018 | 20 | 2018 |
| High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction X Zhuang, JS Kim, W Huang, Y Chen, G Wang, J Chen, Y Yao, Z Wang, ... Proceedings of the National Academy of Sciences of the United States of …, 2023 | 14 | 2023 |
| Readily Accessible Metallic Micro Island Arrays for High-Performance Metal Oxide Thin-Film Transistors J Kim, JB Park, D Zheng, JS Kim, Y Cheng, SK Park, W Huang, TJ Marks, ... Advanced Materials, 2022 | 11 | 2022 |
| Edge and Interface Resistances Create Distinct Trade-Offs When Optimizing the Microstructure of Printed van der Waals Thin-Film Transistors Z Zhu, JS Kim, MJ Moody, LJ Lauhon ACS Nano, 2022 | 7 | 2022 |
| Strain-Modulated Interlayer Charge and Energy Transfers in MoS2/WS2 Heterobilayer JS Kim, N Maity, M Kim, S Fu, R Juneja, AK Singh, D Akinwande, JF Lin ACS Applied Materials & Interfaces 14 (41), 46841–46849, 2022 | 7 | 2022 |
Deji AkinwandeThe University of Texas at Austin, IEEE, MRS, APS, AAS Fellow在 ece.utexas.edu 的电子邮件经过验证
