Vertically aligned GaAs nanowires on graphite and few-layer graphene: generic model and epitaxial growth AM Munshi, DL Dheeraj, VT Fauske, DC Kim, ATJ van Helvoort, ... Nano letters 12 (9), 4570-4576, 2012 | 241 | 2012 |
Position-controlled uniform GaAs nanowires on silicon using nanoimprint lithography AM Munshi, DL Dheeraj, VT Fauske, DC Kim, J Huh, JF Reinertsen, ... Nano letters 14 (2), 960-966, 2014 | 175 | 2014 |
Observation of free exciton photoluminescence emission from single wurtzite GaAs nanowires TB Hoang, AF Moses, HL Zhou, DL Dheeraj, BO Fimland, H Weman Applied physics letters 94 (13), 2009 | 162 | 2009 |
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Growth and characterization of wurtzite GaAs nanowires with defect-free zinc blende GaAsSb inserts DL Dheeraj, G Patriarche, H Zhou, TB Hoang, AF Moses, S Grønsberg, ... Nano letters 8 (12), 4459-4463, 2008 | 150 | 2008 |
Inducing a direct-to-pseudodirect bandgap transition in wurtzite GaAs nanowires with uniaxial stress G Signorello, E Lörtscher, PA Khomyakov, S Karg, DL Dheeraj, ... Nature communications 5 (1), 3655, 2014 | 146 | 2014 |
A story told by a single nanowire: optical properties of wurtzite GaAs L Ahtapodov, J Todorovic, P Olk, T Mjåland, P Slåttnes, DL Dheeraj, ... Nano letters 12 (12), 6090-6095, 2012 | 130 | 2012 |
Vertically oriented growth of GaN nanorods on Si using graphene as an atomically thin buffer layer M Heilmann, AM Munshi, G Sarau, M Göbelt, C Tessarek, VT Fauske, ... Nano letters 16 (6), 3524-3532, 2016 | 88 | 2016 |
Advances in semiconductor nanowire growth on graphene A Mazid Munshi, H Weman physica status solidi (RRL)–Rapid Research Letters 7 (10), 713-726, 2013 | 75 | 2013 |
Rectifying single GaAsSb nanowire devices based on self-induced compositional gradients J Huh, H Yun, DC Kim, AM Munshi, DL Dheeraj, H Kauko, ... Nano Letters 15 (6), 3709-3715, 2015 | 74 | 2015 |
Crystal phase engineering in self-catalyzed GaAs and GaAs/GaAsSb nanowires grown on Si (111) AM Munshi, DL Dheeraj, J Todorovic, ATJ van Helvoort, H Weman, ... Journal of Crystal Growth 372, 163-169, 2013 | 73 | 2013 |
Zinc blende GaAsSb nanowires grown by molecular beam epitaxy DL Dheeraj, G Patriarche, L Largeau, HL Zhou, ATJ Van Helvoort, F Glas, ... Nanotechnology 19 (27), 275605, 2008 | 73 | 2008 |
Engineering parallel and perpendicular polarized photoluminescence from a single semiconductor nanowire by crystal phase control T Ba Hoang, AF Moses, L Ahtapodov, H Zhou, DL Dheeraj, ... Nano letters 10 (8), 2927-2933, 2010 | 72 | 2010 |
Single-mode near-infrared lasing in a GaAsSb-based nanowire superlattice at room temperature D Ren, L Ahtapodov, JS Nilsen, J Yang, A Gustafsson, J Huh, ... Nano letters 18 (4), 2304-2310, 2018 | 71 | 2018 |
New insights into the origins of Sb-induced effects on self-catalyzed GaAsSb nanowire arrays D Ren, DL Dheeraj, C Jin, JS Nilsen, J Huh, JF Reinertsen, AM Munshi, ... Nano letters 16 (2), 1201-1209, 2016 | 70 | 2016 |
Serpentine superlattice: concept and first results MS Miller, CE Pryor, H Weman, LA Samoska, H Kroemer, PM Petroff Journal of crystal growth 111 (1-4), 323-327, 1991 | 70 | 1991 |
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Controlling crystal phases in GaAs nanowires grown by Au-assisted molecular beam epitaxy DL Dheeraj, AM Munshi, M Scheffler, ATJ Van Helvoort, H Weman, ... Nanotechnology 24 (1), 015601, 2012 | 62 | 2012 |
Wurtzite GaAs/AlGaAs core–shell nanowires grown by molecular beam epitaxy HL Zhou, TB Hoang, DL Dheeraj, ATJ Van Helvoort, L Liu, JC Harmand, ... Nanotechnology 20 (41), 415701, 2009 | 60 | 2009 |