Atomic structure of conducting nanofilaments in TiO2 resistive switching memory DH Kwon, KM Kim, JH Jang, JM Jeon, MH Lee, GH Kim, XS Li, GS Park, ... Nature nanotechnology 5 (2), 148-153, 2010 | 2220 | 2010 |
Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook KM Kim, DS Jeong, CS Hwang Nanotechnology 22 (25), 254002, 2011 | 704 | 2011 |
Anode-interface localized filamentary mechanism in resistive switching of thin films KM Kim, BJ Choi, YC Shin, S Choi, CS Hwang Applied physics letters 91 (1), 012907, 2007 | 490 | 2007 |
Memristor applications for programmable analog ICs S Shin, K Kim, SM Kang IEEE Transactions on Nanotechnology 10 (2), 266-274, 2010 | 419 | 2010 |
High dielectric constant thin films on a Ru electrode grown at 250 °C by atomic-layer deposition SK Kim, WD Kim, KM Kim, CS Hwang, J Jeong Applied Physics Letters 85 (18), 4112-4114, 2004 | 384 | 2004 |
Silicon mitigates heavy metal stress by regulating P-type heavy metal ATPases, Oryza sativalow silicon genes, and endogenous phytohormones YH Kim, AL Khan, DH Kim, SY Lee, KM Kim, M Waqas, HY Jung, JH Shin, ... BMC Plant Biology 14 (1), 1-13, 2014 | 352 | 2014 |
Memristors for energy‐efficient new computing paradigms DS Jeong, KM Kim, S Kim, BJ Choi, CS Hwang Advanced Electronic Materials 2 (9), 1600090, 2016 | 292 | 2016 |
Compact models for memristors based on charge-flux constitutive relationships S Shin, K Kim, SM Kang IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2010 | 269 | 2010 |
Physical electro-thermal model of resistive switching in bi-layered resistance-change memory S Kim, SJ Kim, KM Kim, SR Lee, M Chang, E Cho, YB Kim, CJ Kim, ... Scientific reports 3 (1), 1680, 2013 | 266 | 2013 |
An artificial nociceptor based on a diffusive memristor JH Yoon, Z Wang, KM Kim, H Wu, V Ravichandran, Q Xia, CS Hwang, ... Nature communications 9 (1), 417, 2018 | 265 | 2018 |
Localized switching mechanism in resistive switching of atomic-layer-deposited thin films KM Kim, BJ Choi, CS Hwang Applied physics letters 90 (24), 242906, 2007 | 264 | 2007 |
Effects of neuromuscular electrical stimulation after anterior cruciate ligament reconstruction on quadriceps strength, function, and patient-oriented outcomes: a systematic review KM Kim, T Croy, J Hertel, S Saliba journal of orthopaedic & sports physical therapy 40 (7), 383-391, 2010 | 206 | 2010 |
A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure KM Kim, BJ Choi, MH Lee, GH Kim, SJ Song, JY Seok, JH Yoon, S Han, ... Nanotechnology 22 (25), 254010, 2011 | 205 | 2011 |
Plant secondary metabolite biosynthesis and transcriptional regulation in response to biotic and abiotic stress conditions R Jan, S Asaf, M Numan, KM Kim Agronomy 11 (5), 968, 2021 | 182 | 2021 |
The conical shape filament growth model in unipolar resistance switching of thin film KM Kim, CS Hwang Applied Physics Letters 94 (12), 122109, 2009 | 176 | 2009 |
Low-power, self-rectifying, and forming-free memristor with an asymmetric programing voltage for a high-density crossbar application KM Kim, J Zhang, C Graves, JJ Yang, BJ Choi, CS Hwang, Z Li, ... Nano letters 16 (11), 6724-6732, 2016 | 170 | 2016 |
Multi-level switching of triple-layered TaOx RRAM with excellent reliability for storage class memory SR Lee, YB Kim, M Chang, KM Kim, CB Lee, JH Hur, GS Park, D Lee, ... 2012 Symposium on VLSI Technology (VLSIT), 71-72, 2012 | 169 | 2012 |
Electrically configurable electroforming and bipolar resistive switching in Pt/TiO2/Pt structures KM Kim, GH Kim, SJ Song, JY Seok, MH Lee, JH Yoon, CS Hwang Nanotechnology 21 (30), 305203, 2010 | 169 | 2010 |
A Pt/TiO2/Ti Schottky-type selection diode for alleviating the sneak current in resistance switching memory arrays WY Park, GH Kim, JY Seok, KM Kim, SJ Song, MH Lee, CS Hwang Nanotechnology 21 (19), 195201, 2010 | 165 | 2010 |
Pt/Ta2O5/HfO2−x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash JH Yoon, KM Kim, SJ Song, JY Seok, KJ Yoon, DE Kwon, TH Park, ... Advanced Materials 27 (25), 3811-3816, 2015 | 158 | 2015 |