关注
Kazuaki Kunihiro
Kazuaki Kunihiro
在 ssc.pe.titech.ac.jp 的电子邮件经过验证
标题
引用次数
引用次数
年份
Experimental evaluation of impact ionization coefficients in GaN
K Kunihiro, K Kasahara, Y Takahashi, Y Ohno
IEEE Electron Device Letters 20 (12), 608-610, 1999
1961999
A 28-GHz CMOS phased-array transceiver based on LO phase-shifting architecture with gain invariant phase tuning for 5G new radio
J Pang, R Wu, Y Wang, M Dome, H Kato, H Huang, AT Narayanan, H Liu, ...
IEEE Journal of Solid-State Circuits 54 (5), 1228-1242, 2019
1822019
A 39-GHz 64-element phased-array transceiver with built-in phase and amplitude calibrations for large-array 5G NR in 65-nm CMOS
Y Wang, R Wu, J Pang, D You, AA Fadila, R Saengchan, X Fu, ...
IEEE Journal of Solid-State Circuits 55 (5), 1249-1269, 2020
1702020
A 28-GHz CMOS phased-array beamformer utilizing neutralized bi-directional technique supporting dual-polarized MIMO for 5G NR
J Pang, Z Li, R Kubozoe, X Luo, R Wu, Y Wang, D You, AA Fadila, ...
IEEE Journal of Solid-State Circuits 55 (9), 2371-2386, 2020
1662020
Semiconductor device
K Kasahara, Y Ohno, M Kuzuhara, H Miyamoto, Y Ando, T Nakayama, ...
US Patent 6,465,814, 2002
1342002
Semiconductor device with schottky electrode having high schottky barrier
T Nakayama, Y Ando, H Miyamoto, K Kunihiro, Y Takahashi, K Kasahara, ...
US Patent 6,492,669, 2002
1122002
Hetero-junction field effect transistor having an intermediate layer
Y Ando, H Miyamoto, N Iwata, K Matsunaga, M Kuzuhara, K Kasahara, ...
US Patent 6,552,373, 2003
1072003
Amplifying apparatus
K Kunihiro, K Takahashi
US Patent 7,696,818, 2010
952010
A large-signal equivalent circuit model for substrate-induced drain-lag phenomena in HJFETs
K Kunihiro, Y Ohno
IEEE Transactions on electron devices 43 (9), 1336-1342, 1996
821996
Power amplifier and power amplifying method
S Yamanouchi, K Kunihiro, K Shiikuma
US Patent 8,620,240, 2013
752013
A 30-MHz–2.4-GHz CMOS receiver with integrated RF filter and dynamic-range-scalable energy detector for cognitive radio systems
M Kitsunezuka, H Kodama, N Oshima, K Kunihiro, T Maeda, M Fukaishi
IEEE Journal of Solid-State Circuits 47 (5), 1084-1093, 2012
712012
Variable capacitor and a variable inductor
K Kunihiro
US Patent 6,556,416, 2003
602003
Compound semiconductor field effect transistor
Y Ohno, Y Takahashi, K Kunihiro
US Patent 6,373,082, 2002
582002
A CMOS dual-polarized phased-array beamformer utilizing cross-polarization leakage cancellation for 5G MIMO systems
J Pang, Z Li, X Luo, J Alvin, R Saengchan, AA Fadila, K Yanagisawa, ...
IEEE Journal of Solid-State Circuits 56 (4), 1310-1326, 2021
542021
A 0.7-3GHz envelope ΔΣ modulator using phase modulated carrier clock for multi-mode/band switching amplifiers
S Hori, K Kunihiro, K Takahashi, M Fukaishi
2011 IEEE Radio Frequency Integrated Circuits Symposium, 1-4, 2011
512011
Wireless D-band communication up to 60 Gbit/s with 64QAM using GaAs HEMT technology
I Ando, M Tanio, M Ito, T Kuwabara, T Marumoto, K Kunihiro
2016 IEEE Radio and Wireless Symposium (RWS), 193-195, 2016
432016
A diplexer-matching dual-band power amplifier LTCC module for IEEE 802.11 a/b/g wireless LANs
K Kunihiro, S Yamanouchi, T Miyazaki, Y Aoki, K Ikuina, T Ohtsuka, ...
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of …, 2004
422004
A 28GHz CMOS phased-array transceiver featuring gain invariance based on LO phase shifting architecture with 0.1-degree beam-steering resolution for 5G new radio
J Pang, R Wu, Y Wang, M Dome, H Kato, H Huang, AT Narayanan, H Liu, ...
2018 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 56-59, 2018
392018
A 39GHz 64-element phased-array CMOS transceiver with built-in calibration for large-array 5G NR
Y Wang, R Wu, J Pang, D You, AA Fadila, R Saengchan, X Fu, ...
2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 279-282, 2019
382019
Gate length scaling for Al/sub 0.2/Ga/sub 0.8/N/GaN HJFETs: two-dimensional full band Monte Carlo simulation including polarization effect
Y Ando, W Contrata, N Samoto, H Miyamoto, K Matsunaga, M Kuzuhara, ...
IEEE Transactions on Electron Devices 47 (10), 1965-1972, 2000
362000
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