| Innovative materials, devices, and CMOS technologies for low-power mobile multimedia T Skotnicki, C Fenouillet-Beranger, C Gallon, F Boeuf, S Monfray, F Payet, ... IEEE transactions on electron devices 55 (1), 96-130, 2007 | 271 | 2007 |
| Quantitative evaluation of statistical variability sources in a 45-nm technological node LP N-MOSFET A Cathignol, B Cheng, D Chanemougame, AR Brown, K Rochereau, ... IEEE Electron Device Letters 29 (6), 609-611, 2008 | 109 | 2008 |
| Fully-depleted SOI technology using high-k and single-metal gate for 32 nm node LSTP applications featuring 0.179 μm2 6T-SRAM bitcell C Fenouillet-Beranger, S Denorme, B Icard, F Boeuf, J Coignus, O Faynot, ... 2007 IEEE International Electron Devices Meeting, 267-270, 2007 | 83 | 2007 |
| Origin of the asymmetry in the magnitude of the statistical variability of n-and p-channel poly-Si gate bulk MOSFETs A Asenov, A Cathignol, B Cheng, KP McKenna, AR Brown, AL Shluger, ... IEEE Electron Device Letters 29 (8), 913-915, 2008 | 67 | 2008 |
| Characterization and modeling of transistor variability in advanced CMOS technologies CM Mezzomo, A Bajolet, A Cathignol, R Di Frenza, G Ghibaudo IEEE Transactions on Electron Devices 58 (8), 2235-2248, 2011 | 56 | 2011 |
| Abnormally high local electrical fluctuations in heavily pocket-implanted bulk long MOSFET A Cathignol, S Bordez, A Cros, K Rochereau, G Ghibaudo Solid-State Electronics 53 (2), 127-133, 2009 | 31 | 2009 |
| Comment on “Channel Length and Threshold Voltage Dependence of a Transistor Mismatch in a 32-nm HKMG Technology” TB Hook, JB Johnson, A Cathignol, A Cros, G Ghibaudo IEEE Transactions on Electron Devices 58 (4), 1255-1256, 2011 | 22 | 2011 |
| Modeling local electrical fluctuations in 45 nm heavily pocket-implanted bulk MOSFET CM Mezzomo, A Bajolet, A Cathignol, E Josse, G Ghibaudo Solid-state electronics 54 (11), 1359-1366, 2010 | 22 | 2010 |
| Spacing impact on MOSFET mismatch A Cathignol, S Mennillo, S Bordez, L Vendrame, G Ghibaudo 2008 IEEE International Conference on Microelectronic Test Structures, 90-95, 2008 | 14 | 2008 |
| Impact of a single grain boundary in the polycrystalline silicon gate on sub 100nm bulk MOSFET characteristics-Implication on matching properties A Cathignol, K Rochereau, G Ghibaudo ULIS conference, XX, 2006 | 14 | 2006 |
| Achievement of high image quality MCT sensors with Sofradir vertical industrial model L Rubaldo, P Guinedor, A Brunner, V Destefanis, P Fougères, A Kapferer, ... Infrared Technology and Applications XLIV 10624, 132-142, 2018 | 10 | 2018 |
| From CdZnTe bulk growth to HgCdTe infra-red detectors: mastering the chain for high-performance and reliable imaging A Cathignol, D Brellier, E Gout, P Fougères, MC Manzato, ... Infrared Technology and Applications XLIV 10624, 78-88, 2018 | 10 | 2018 |
| High threshold voltage matching performance on gate-all-around MOSFET A Cathignol, A Cros, S Harrison, R Cerrutti, P Coronel, A Pouydebasque, ... Solid-state electronics 51 (11-12), 1450-1457, 2007 | 10 | 2007 |
| RMS noise modeling and detection for high-reliability HgCdTe infrared focal plane arrays development A Cathignol, G Vauquelin, A Brunner, V Destefanis, L Rubaldo, M Maillard, ... Infrared Technology and Applications XLI 9451, 583-593, 2015 | 9 | 2015 |
| Drain current variability in 45nm heavily pocket-implanted bulk MOSFET CM Mezzomo, A Bajolet, A Cathignol, G Ghibaudo 2010 Proceedings of the European Solid State Device Research Conference, 122-125, 2010 | 9 | 2010 |
| From MOSFET matching test structures to matching data utilization: Not an ordinary task A Cathignol, S Bordez, K Rochereau, G Ghibaudo 2007 IEEE International Conference on Microelectronic Test Structures, 230-233, 2007 | 8 | 2007 |
| Improved methodology for better accuracy on transistors matching characterization A Cathignol, K Rochereau, S Bordez, G Ghibaudo 2006 IEEE International Conference on Microelectronic Test Structures, 173-178, 2006 | 8 | 2006 |
| Drain-current variability in 45 nm bulk N-MOSFET with and without pocket-implants CM Mezzomo, A Bajolet, A Cathignol, G Ghibaudo Solid-state electronics 65, 163-169, 2011 | 7 | 2011 |
| A continuous model for MOSFET Vt matching considering additional length effects S Bordez, A Cathignol, K Rochereau 2007 IEEE International Conference on Microelectronic Test Structures, 226-229, 2007 | 6 | 2007 |
| Caractérisation et modélisation des fluctuations locales des paramètres électriques du transistor des filières CMOS sub-65 nm A Cathignol Th: Phys.: INPG, 2008 | 4 | 2008 |
