| A 90-nm logic technology featuring strained-silicon SE Thompson, M Armstrong, C Auth, M Alavi, M Buehler, R Chau, S Cea, ... IEEE Transactions on electron devices 51 (11), 1790-1797, 2004 | 920 | 2004 |
| A 90 nm logic technology featuring 50 nm strained silicon channel transistors, 7 layers of Cu interconnects, low k ILD, and 1/spl mu/m/sup 2/SRAM cell S Thompson, N Anand, M Armstrong, C Auth, B Arcot, M Alavi, P Bai, ... Digest. International Electron Devices Meeting,, 61-64, 2002 | 453 | 2002 |
| A 22nm SoC platform technology featuring 3-D tri-gate and high-k/metal gate, optimized for ultra low power, high performance and high density SoC applications CH Jan, U Bhattacharya, R Brain, SJ Choi, G Curello, G Gupta, W Hafez, ... 2012 International Electron Devices Meeting, 3.1. 1-3.1. 4, 2012 | 370 | 2012 |
| A 32nm SoC platform technology with 2nd generation high-k/metal gate transistors optimized for ultra low power, high performance, and high density product … CH Jan, M Agostinelli, M Buehler, ZP Chen, SJ Choi, G Curello, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 350 | 2009 |
| Device structure and method for reducing silicide encroachment RS Chau, E Andideh, MC Taylor, CH Jan, J Tsai US Patent 6,765,273, 2004 | 234 | 2004 |
| Method of forming a transistor RS Chau, CH Jan, P Packan, MC Taylor US Patent 5,908,313, 1999 | 216 | 1999 |
| Semiconductor device having deposited silicon regions and a method of fabrication A Murthy, CH Jan, E Andideh, K Weldon US Patent 6,235,568, 2001 | 212 | 2001 |
| Transistor with low resistance tip and method of fabrication in a CMOS process RS Chau, CH Jan, CH Chern, LD Yau US Patent 6,165,826, 2000 | 200 | 2000 |
| Memory cell using BTI effects in high-k metal gate MOS WM Hafez, A Rahman, CH Jan US Patent 8,432,751, 2013 | 162 | 2013 |
| Device having thin first spacers and partially recessed thick second spacers for improved salicide resistance on polysilicon gates CH Jan, JA Tsai, S Yang, T Ghani, KA Whitehill, SJ Keating, A Myers US Patent 6,509,618, 2003 | 147 | 2003 |
| Device having spacers for improved salicide resistance on polysilicon gates CH Jan, JA Tsai, S Yang, T Ghani, KA Whitehill, SJ Keating, A Myers US Patent 6,521,964, 2003 | 146 | 2003 |
| Method of recessing spacers to improved salicide resistance on polysilicon gates CH Jan, JA Tsai, S Yang, T Ghani, KA Whitehill, SJ Keating, A Myers US Patent 6,506,652, 2003 | 145 | 2003 |
| Transistor with ultra shallow tip and method of fabrication RS Chau, CH Chern, CH Jan, KR Weldon, PA Packan, LD Yau US Patent 5,710,450, 1998 | 144 | 1998 |
| A 1.1 GHz 12 A/Mb-Leakage SRAM Design in 65 nm Ultra-Low-Power CMOS Technology With Integrated Leakage Reduction for Mobile Applications Y Wang, HJ Ahn, U Bhattacharya, Z Chen, T Coan, F Hamzaoglu, ... IEEE Journal of Solid-State Circuits 43 (1), 172-179, 2008 | 140 | 2008 |
| Self-heat reliability considerations on Intel's 22nm Tri-Gate technology C Prasad, L Jiang, D Singh, M Agostinelli, C Auth, P Bai, T Eiles, J Hicks, ... 2013 IEEE International Reliability Physics Symposium (IRPS), 5D. 1.1-5D. 1.5, 2013 | 120 | 2013 |
| RF CMOS technology scaling in high-k/metal gate era for RF SoC (system-on-chip) applications CH Jan, M Agostinelli, H Deshpande, MA El-Tanani, W Hafez, U Jalan, ... 2010 international electron devices meeting, 27.2. 1-27.2. 4, 2010 | 116 | 2010 |
| Method of fabricating a field effect transistor structure with abrupt source/drain junctions AS Murthy, RS Chau, P Morrow, CH Jan, P Packan US Patent 6,887,762, 2005 | 115 | 2005 |
| A high performance 180 nm generation logic technology S Yang, S Ahmed, B Arcot, R Arghavani, P Bai, S Chambers, P Charvat, ... International Electron Devices Meeting 1998. Technical Digest (Cat. No …, 1998 | 111 | 1998 |
| A high performance 0.25/spl mu/m logic technology optimized for 1.8 V operation M Bohr, SS Ahmed, SU Ahmed, M Bost, T Ghani, J Greason, R Hainsey, ... International Electron Devices Meeting. Technical Digest, 847-850, 1996 | 108 | 1996 |
| A 14 nm SoC platform technology featuring 2nd generation Tri-Gate transistors, 70 nm gate pitch, 52 nm metal pitch, and 0.0499 um2 SRAM cells, optimized for … CH Jan, F Al-Amoody, HY Chang, T Chang, YW Chen, N Dias, W Hafez, ... 2015 Symposium on VLSI Technology (VLSI Technology), T12-T13, 2015 | 103 | 2015 |
