Alban Morelle 个人学术档案

2022202320243 1 3

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Denis FlandreICTEAM, EPL, Université catholique de Louvain (UCL)在 uclouvain.be 的电子邮件经过验证
Jean-Pierre RaskinUniversité catholique de Louvain, Engineering School of Louvain在 uclouvain.be 的电子邮件经过验证
Edoardo CharbonProfessor of Advanced Quantum Architectures, EPFL在 epfl.ch 的电子邮件经过验证
Pouyan KeshavarzianPi Imaging Technology在 piimaging.com 的电子邮件经过验证
Francesco GramugliaSnr Engineer, Globalfoundries在 globalfoundries.com 的电子邮件经过验证
Claudio BruschiniScientist, Ecole Polytechique Fédérale de Lausanne (EPFL)在 epfl.ch 的电子邮件经过验证

Alban Morelle

Nanophysics group, ETHZ

在 phys.ethz.ch 的电子邮件经过验证


标题按引用次数排序按年份排序按标题排序	引用次数引用次数	年份
Improved split CV mobility extraction in 28 nm fully depleted silicon on insulator transistors A Morelle, E Vandermolen, V Kilchytska, JP Raskin, D Flandre IEEE Electron Device Letters 42 (5), 661-664, 2021	5	2021
Control of Ge island coalescence for the formation of nanowires on silicon SP Ramanandan, JR Sapera, A Morelle, S Martí-Sánchez, A Rudra, ... Nanoscale Horizons 9 (4), 555-565, 2024	2	2024
Data set for control of Ge island coalescence for the formation of nanowires on silicon. SP Ramanandan, J René Sapera, A Morelle, S Marti-Sanchez, A Rudra, ... EPFL Infoscience, 2024		2024
Deep cryogenic operation of 55 nm CMOS SPADs for quantum information and metrology applications A Morelle, F Gramuglia, P Keshavarzian, C Bruschini, D Chong, J Tan, ... Quantum Information and Measurement, M2B. 7, 2021		2021
Assessment of the split CV mobility extraction method in 28nm FDSOI transistors A Morelle, D Flandre, JP Raskin

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