| “Leaky Dielectric” Model for the Suppression of Dynamic in Carbon-Doped AlGaN/GaN HEMTs MJ Uren, S Karboyan, I Chatterjee, A Pooth, P Moens, A Banerjee, ... IEEE Transactions on Electron Devices 64 (7), 2826-2834, 2017 | 231 | 2017 |
| Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal–polar GaN/AlInGaN interfaces B Reuters, H Hahn, A Pooth, B Holländer, U Breuer, M Heuken, H Kalisch, ... Journal of Physics D: Applied Physics 47 (17), 175103, 2014 | 88 | 2014 |
| P-channel enhancement and depletion mode GaN-based HFETs with quaternary backbarriers H Hahn, B Reuters, A Pooth, B Holländer, M Heuken, H Kalisch, A Vescan IEEE transactions on electron devices 60 (10), 3005-3011, 2013 | 80 | 2013 |
| Lateral charge transport in the carbon-doped buffer in AlGaN/GaN-on-Si HEMTs I Chatterjee, MJ Uren, S Karboyan, A Pooth, P Moens, A Banerjee, ... IEEE Transactions on Electron Devices 64 (3), 977-983, 2017 | 45 | 2017 |
| Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias A Pooth, MJ Uren, M Cäsar, T Martin, M Kuball Journal of Applied Physics 118 (21), 2015 | 35 | 2015 |
| Morphological and electrical comparison of Ti and Ta based ohmic contacts for AlGaN/GaN-on-SiC HFETs A Pooth, J Bergsten, N Rorsman, H Hirshy, R Perks, P Tasker, T Martin, ... Microelectronics Reliability 68, 2-4, 2017 | 18 | 2017 |
| First small-signal data of GaN-based p-channel heterostructure field effect transistors H Hahn, B Reuters, A Pooth, A Noculak, H Kalisch, A Vescan Japanese Journal of Applied Physics 52 (12R), 128001, 2013 | 16 | 2013 |
| Characterization of GaN-based p-channel device structures at elevated temperatures H Hahn, B Reuters, A Pooth, H Kalisch, A Vescan Semiconductor Science and Technology 29 (7), 075002, 2014 | 14 | 2014 |
| Impact of buffer charge on the reliability of carbon doped AlGaN/GaN-on-Si HEMTs I Chatterjee, MJ Uren, A Pooth, S Karboyan, S Martin-Horcajo, M Kuball, ... 2016 IEEE International Reliability Physics Symposium (IRPS), 4A-4-1-4A-4-5, 2016 | 7 | 2016 |
| Floating body effects in carbon doped GaN HEMTs M Kuball, MJ Uren, A Pooth, S Karboyan, WM Waller, I Chatterjee 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2015 | 6 | 2015 |
| The development of a European industrial source of GaN epitaxy for RF applications at IQE Europe T Martin, PJ Wright, R Blunt, A Pooth, C Liu, A Gott, L Lees 2014 9th European Microwave Integrated Circuit Conference, 218-220, 2014 | 1 | 2014 |
| Investigation of buffer charging effects in GaN-based transistors A Pooth University of Bristol, 2018 | | 2018 |
| Back Bias Ramping and Photoionization Spectroscopy Analysis of GaN-on-Si HFETs A Pooth, T Martin, MJ Uren, M Kuball 31st Annual International Conference on Compound Semiconductor Manufacturing …, 2016 | | 2016 |
