| Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetry B Gil, O Briot, RL Aulombard Physical Review B 52 (24), R17028, 1995 | 413 | 1995 |
| Raman determination of phonon deformation potentials in α-GaN F Demangeot, J Frandon, MA Renucci, O Briot, B Gil, RL Aulombard Solid state communications 100 (4), 207-210, 1996 | 240 | 1996 |
| Optical properties of GaN epilayers on sapphire M Tchounkeu, O Briot, B Gil, JP Alexis, RL Aulombard Journal of applied physics 80 (9), 5352-5360, 1996 | 156 | 1996 |
| Gallium vacancies and the growth stoichiometry of GaN studied by positron annihilation spectroscopy K Saarinen, P Seppälä, J Oila, P Hautojärvi, C Corbel, O Briot, ... Applied physics letters 73 (22), 3253-3255, 1998 | 134 | 1998 |
| Selectively excited photoluminescence from Eu-implanted GaN K Wang, RW Martin, KP ODonnell, V Katchkanov, E Nogales, K Lorenz, ... Applied Physics Letters 87 (11), 112107-112107-3, 2005 | 113 | 2005 |
| Transmission electron microscopy structural characterisation of GaN layers grown on (0001) sapphire JL Rouviere, M Arlery, B Daudin, G Feuillet, O Briot Materials Science and Engineering: B 50 (1), 61-71, 1997 | 110 | 1997 |
| Thermal stability of GaN investigated by Raman scattering M Kuball, F Demangeot, J Frandon, MA Renucci, N Grandjean, O Briot Mrs Internet Journal of Nitride Semiconductor Research 4 (EPFL-ARTICLE …, 1999 | 103 | 1999 |
| Internal structure and oscillator strengths of excitons in strained α-GaN B Gil, O Briot Physical Review B 55 (4), 2530, 1997 | 102 | 1997 |
| MOVPE growth of InN films and quantum dots B Maleyre, O Briot, S Ruffenach Journal of crystal growth 269 (1), 15-21, 2004 | 101 | 2004 |
| Indium nitride quantum dots grown by metalorganic vapor phase epitaxy O Briot, B Maleyre, S Ruffenach Applied physics letters 83 (14), 2919-2921, 2003 | 99 | 2003 |
| Thermal stability of GaN investigated by Raman scattering M Kuball, F Demangeot, J Frandon, MA Renucci, J Massies, N Grandjean, ... Applied physics letters 73 (7), 960-962, 1998 | 99 | 1998 |
| Reflectivity and photoluminescence measurements in ZnS epilayers grown by metal-organic chemical-vapor deposition A Abounadi, M Di Blasio, D Bouchara, J Calas, M Averous, O Briot, N Briot, ... physical review B 50 (16), 11677, 1994 | 94 | 1994 |
| Coupling of GaN-and AlN-like longitudinal optic phonons in Ga 1-x Al x N solid solutions F Demangeot, J Groenen, J Frandon, MA Renucci, O Briot, S Clur, ... Applied physics letters 72 (21), 2674-2676, 1998 | 92 | 1998 |
| High-temperature annealing and optical activation of Eu-implanted GaN K Lorenz, U Wahl, E Alves, S Dalmasso, RW Martin, KP O'Donnell, ... Applied physics letters 85 (14), 2712-2714, 2004 | 88 | 2004 |
| Interplay of electrons and phonons in heavily doped GaN epilayers F Demangeot, J Frandon, MA Renucci, C Meny, O Briot, RL Aulombard Journal of applied physics 82 (3), 1305-1309, 1997 | 84 | 1997 |
| Optical, structural investigations and band-gap bowing parameter of GaInN alloys M Moret, B Gil, S Ruffenach, O Briot, C Giesen, M Heuken, S Rushworth, ... Journal of Crystal Growth 311 (10), 2795-2797, 2009 | 82 | 2009 |
| Optimization of the MOVPE growth of GaN on sapphire O Briot, JP Alexis, M Tchounkeu, RL Aulombard Materials Science and Engineering: B 43 (1), 147-153, 1997 | 79 | 1997 |
| Growth of InN quantum dots by MOVPE S Ruffenach, B Maleyre, O Briot, B Gil physica status solidi (c) 2 (2), 826-832, 2005 | 76 | 2005 |
| Properties of a photovoltaic detector based on an n-type GaN Schottky barrier F Binet, JY Duboz, N Laurent, E Rosencher, O Briot, RL Aulombard Journal of applied physics 81 (9), 6449-6454, 1997 | 75 | 1997 |
| Transmission electron microscopy characterization of GaN layers grown by MOCVD on sapphire JL Rouviere, M Arlery, R Niebuhr, KH Bachem, O Briot Materials Science and Engineering: B 43 (1), 161-166, 1997 | 75 | 1997 |
