| Reproducible hysteresis and resistive switching in metal-CuxO-metal heterostructures R Dong, DS Lee, WF Xiang, SJ Oh, DJ Seong, SH Heo, HJ Choi, ... Applied physics letters 90 (4), 2007 | 235 | 2007 |
| Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications D Lee, H Choi, H Sim, D Choi, H Hwang, MJ Lee, SA Seo, IK Yoo IEEE electron device letters 26 (10), 719-721, 2005 | 229 | 2005 |
| Flexible and twistable non-volatile memory cell array with all-organic one diode–one resistor architecture Y Ji, DF Zeigler, DS Lee, H Choi, AKY Jen, HC Ko, TW Kim Nature communications 4 (1), 2707, 2013 | 190 | 2013 |
| An electrically modifiable synapse array of resistive switching memory H Choi, H Jung, J Lee, J Yoon, J Park, D Seong, W Lee, M Hasan, ... Nanotechnology 20 (34), 345201, 2009 | 175 | 2009 |
| Uniform resistive switching with a thin reactive metal interface layer in metal-La0. 7Ca0. 3MnO3-metal heterostructures M Hasan, R Dong, HJ Choi, DS Lee, DJ Seong, MB Pyun, H Hwang Applied Physics Letters 92 (20), 2008 | 135 | 2008 |
| One Transistor–One Resistor Devices for Polymer Non‐Volatile Memory Applications TW Kim, H Choi, SH Oh, G Wang, DY Kim, H Hwang, T Lee Advanced Materials 21 (24), 2497-2500, 2009 | 115 | 2009 |
| Excellent Switching Uniformity of Cu-Doped Bilayer for Nonvolatile Memory Applications J Yoon, H Choi, D Lee, JB Park, J Lee, DJ Seong, Y Ju, M Chang, S Jung, ... IEEE electron device letters 30 (5), 457-459, 2009 | 106 | 2009 |
| Excellent resistance switching characteristics of Pt/SrTiO/sub 3/schottky junction for multi-bit nonvolatile memory application H Sim, H Choi, D Lee, M Chang, D Choi, Y Son, EH Lee, W Kim, Y Park, ... IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005 | 91 | 2005 |
| Improvement of reproducible hysteresis and resistive switching in metal-La0. 7Ca0. 3MnO3-metal heterostructures by oxygen annealing R Dong, WF Xiang, DS Lee, SJ Oh, DJ Seong, SH Heo, HJ Choi, ... Applied physics letters 90 (18), 2007 | 81 | 2007 |
| Resistive-Switching Characteristics of for Nonvolatile Memory Applications DJ Seong, M Hassan, H Choi, J Lee, J Yoon, JB Park, W Lee, MS Oh, ... IEEE electron device letters 30 (9), 919-921, 2009 | 80 | 2009 |
| Reversible switching characteristics of polyfluorene-derivative single layer film for nonvolatile memory devices TW Kim, SH Oh, H Choi, G Wang, H Hwang, DY Kim, T Lee Applied Physics Letters 92 (25), 2008 | 78 | 2008 |
| Resistive switching characteristics of polymer non-volatile memory devices in a scalable via-hole structure TW Kim, H Choi, SH Oh, M Jo, G Wang, B Cho, DY Kim, H Hwang, T Lee Nanotechnology 20 (2), 025201, 2008 | 67 | 2008 |
| High-performance, cost-effective 2z nm two-deck cross-point memory integrated by self-align scheme for 128 Gb SCM T Kim, H Choi, M Kim, J Yi, D Kim, S Cho, H Lee, C Hwang, ER Hwang, ... 2018 IEEE International Electron Devices Meeting (IEDM), 37.1. 1-37.1. 4, 2018 | 61 | 2018 |
| Effect of oxygen migration and interface engineering on resistance switching behavior of reactive metal/polycrystalline Pr0.7Ca0.3MnO3 device for nonvolatile … D Seong, J Park, N Lee, M Hasan, S Jung, H Choi, J Lee, M Jo, W Lee, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 51 | 2009 |
| Mechanism of current hysteresis in reduced rutile TiO2 crystals for resistive memory R Dong, DS Lee, MB Pyun, M Hasan, HJ Choi, MS Jo, DJ Seong, ... Applied Physics A 93, 409-414, 2008 | 51 | 2008 |
| Nanoscale resistive switching of a copper–carbon-mixed layer for nonvolatile memory applications H Choi, M Pyun, TW Kim, M Hasan, R Dong, J Lee, JB Park, J Yoon, ... IEEE electron device letters 30 (3), 302-304, 2009 | 40 | 2009 |
| Electrical and reliability characteristics of copper-doped carbon (CuC) based resistive switching devices for nonvolatile memory applications M Pyun, H Choi, JB Park, D Lee, M Hasan, R Dong, SJ Jung, J Lee, ... Applied Physics Letters 93 (21), 2008 | 36 | 2008 |
| A materials approach to resistive switching memory oxides M Hasan, R Dong, DS Lee, DJ Seong, HJ Choi, MB Pyun, H Hwang JSTS: Journal of Semiconductor Technology and Science 8 (1), 66-79, 2008 | 31 | 2008 |
| Improved Memory Characteristics of Ge Nanocrystals Using a LaAlO3 Buffer Layer H Choi, M Chang, M Jo, SJ Jung, H Hwang Electrochemical and solid-State Letters 11 (6), H154, 2008 | 28 | 2008 |
| Effect of metal ions on the switching performance of polyfluorene-based organic non-volatile memory devices TW Kim, SH Oh, J Lee, H Choi, G Wang, J Park, DY Kim, H Hwang, T Lee Organic Electronics 11 (1), 109-114, 2010 | 26 | 2010 |
Hyunsang HwangPOSTECH, Korea在 postech.ac.kr 的电子邮件经过验证
Hyunsang HwangPOSTECH, Korea在 postech.ac.kr 的电子邮件经过验证
Sanghyun BanPostech / SK hynix在 postech.ac.kr 的电子邮件经过验证
Seokman HongKorea Advanced Institute of Science and Technology (KAIST)在 kaist.ac.kr 的电子邮件经过验证