| Correlation between dislocations and leakage current of pn diodes on a free-standing GaN substrate S Usami, Y Ando, A Tanaka, K Nagamatsu, M Deki, M Kushimoto, S Nitta, ... Applied Physics Letters 112 (18), 182106, 2018 | 186 | 2018 |
| Pulsed laser deposition method-CeO2 buffer layer for YBCO coated conductor T Muroga, H Iwai, Y Yamada, T Izumi, Y Shiohara, Y Iijima, T Saito, T Kato, ... Physica C: Superconductivity 392, 796-800, 2003 | 67 | 2003 |
| Molten KOH etching with Na2O2 additive for dislocation revelation in 4H-SiC epilayers and substrates YZ Yao, Y Ishikawa, Y Sugawara, H Saitoh, K Danno, H Suzuki, Y Kawai, ... Japanese journal of applied physics 50 (7R), 075502, 2011 | 57 | 2011 |
| Critical currents of YBa2Cu3Oy thick films prepared by liquid phase epitaxial growth M Yoshida, T Nakamoto, T Kitamura, OB Hyun, I Hirabayashi, S Tanaka, ... Applied physics letters 65 (13), 1714-1716, 1994 | 51 | 1994 |
| Transmission electron microscopy analysis of a threading dislocation with c+ a Burgers vector in 4H-SiC Y Sugawara, M Nakamori, YZ Yao, Y Ishikawa, K Danno, H Suzuki, ... Applied physics express 5 (8), 081301, 2012 | 47 | 2012 |
| X-ray diffraction and Raman characterization of β-Ga2O3 single crystal grown by edge-defined film-fed growth method Y Yao, Y Ishikawa, Y Sugawara Journal of Applied Physics 126 (20), 205106, 2019 | 44 | 2019 |
| Revelation of dislocations in HVPE GaN single crystal by KOH etching with Na2O2 additive and cathodoluminescence mapping Y Yao, Y Ishikawa, Y Sugawara, D Yokoe, M Sudo, N Okada, K Tadatomo Superlattices and Microstructures 99, 83-87, 2016 | 37 | 2016 |
| Microscopic characterization of the C–F bonds in fluorine–graphite intercalation compounds K Yoshida, Y Sugawara, M Saitoh, K Matsumoto, R Hagiwara, Y Matsuo, ... Journal of Power Sources 445, 227320, 2020 | 35 | 2020 |
| Observation of threading dislocations in ammonothermal gallium nitride single crystal using synchrotron X-ray topography Y Yao, Y Ishikawa, Y Sugawara, Y Takahashi, K Hirano Journal of Electronic Materials 47 (9), 5007-5012, 2018 | 34 | 2018 |
| Rapid fabrication of highly textured CeO2 cap layer on IBAD tape for YBCO coated conductor T Muroga, T Watanabe, S Miyata, H Iwai, Y Yamada, T Izumi, Y Shiohara, ... Physica C: Superconductivity 412, 807-812, 2004 | 33 | 2004 |
| Identification of Burgers vectors of dislocations in monoclinic β-Ga2O3 via synchrotron x-ray topography Y Yao, Y Sugawara, Y Ishikawa Journal of Applied Physics 127 (20), 205110, 2020 | 32 | 2020 |
| Expansion of a single Shockley stacking fault in a 4H-SiC (110) epitaxial layer caused by electron beam irradiation Y Ishikawa, M Sudo, YZ Yao, Y Sugawara, M Kato Journal of Applied Physics 123 (22), 225101, 2018 | 31 | 2018 |
| Direct Observation of the Double Schottky Barrier in Niobium‐Doped Barium Titanate by the Charge‐Collection Current Method N Kataoka, K Hayashi, T Yamamoto, Y Sugawara, Y Ikuhara, T Sakuma Journal of the American Ceramic Society 81 (7), 1961-1963, 1998 | 30 | 1998 |
| Revelation of Dislocations in β‐Ga2O3 Substrates Grown by Edge‐Defined Film‐Fed Growth Y Yao, Y Ishikawa, Y Sugawara physica status solidi (a) 217 (3), 1900630, 2020 | 28 | 2020 |
| Comparison of slicing-induced damage in hexagonal SiC by wire sawing with loose abrasive, wire sawing with fixed abrasive, and electric discharge machining Y Ishikawa, YZ Yao, Y Sugawara, K Sato, Y Okamoto, N Hayashi, B Dierre, ... Japanese Journal of Applied Physics 53 (7), 071301, 2014 | 28 | 2014 |
| Observation of dislocations in β-Ga2O3 single-crystal substrates by synchrotron X-ray topography, chemical etching, and transmission electron microscopy Y Yao, Y Sugawara, Y Ishikawa Japanese Journal of Applied Physics 59 (4), 045502, 2020 | 27 | 2020 |
| Characterization of threading dislocations in GaN (0001) substrates by photoluminescence imaging, cathodoluminescence mapping and etch pits Y Yao, Y Ishikawa, M Sudo, Y Sugawara, D Yokoe Journal of Crystal Growth 468, 484-488, 2017 | 25 | 2017 |
| Field-induced pinning centers of YBa2Cu3O7− y superconducting thick film prepared by liquid phase epitaxy T Kitamura, S Taniguchi, Y Sugawara, Y Ikuhara, Y Shiohara, ... Physica C: Superconductivity 256 (1-2), 64-72, 1996 | 23 | 1996 |
| Slip planes in monoclinic β-Ga2O3 revealed from its {010} face via synchrotron X-ray diffraction and X-ray topography Y Yao, Y Ishikawa, Y Sugawara Japanese Journal of Applied Physics 59 (12), 125501, 2020 | 22 | 2020 |
| Correlation between etch pits formed by molten KOH+ Na2O2 etching and dislocation types in heavily doped n+-4H–SiC studied by X-ray topography Y Yao, Y Ishikawa, Y Sugawara, K Sato, K Danno, H Suzuki, T Bessho, ... Journal of crystal growth 364, 7-10, 2013 | 22 | 2013 |
