Isostructural metal-insulator transition in VO2 D Lee, B Chung, Y Shi, GY Kim, N Campbell, F Xue, K Song, SY Choi, ... Science 362 (6418), 1037-1040, 2018 | 209 | 2018 |
Lightwave-driven gapless superconductivity and forbidden quantum beats by terahertz symmetry breaking X Yang, C Vaswani, C Sundahl, L Mootz, Luo, JH Kang, IE Perakis, ... Nature Photonics 13, 707-713, 2019 | 118 | 2019 |
Robotic four-dimensional pixel assembly of van der Waals solids AJ Mannix, A Ye, SH Sung, A Ray, F Mujid, C Park, M Lee, JH Kang, ... Nature Nanotechnology 17, 361–366, 2022 | 95 | 2022 |
Terahertz-light quantum tuning of a metastable emergent phase hidden by superconductivity X Yang, C Vaswani, C Sundahl, M Mootz, P Gagel, L Luo, JH Kang, ... Nature Materials 17, 586-591, 2018 | 92 | 2018 |
Terahertz second-harmonic generation from lightwave acceleration of symmetry-breaking nonlinear supercurrents C Vaswani, M Mootz, C Sundahl, DH Mudiyanselage, JH Kang, X Yang, ... Physical Review Letters 124 (20), 207003, 2020 | 86 | 2020 |
Light quantum control of persisting Higgs modes in iron-based superconductors (*equal contribution) C Vaswani*, JH Kang*, M Mootz*, L Luo, X Yang, C Sundahl, D Cheng, ... Nature Communications 12 (1), 1-9, 2021 | 61* | 2021 |
Quantum coherence tomography of light-controlled superconductivity (*equal contribution) L Luo*, M Mootz*, JH Kang*, C Huang, K Eom, JW Lee, C Vaswani, ... Nature Physics 19, 201-209, 2023 | 41 | 2023 |
Ultrafast nonthermal terahertz electrodynamics and possible quantum energy transfer in a Nb3Sn superconductor X Yang, X Zhao, C Vaswani, C Sundahl, B Song, Y Yao, D Cheng, Z Liu, ... Phys. Rev. B 99, 094504, 2019 | 40 | 2019 |
Side emitting lens, light emitting device using the side emitting lens, mold assembly for preparing the side emitting lens and method for preparing the side emitting lens D Ha, B Shin, M Choi, JH Kang, M Yu, J Lee US Patent App. 11/505,829, 2007 | 38 | 2007 |
Resist-Free Lithography for Monolayer Transition Metal Dichalcogenides PK Poddar, Y Zhong, AJ Mannix, F Mujid, J Yu, C Liang, JH Kang, M Lee, ... Nano Letters 22 (2), 726–732, 2022 | 34 | 2022 |
Origin of the emergence of higher Tc than bulk in iron chalcogenide thin films S Seo, JH Kang, MJ Oh, CB Eom, S Lee Scientific Reports 7, 9994, 2017 | 33 | 2017 |
Thin gallium nitride light emitting diode device J Lee, B Shin, M Choi, JH Kang, M Yu, B Oh US Patent App. 11/298,505, 2006 | 28 | 2006 |
Light emitting diode device having advanced light extraction efficiency and preparation method thereof B Shin, MH Choi, D Ha, M Yu, JH Kang, J Lee, H Shin US Patent App. 11/488,183, 2007 | 27 | 2007 |
Method for fabricating semiconductor device TG Kim, JH Kang, E Jo, G Choi, H Choi US Patent App. 14/294,287, 2014 | 26 | 2014 |
Superconductivity in undoped BaFe2As2 by tetrahedral geometry design JH Kang, JW Kim, PJ Ryan, L Xie, L Guo, C Sundahl, J Schad, ... Proc. Natl. Acad. Sci. U.S.A. 117 (35), 21170-21174, 2020 | 23 | 2020 |
Control of epitaxial BaFe2As2 atomic configurations with substrate surface terminations JH Kang, L Xie, Y Wang, H Lee, N Campbell, J Jiang, PJ Ryan, ... Nano Letters 18 (10), 6347-6352, 2018 | 22 | 2018 |
Wafer-scale integration of transition metal dichalcogenide field-effect transistors using adhesion lithography VL Nguyen, M Seol, J Kwon, EK Lee, WJ Jang, HW Kim, C Liang, ... Nature Electronics 6 (2), 146-153, 2023 | 21 | 2023 |
Ultrafast martensitic phase transition driven by intense terahertz pulses BQ Song, X Yang, C Sundahl, JH Kang, M Mootz, Y Yao, IE Perakis, ... Ultrafast Science 3, 0007, 2023 | 16 | 2023 |
Method for manufacturing GaN-based light emitting diode using laser lift-off technique and light emitting diode manufactured thereby J Lee, B Shin, M Choi, JH Kang, M Yu, B Oh US Patent App. 11/175,182, 2006 | 16 | 2006 |
Recessed channel array transistors, and semiconductor devices including a recessed channel array transistor J Ryu, D Kim, S Jeong, S Choi, Y Shin, T Park, J Yoo, JH Kang US Patent 9,190,495, 2015 | 14 | 2015 |